Inventor · disambiguated record
Donald L. Westmoreland
Also filed as: WESTMORELAND DONALD · WESTMORELAND DONALD L
65 granted patents·9 pending applications·2,773 citations·filing 1992–2015
99Inventor score
Files withMICRON TECHNOLOGY INC61MICRON SEMICONDUCTOR INC4MILLWARD DAN B4DERDERIAN GARO J2HOFMANN JAMES J1
Top patents by PatentIndex Score
74 records- 0198US5888906APlasmaless dry contact cleaning method using interhalogen compoundsMICRON TECHNOLOGY INC·Filed 1996·Granted Mar 30, 1999·292 cites·25 claims
- 0298US5377429AMethod and appartus for subliming precursorsMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jan 3, 1995·178 cites·11 claims
- 0397US8114301B2Graphoepitaxial self-assembly of arrays of downward facing half-cylindersMILLWARD DAN B·Filed 2008·Granted Feb 14, 2012·38 cites·34 claims
- 0497US7250367B2Deposition methods using heteroleptic precursorsMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 31, 2007·140 cites·45 claims
- 0597US6958300B2Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxidesMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 25, 2005·117 cites·30 claims
- 0697US6445023B1Mixed metal nitride and boride barrier layersMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 3, 2002·185 cites·41 claims
- 0795US8993088B2Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materialsMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 31, 2015·14 cites·17 claims
- 0895US8609221B2Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfacesMILLWARD DAN B·Filed 2010·Granted Dec 17, 2013·18 cites·29 claims
- 0995US8518275B2Graphoepitaxial self-assembly of arrays of downward facing half-cylindersMILLWARD DAN B·Filed 2012·Granted Aug 27, 2013·15 cites·19 claims
- 1095US5783495AMethod of wafer cleaning, and system and cleaning solution regarding sameMICRON TECHNOLOGY INC·Filed 1996·Granted Jul 21, 1998·173 cites·39 claims
- 1194US8404124B2Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfacesMILLWARD DAN B·Filed 2007·Granted Mar 26, 2013·26 cites·22 claims
- 1294US6284316B1Chemical vapor deposition of titaniumMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 4, 2001·53 cites·43 claims
- 1394US6099604ASlurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related theretoMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 8, 2000·131 cites·64 claims
- 1493US6703319B1Compositions and methods for removing etch residueMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 9, 2004·63 cites·44 claims
- 1593US5674574AVapor delivery system for solid precursors and method regarding sameMICRON TECHNOLOGY INC·Filed 1996·Granted Oct 7, 1997·114 cites·40 claims
- 1692US6235145B1System for wafer cleaningMICRON TECHNOLOGY INC·Filed 1998·Granted May 22, 2001·110 cites·6 claims
- 1791US6312486B1Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related theretoMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 6, 2001·50 cites·25 claims
- 1890US9257256B2Templates including self-assembled block copolymer filmsMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 9, 2016·5 cites·18 claims
- 1990US8435886B2Method and system for binding halide-based contaminantsDERDERIAN GARO J·Filed 2012·Granted May 7, 2013·6 cites·11 claims
- 2089US6812990B1Method for making sol gel spacers for flat panel displaysMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 2, 2004·24 cites·6 claims
- 2189US6607173B2Film on a surface of a mold used during semiconductor device fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 19, 2003·35 cites·18 claims
- 2289US6454957B1Ruthenium and ruthenium dioxide removal method and materialMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 24, 2002·28 cites·6 claims
- 2389US5231306ATitanium/aluminum/nitrogen material for semiconductor devicesMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 27, 1993·98 cites·10 claims
- 2488US8216377B2Method and system for binding halide-based contaminantsDERDERIAN GARO J·Filed 2011·Granted Jul 10, 2012·6 cites·16 claims
- 2588US6451214B1Ruthenium and ruthenium dioxide removal method and materialMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 17, 2002·26 cites·22 claims
- 2687US6446933B1Film on a surface of a mold used during semiconductor device fabricationMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 10, 2002·34 cites·10 claims
- 2786US8691015B2Method and system for binding halide-based contaminantsMICRON TECHNOLOGY INC·Filed 2013·Granted Apr 8, 2014·4 cites·7 claims
- 2886US6537462B1Ruthenium and ruthenium dioxide removal method and materialMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 25, 2003·21 cites·40 claims
- 2986US6143192ARuthenium and ruthenium dioxide removal method and materialMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 7, 2000·50 cites·50 claims
- 3086US6012469AEtch residue cleanMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 11, 2000·68 cites·43 claims
- 3186US5318927AMethods of chemical-mechanical polishing insulating inorganic metal oxide materialsMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jun 7, 1994·96 cites·41 claims
- 3285US5393564AHigh efficiency method for performing a chemical vapor deposition utilizing a nonvolatile precursorMICRON SEMICONDUCTOR INC·Filed 1994·Granted Feb 28, 1995·60 cites·18 claims
- 3383US6783657B2Systems and methods for the electrolytic removal of metals from substratesMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 31, 2004·14 cites·40 claims
- 3483US6192899B1Etch residue clean with aqueous HF/organic solutionMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 27, 2001·24 cites·23 claims
- 3581US8456007B2Chemical vapor deposition of titaniumSANDHU GURTEJ SINGH·Filed 2008·Granted Jun 4, 2013·5 cites·7 claims
- 3681US5693377AMethod of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compoundsMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 2, 1997·49 cites·11 claims
- 3779US6664159B2Mixed metal nitride and boride barrier layersMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 16, 2003·15 cites·31 claims
- 3878US7837797B2Systems and methods for forming niobium and/or vanadium containing layers using atomic layer depositionMICRON TECHNOLOGY INC·Filed 2009·Granted Nov 23, 2010·4 cites·25 claims
- 3976US7311942B2Method for binding halide-based contaminants during formation of a titanium-based filmMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 25, 2007·11 cites·108 claims
- 4075US5384289AReductive elimination chemical vapor deposition processes utilizing organometallic precursor compounds in semiconductor wafer processingMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jan 24, 1995·56 cites·33 claims
- 4174US7922818B2Method and system for binding halide-based contaminantsMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 12, 2011·2 cites·10 claims
- 4274US6544466B1Surface modification method for molds used during semiconductor device fabricationMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 8, 2003·14 cites·19 claims
- 4373US7101779B2Method of forming barrier layersMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 5, 2006·10 cites·24 claims
- 4473US5824365AMethod of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactorMICRON TECHNOLOGY INC·Filed 1996·Granted Oct 20, 1998·33 cites·2 claims
- 4572US6143362AChemical vapor deposition of titaniumMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 7, 2000·33 cites·38 claims
- 4672US5902651AMethod of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compoundsMICRON TECHNOLOGY INC·Filed 1997·Granted May 11, 1999·31 cites·11 claims
- 4768US7482037B2Methods for forming niobium and/or vanadium containing layers using atomic layer depositionMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 27, 2009·9 cites·85 claims
- 4868US6201219B1Chamber and cleaning process thereforMICRON TECHNOLOGY INC·Filed 1998·Granted Mar 13, 2001·28 cites·43 claims
- 4967US5368687ASemiconductor processing method of etching insulating inorganic metal oxide materials and method of cleaning metals from the surface of semiconductor wafersMICRON TECHNOLOGY INC·Filed 1993·Granted Nov 29, 1994·39 cites·32 claims
- 5065US7182979B2High efficiency method for performing a chemical vapordeposition utilizing a nonvolatile precursorMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 27, 2007·5 cites·35 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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