Inventor · disambiguated record
Ya-Chen Kao
Also filed as: KAO YA-CHEN
46 granted patents·1 pending application·196 citations·filing 2002–2023
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD24TAIWAN SEMICONDUCTOR MFG9AU OPTRONICS CORP2AUO CORP2CHIANG TIEN-WEI2
Top patents by PatentIndex Score
47 records- 0196US9659953B2HKMG high voltage CMOS for embedded non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·18 cites·20 claims
- 0292US8878318B2Structure and method for a MRAM device with an oxygen absorbing cap layerCHEN CHIH-MING·Filed 2011·Granted Nov 4, 2014·16 cites·20 claims
- 0390US9276010B2Dual silicide formation method to embed split gate flash memory in high-k metal gate (HKMG) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 1, 2016·12 cites·20 claims
- 0489US7683447B2MRAM device with continuous MTJ tunnel layersTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 23, 2010·22 cites·9 claims
- 0586US10276588B2HKMG high voltage CMOS for embedded non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·3 cites·20 claims
- 0686US9627392B2Method to improve floating gate uniformity for non-volatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·4 cites·20 claims
- 0786US8760255B2Contactless communications using ferromagnetic materialYANG PING-LIN·Filed 2011·Granted Jun 24, 2014·8 cites·21 claims
- 0886US7667261B2Split-gate memory cells and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 23, 2010·9 cites·18 claims
- 0985US8416600B2Reverse connection MTJ cell for STT MRAMLIN CHUN-JUNG·Filed 2009·Granted Apr 9, 2013·21 cites·20 claims
- 1085US6649489B1Poly etching solution to improve silicon trench for low STI profileTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Nov 18, 2003·39 cites·32 claims
- 1177US9425206B2Boundary scheme for embedded poly-SiON CMOS or NVM in HKMG CMOS technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·4 cites·19 claims
- 1277US8110881B2MRAM cell structure with a blocking layer for avoiding short circuitsKAO YA-CHEN·Filed 2007·Granted Feb 7, 2012·7 cites·19 claims
- 1376US11672124B2High voltage CMOS with co-planar upper gate surfaces for embedded non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 1474US9431413B2STI recess method to embed NVM memory in HKMG replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·3 cites·18 claims
- 1573US9735245B2Recessed salicide structure to integrate a flash memory device with a high κ, metal gate logic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 15, 2017·2 cites·20 claims
- 1671US10957704B2High voltage CMOS with co-planar upper gate surfaces for embedded non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 23, 2021·0 cites·20 claims
- 1771US9412721B2Contactless communications using ferromagnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·2 cites·20 claims
- 1871US7652318B2Split-gate memory cells and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 26, 2010·3 cites·15 claims
- 1969US11063058B2Memory device with metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 2069US8750031B2Test structures, methods of manufacturing thereof, test methods, and MRAM arraysKAO YA-CHEN·Filed 2011·Granted Jun 10, 2014·2 cites·20 claims
- 2168US10050050B2Semiconductor device with metal gate memory device and metal gate logic device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 14, 2018·1 cites·20 claims
- 2268US9202817B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 1, 2015·2 cites·20 claims
- 2367US8570792B2Magnetoresistive random access memoryCHIANG TIEN-WEI·Filed 2012·Granted Oct 29, 2013·2 cites·18 claims
- 2464US10535675B2High voltage CMOS with co-planar upper gate surfaces for embedded non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·0 cites·16 claims
- 2564US8450722B2Magnetoresistive random access memory and method of making the sameLIU MING-TE·Filed 2011·Granted May 28, 2013·3 cites·20 claims
- 2663US9390927B2Contact formation for split gate flash memoryTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 12, 2016·1 cites·20 claims
- 2762US12366682B2Display deviceAUO CORP·Filed 2022·Granted Jul 22, 2025·0 cites·19 claims
- 2862US10658373B2Method for manufacturing semiconductor device with metal gate memory device and metal gate logic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·0 cites·20 claims
- 2961US7834410B2Spin torque transfer magnetic tunnel junction structureTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Nov 16, 2010·4 cites·20 claims
- 3060US7951670B2Flash memory cell with split gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 31, 2011·2 cites·8 claims
- 3158US11088040B2Cell-like floating-gate test structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·0 cites·20 claims
- 3256US11600618B2Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 3356US10971544B2Integration of magneto-resistive random access memory and capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 6, 2021·0 cites·20 claims
- 3456US9379316B2Method of fabricating a magnetoresistive random access structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 28, 2016·1 cites·20 claims
- 3556US8648401B2Domain wall assisted spin torque transfer magnetresistive random access memory structureLAI CHIH-HUANG·Filed 2010·Granted Feb 11, 2014·1 cites·14 claims
- 3655US11264292B2Cell-like floating-gate test structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·0 cites·20 claims
- 3755US10535574B2Cell-like floating-gate test structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 3855US10050047B2Method to improve floating gate uniformity for non-volatile memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 3955US2024295673A1Anti-glare layer and display device having the sameAUO CORP·Filed 2023·Application pending·0 cites
- 4053US10068773B2Contact formation for split gate flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 4, 2018·0 cites·20 claims
- 4152US11257816B2Method for manufacturing semiconductor device including dummy gate electrodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 4251US10522591B2Integration of magneto-resistive random access memory and capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 31, 2019·0 cites·19 claims
- 4346US8629518B2Sacrifice layer structure and method for magnetic tunnel junction (MTJ) etching processWANG YU-JEN·Filed 2010·Granted Jan 14, 2014·0 cites·20 claims
- 4445US6819593B2Architecture to suppress bit-line leakageTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 16, 2004·4 cites·20 claims
- 4537US10827154B2Display device with rear light transmitting moduleAU OPTRONICS CORP·Filed 2019·Granted Nov 3, 2020·0 cites·14 claims
- 4637US10473830B2Display device with haze layerAU OPTRONICS CORP·Filed 2018·Granted Nov 12, 2019·0 cites·17 claims
- 4736US8884386B2MRAM device and fabrication method thereofCHIANG TIEN-WEI·Filed 2012·Granted Nov 11, 2014·0 cites·19 claims
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