Inventor · disambiguated record
Qiuhua Han
Also filed as: HAN QIUHUA
20 granted patents·21 citations·filing 2008–2018
90Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI9SEMICONDUCTOR MFG INT SHANGHAI CORP5SEMICONDUCTOR MFG INT BEIJING CORP4HAN QIUHUA2
Top patents by PatentIndex Score
20 records- 0183US9331079B2Semiconductor device and method of manufacturing the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted May 3, 2016·4 cites·19 claims
- 0277US8877651B2Semiconductor device and manufacturing method involving multilayer contact etch stopHAN QIUHUA·Filed 2011·Granted Nov 4, 2014·6 cites·14 claims
- 0376US9741820B2PMOS transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Aug 22, 2017·3 cites·17 claims
- 0471US9196725B2Semiconductor structure having common gate and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Nov 24, 2015·3 cites·11 claims
- 0571US8367554B2Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrateSEMICONDUCTOR MFG INT SHANGHAI·Filed 2011·Granted Feb 5, 2013·2 cites·11 claims
- 0663US10050036B2Semiconductor structure having common gateSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Aug 14, 2018·1 cites·18 claims
- 0762US9099338B2Method of forming high K metal gateSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Aug 4, 2015·1 cites·16 claims
- 0860US9147746B2MOS transistors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Sep 29, 2015·1 cites·13 claims
- 0955US8039402B2Methods for forming a gate and a shallow trench isolation region and for planarizating an etched surface of silicon substrateSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Oct 18, 2011·0 cites·9 claims
- 1053US9312355B2Stripe structures and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Apr 12, 2016·0 cites·15 claims
- 1152US9123812B2Semiconductor device and fabrication methodSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Sep 1, 2015·0 cites·13 claims
- 1250US8377827B2Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrateSEMICONDUCTOR MFG INT SHANGHAI·Filed 2011·Granted Feb 19, 2013·0 cites·12 claims
- 1349US9640657B2Semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted May 2, 2017·0 cites·19 claims
- 1446US10403732B2Semiconductor device including stripe structuresSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Sep 3, 2019·0 cites·12 claims
- 1545US9508609B2Fin field effect transistor and method for forming the sameSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2014·Granted Nov 29, 2016·0 cites·17 claims
- 1644US9704972B2Semiconductor structures and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Jul 11, 2017·0 cites·20 claims
- 1740US10707117B2Interconnection structure and method for manufacturing sameSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2018·Granted Jul 7, 2020·0 cites·9 claims
- 1838US9660058B2Method of FinFET formationSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 1935US9689132B2Permanent drainage ditch adapted to improve yield from farmlandHAN QIUHUA·Filed 2015·Granted Jun 27, 2017·0 cites·5 claims
- 2030US11205596B2Method of FinFET contact formationSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2017·Granted Dec 21, 2021·0 cites·20 claims
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