Inventor · disambiguated record
Tadahiko Horiuchi
Also filed as: HORIUCHI TADAHIKO
25 granted patents·348 citations·filing 1989–2022
96Inventor score
Top patents by PatentIndex Score
25 records- 0197US7821806B2Nonvolatile semiconductor memory circuit utilizing a MIS transistor as a memory cellNSCORE INC·Filed 2008·Granted Oct 26, 2010·72 cites·8 claims
- 0285US9893208B2Nonvolatile memory deviceNSCORE INC·Filed 2017·Granted Feb 13, 2018·6 cites·8 claims
- 0382US6091081AInsulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating filmNEC CORP·Filed 1997·Granted Jul 18, 2000·55 cites·13 claims
- 0479US5286664AMethod for fabricating the LDD-MOSFETNEC CORP·Filed 1992·Granted Feb 15, 1994·72 cites·3 claims
- 0578US9966141B2Nonvolatile memory cell employing hot carrier effect for data storageNSCORE INC·Filed 2016·Granted May 8, 2018·4 cites·16 claims
- 0673US7733714B2MIS-transistor-based nonvolatile memory for multilevel data storageNSCORE INC·Filed 2008·Granted Jun 8, 2010·8 cites·10 claims
- 0772US7149104B1Storage and recovery of data based on change in MIS transistor characteristicsNSCORE INC·Filed 2005·Granted Dec 12, 2006·8 cites·18 claims
- 0871US7313021B2Nonvolatile memory circuitNSCORE INC·Filed 2005·Granted Dec 25, 2007·8 cites·18 claims
- 0969US6372628B1Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor deviceNEC CORP·Filed 2000·Granted Apr 16, 2002·11 cites·3 claims
- 1068US8451657B2Nonvolatile semiconductor memory device using MIS transistorHORIUCHI TADAHIKO·Filed 2011·Granted May 28, 2013·5 cites·10 claims
- 1160US5571745AFabrication method of semiconductor device containing n- and p-channel MOSFETsNEC CORP·Filed 1995·Granted Nov 5, 1996·21 cites·9 claims
- 1259US5593923AMethod of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step annealNEC CORP·Filed 1995·Granted Jan 14, 1997·20 cites·20 claims
- 1358US12406736B2Semiconductor memory deviceNSCORE INC·Filed 2022·Granted Sep 2, 2025·0 cites·8 claims
- 1457US7791927B1Mis-transistor-based nonvolatile memory circuit with stable and enhanced performanceNSCORE INC·Filed 2009·Granted Sep 7, 2010·1 cites·8 claims
- 1555US7193888B2Nonvolatile memory circuit based on change in MIS transistor characteristicsNSCORE INC·Filed 2005·Granted Mar 20, 2007·3 cites·18 claims
- 1651US6147386ASemiconductor device and method of producing the sameNEC CORP·Filed 1999·Granted Nov 14, 2000·10 cites·4 claims
- 1749US8945293B2Silicon oxide removal apparatus and facility for recycling inert gas for use in silicon single crystal manufacturing apparatusHIGUCHI TAKASHI·Filed 2010·Granted Feb 3, 2015·0 cites·12 claims
- 1844US6162710AMethod for making MIS transistorNEC CORP·Filed 1998·Granted Dec 19, 2000·10 cites·36 claims
- 1944US5712204AMethod of making a semiconductor device having reduced junction capacitance between the source and drain regions and the substrateNEC CORP·Filed 1995·Granted Jan 27, 1998·11 cites·8 claims
- 2043US10727235B2Secure fingerprint data generating deviceNSCORE INC·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 2142US6001737AMethod of forming a semiconductor device having a titanium salicide shallow junction diffusion layerNEC CORP·Filed 1997·Granted Dec 14, 1999·9 cites·12 claims
- 2241US9159404B2Nonvolatile memory deviceNSCORE INC·Filed 2014·Granted Oct 13, 2015·0 cites·7 claims
- 2341US5043600ABiCMOS inverter circuitNEC CORP·Filed 1989·Granted Aug 27, 1991·5 cites·5 claims
- 2440US5990521ASemiconductor device and method of producing the sameNEC CORP·Filed 1996·Granted Nov 23, 1999·5 cites·7 claims
- 2533US5543359AMethod of forming a titanium silicide film involved in a semiconductor deviceNEC CORP·Filed 1994·Granted Aug 6, 1996·4 cites·31 claims
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