Inventor · disambiguated record
Zehong Li
Also filed as: LI ZEHONG
12 granted patents·1 pending application·11 citations·filing 2016–2022
83Inventor score
Files withUNIV ELECTRONIC SCI & TECH CHINA11GUIZHOU E CHIP MICROELECTRONICS TECH CO LTD1UNIV ELECTRONIC SCIENCE & TECH CHINA1
Top patents by PatentIndex Score
13 records- 0178US9741837B2Bidirectional insulated gate bipolar transistorUNIV ELECTRONIC SCIENCE & TECH CHINA·Filed 2016·Granted Aug 22, 2017·4 cites·4 claims
- 0265US10923583B2IGBT device with MOS controllable hole pathUNIV ELECTRONIC SCI & TECH CHINA·Filed 2019·Granted Feb 16, 2021·1 cites·7 claims
- 0365US10158350B1Level shifter circuit for gate driving of gate control deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2018·Granted Dec 18, 2018·2 cites·8 claims
- 0465US10135426B1Gate charge and discharge regulating circuit for gate control deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2018·Granted Nov 20, 2018·2 cites·3 claims
- 0559US10546951B2Trench MOS device with improved single event burn-out enduranceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2016·Granted Jan 28, 2020·1 cites·2 claims
- 0659US10340332B2Folded termination with internal field plateUNIV ELECTRONIC SCI & TECH CHINA·Filed 2016·Granted Jul 2, 2019·1 cites·20 claims
- 0749US12342558B2Split gate CSTBT with current clamping PMOS and manufacturing method thereofUNIV ELECTRONIC SCI & TECH CHINA·Filed 2022·Granted Jun 24, 2025·0 cites·5 claims
- 0847US12342584B2Three-dimensional carrier stored trench IGBT and manufacturing method thereofUNIV ELECTRONIC SCI & TECH CHINA·Filed 2022·Granted Jun 24, 2025·0 cites·9 claims
- 0936US9929285B2Super-junction schottky diodeUNIV ELECTRONIC SCI & TECH CHINA·Filed 2017·Granted Mar 27, 2018·0 cites·4 claims
- 1035US9905682B2Bidirectional MOS device and method for preparing the sameUNIV ELECTRONIC SCI & TECH CHINA·Filed 2016·Granted Feb 27, 2018·0 cites·8 claims
- 1132US2018026129A1Trench Edge Termination Structure for Power Semiconductor DevicesUNIV ELECTRONIC SCI & TECH CHINA·Filed 2017·Application pending·0 cites
- 1230US10056452B2Method for manufacturing vertical super junction drift layer of power semiconductor devicesUNIV ELECTRONIC SCI & TECH CHINA·Filed 2016·Granted Aug 21, 2018·0 cites·6 claims
- 1326US10523129B2Synchronous rectification circuitGUIZHOU E CHIP MICROELECTRONICS TECH CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·4 claims
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