Inventor · disambiguated record
Yung-Jung Chang
Also filed as: CHANG YUNG · CHANG YUNG-JUNG
57 granted patents·3 pending applications·230 citations·filing 1996–2023
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD51TAIWAN SEMICONDUCTOR MFG5IND TECH RES INST2MICRONBRANE MEDICAL CO LTD1WU LI-WEI1
Top patents by PatentIndex Score
60 records- 0197US10546956B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·13 cites·20 claims
- 0294US9627375B2Indented gate end of non-planar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 18, 2017·16 cites·20 claims
- 0393US9735256B2Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 15, 2017·7 cites·20 claims
- 0492US10312352B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·4 cites·20 claims
- 0592US10050128B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·5 cites·18 claims
- 0692US9653605B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 16, 2017·6 cites·19 claims
- 0791US9991285B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 5, 2018·8 cites·20 claims
- 0889US9356120B2Metal gate transistor and method for tuning metal gate profileTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 31, 2016·10 cites·20 claims
- 0988US9620621B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·5 cites·20 claims
- 1087US10164107B2Embedded source or drain region of transistor with laterally extended portionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 25, 2018·5 cites·20 claims
- 1186US9520474B2Methods of forming a semiconductor device with a gate stack having tapered sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 13, 2016·5 cites·20 claims
- 1286US2023352592A1Fin Field Effect Transistor (FinFET) Device and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1385US11380590B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 1485US10304178B2Method and system for diagnosing a semiconductor waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 28, 2019·5 cites·20 claims
- 1585US9773696B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 26, 2017·5 cites·5 claims
- 1685US9553171B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 24, 2017·5 cites·17 claims
- 1784US10177238B2High-K film apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·3 cites·20 claims
- 1883US10367079B2Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 30, 2019·2 cites·20 claims
- 1983US9142672B2Strained source and drain (SSD) structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 22, 2015·4 cites·20 claims
- 2082US12051752B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 2180US10535758B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·1 cites·20 claims
- 2280US9853154B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 26, 2017·3 cites·20 claims
- 2380US9401415B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 26, 2016·5 cites·13 claims
- 2479US12211750B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 2578US6024887APlasma method for stripping ion implanted photoresist layersTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 15, 2000·56 cites·16 claims
- 2677US11721762B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 2776US10672796B2Mechanisms for forming FINFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·1 cites·20 claims
- 2876US9147736B2High-K film apparatus and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·2 cites·19 claims
- 2976US5854136AThree-step nitride etching process for better critical dimension and better vertical sidewall profileTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Dec 29, 1998·48 cites·20 claims
- 3075US11158744B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·0 cites·20 claims
- 3174US11594635B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
- 3274US10964819B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 30, 2021·0 cites·20 claims
- 3373US11721746B2Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 3473US11669957B2Semiconductor wafer measurement method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 3573US11257931B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 3672US10128355B2Method for forming fin field effect transistor (FINFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 13, 2018·1 cites·20 claims
- 3770US11094057B2Semiconductor wafer measurement method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 3869US10840378B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·20 claims
- 3969US9660052B2Strained source and drain (SSD) structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·1 cites·20 claims
- 4067US10749014B2Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·0 cites·20 claims
- 4166US10804396B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 4266US9456536B2Method for pins detection and insertion of electronic componentIND TECH RES INST·Filed 2013·Granted Sep 27, 2016·2 cites·26 claims
- 4365US10686077B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·20 claims
- 4464US10164108B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 25, 2018·0 cites·20 claims
- 4562US10879372B2Semiconductor device with a metal gate stack having tapered sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·0 cites·20 claims
- 4662US10861954B2High-K film apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 4762US10547796B2Calibration equipment and calibration method of a mechanical systemIND TECH RES INST·Filed 2015·Granted Jan 28, 2020·1 cites·17 claims
- 4861US10340382B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 2, 2019·0 cites·20 claims
- 4961US10164109B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·0 cites·20 claims
- 5059US10762621B2Semiconductor wafer measurement method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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