Inventor · disambiguated record
Kiyoteru Kobayashi
Also filed as: KOBAYASHI KIYOTERU
22 granted patents·3 pending applications·315 citations·filing 1986–2011
96Inventor score
Files withMITSUBISHI ELECTRIC CORP16RENESAS TECH CORP6RENESAS ELECTRONICS CORP1YAMAGUCHI TADASHI1ZAMA HIDEAKI1
Top patents by PatentIndex Score
25 records- 0183US5629043ASilicon nitride film formation methodMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 13, 1997·69 cites·13 claims
- 0279US5500816ANon-volatile semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 19, 1996·39 cites·7 claims
- 0374US6501125B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 31, 2002·20 cites·5 claims
- 0468US7875539B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2008·Granted Jan 25, 2011·3 cites·19 claims
- 0568US4866493ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 12, 1989·25 cites·3 claims
- 0667US6426529B2Semiconductor memoryMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 30, 2002·13 cites·8 claims
- 0766US7517800B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Apr 14, 2009·2 cites·25 claims
- 0865US6700159B2Semiconductor device comprising trench-isolated transistorsRENESAS TECH CORP·Filed 2001·Granted Mar 2, 2004·13 cites·7 claims
- 0963US5218217ADynamic random access memory device and method of manufacturingMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jun 8, 1993·22 cites·12 claims
- 1062US8084343B2Semiconductor deviceYAMAGUCHI TADASHI·Filed 2010·Granted Dec 27, 2011·1 cites·20 claims
- 1162US6806532B2Nonvolatile semiconductor deviceRENESAS TECH CORP·Filed 2001·Granted Oct 19, 2004·10 cites·2 claims
- 1262US6710395B2Non-volatile semiconductor memory device with improved performanceRENESAS TECH CORP·Filed 2002·Granted Mar 23, 2004·8 cites·10 claims
- 1360US5017982ACapacitor in semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 21, 1991·17 cites·4 claims
- 1456US4987092AProcess for manufacturing stacked semiconductor devicesMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 22, 1991·16 cites·16 claims
- 1553US4746377ASemiconductor device with thermally oxidized insulating and arsenic diffusion layersMITSUBISHI ELECTRIC CORP·Filed 1986·Granted May 24, 1988·18 cites·3 claims
- 1651US6767790B2Methods of writing/erasing of nonvolatile semiconductor storage deviceRENESAS TECH CORP·Filed 2002·Granted Jul 27, 2004·7 cites·6 claims
- 1746US2006091451A1Semiconductor deviceRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 1842US6441444B1Semiconductor device having a nitride barrier for preventing formation of structural defectsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 27, 2002·8 cites·11 claims
- 1939US6144094ASemiconductor device including an insulation film and electrode having nitrogen added theretoMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 7, 2000·6 cites·3 claims
- 2039US5495823AThin film manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 5, 1996·10 cites·19 claims
- 2139US2002179996A1Semiconductor device having a nitride barrier for preventing formation of structural defectsMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2234US6469338B2Non-volatile semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 22, 2002·3 cites·2 claims
- 2332US5460691AMethod of treating surface of semiconductor substrateMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 24, 1995·5 cites·10 claims
- 2430US5270242AMethod for fabricatins dynamic random access memory device having a capacitor for storing impact ionization chargesMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 14, 1993·0 cites·3 claims
- 2525US2013113034A1Non-volatile semiconductor memory device, production method for same, and charge storage filmZAMA HIDEAKI·Filed 2011·Application pending·0 cites
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