Inventor · disambiguated record
Mitsuru Kaneda
Also filed as: KANEDA MITSURU
11 granted patents·2 pending applications·44 citations·filing 2003–2019
85Inventor score
Files withMITSUBISHI ELECTRIC CORP13
Top patents by PatentIndex Score
13 records- 0180US7705398B2Semiconductor device preventing recovery breakdown and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Apr 27, 2010·9 cites·8 claims
- 0276US6838321B2Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Jan 4, 2005·22 cites·26 claims
- 0369US10347715B2Semiconductor device having improved safe operating areas and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Jul 9, 2019·1 cites·9 claims
- 0464US10205013B2Semiconductor switching element and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Feb 12, 2019·1 cites·4 claims
- 0562US7326996B2Semiconductor device and manufacturing process thereofMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Feb 5, 2008·2 cites·4 claims
- 0658US7009239B2Vertical semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Mar 7, 2006·9 cites·6 claims
- 0748US10833574B2Switching element control deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Nov 10, 2020·0 cites·5 claims
- 0848US7452756B2Semiconductor device and manufacturing process thereofMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Nov 18, 2008·0 cites·6 claims
- 0947US11158630B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Oct 26, 2021·0 cites·11 claims
- 1047US10263102B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Apr 16, 2019·0 cites·24 claims
- 1142US10593789B2Semiconductor apparatus and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Mar 17, 2020·0 cites·17 claims
- 1237US2004063302A1Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 1336US2017294527A1Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2016·Application pending·0 cites
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