Inventor · disambiguated record
Yuji Furumura
Also filed as: FURUMURA YUJI
34 granted patents·8 pending applications·1,122 citations·filing 1980–2018
97Inventor score
Top patents by PatentIndex Score
42 records- 0194US8724978B2Fluid heating-cooling cylinder deviceFURUMURA YUJI·Filed 2012·Granted May 13, 2014·15 cites·20 claims
- 0293US5314724AProcess for forming silicon oxide filmFUJITSU LTD·Filed 1991·Granted May 24, 1994·605 cites·26 claims
- 0393US4855254AMethod of growing a single crystalline β-SiC layer on a silicon substrateFUJITSU LTD·Filed 1988·Granted Aug 8, 1989·71 cites·12 claims
- 0492US8237622B2Base sheetFURUMURA YUJI·Filed 2007·Granted Aug 7, 2012·26 cites·4 claims
- 0591US8440487B2Methods for manufacturing radio frequency (RF) powderFURUMURA YUJI·Filed 2012·Granted May 14, 2013·13 cites·20 claims
- 0683US8933784B2RF powder particle, RF powder, and RF powder-containing baseFURUMURA YUJI·Filed 2007·Granted Jan 13, 2015·11 cites·20 claims
- 0782US8766853B2Method for adding RF powder and RF powder-added base sheetFURUMURA YUJI·Filed 2007·Granted Jul 1, 2014·12 cites·21 claims
- 0880US5103285ASilicon carbide barrier between silicon substrate and metal layerFUJITSU LTD·Filed 1988·Granted Apr 7, 1992·40 cites·8 claims
- 0980US4876219AMethod of forming a heteroepitaxial semiconductor thin film using amorphous buffer layersFUJITSU LTD·Filed 1989·Granted Oct 24, 1989·52 cites·8 claims
- 1079US8178415B2Method for manufacturing RF powderFURUMURA YUJI·Filed 2007·Granted May 15, 2012·10 cites·14 claims
- 1176US5270224AMethod of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1992·Granted Dec 14, 1993·41 cites·5 claims
- 1275US5231057AMethod of depositing insulating layer on underlying layer using plasma-assisted cvd process using pulse-modulated plasmaFUJITSU LTD·Filed 1991·Granted Jul 27, 1993·62 cites·8 claims
- 1375US5111266ASemiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1991·Granted May 5, 1992·38 cites·9 claims
- 1471US8766802B2Base data management systemFURUMURA YUJI·Filed 2007·Granted Jul 1, 2014·2 cites·14 claims
- 1569US5082695AMethod of fabricating an x-ray exposure maskFUJITSU LTD·Filed 1989·Granted Jan 21, 1992·19 cites·11 claims
- 1668US9709340B2Fluid heat exchanging apparatusPHILTECH INC·Filed 2014·Granted Jul 18, 2017·1 cites·11 claims
- 1767US8154456B2RF powder-containing baseFURUMURA YUJI·Filed 2008·Granted Apr 10, 2012·4 cites·16 claims
- 1866US5518937ASemiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1995·Granted May 21, 1996·26 cites·2 claims
- 1963US8318047B2Method for providing RF powder and RF powder-containing liquidFURUMURA YUJI·Filed 2007·Granted Nov 27, 2012·4 cites·17 claims
- 2063US8125069B2Semiconductor device and etching apparatusHAYASHI TOSHIO·Filed 2010·Granted Feb 28, 2012·1 cites·9 claims
- 2163US4906593AMethod of producing a contact plugFUJITSU LTD·Filed 1988·Granted Mar 6, 1990·22 cites·11 claims
- 2260US2018223431A1Film-forming methodPHILTECH INC·Filed 2018·Application pending·0 cites
- 2356US9915483B2Fluid heat exchanging apparatusPHILTECH INC·Filed 2014·Granted Mar 13, 2018·0 cites·12 claims
- 2455US8188924B2RF powder and method for manufacturing the sameFURUMURA YUJI·Filed 2008·Granted May 29, 2012·0 cites·7 claims
- 2555US2017152599A1Film-forming apparatusPHILTECH INC·Filed 2016·Application pending·0 cites
- 2654US2017275162A1Method of operating gas generating apparatusPHILTECH INC·Filed 2017·Application pending·0 cites
- 2754US2015083381A1Bonded fluid heat exchanging apparatusPHILTECH INC·Filed 2014·Application pending·0 cites
- 2852US9340736B2Solid gasification apparatusPHILTECH INC·Filed 2015·Granted May 17, 2016·0 cites·5 claims
- 2952US2016107891A1Gas Generating ApparatusPHILTECH INC·Filed 2015·Application pending·0 cites
- 3051US8686743B2Substrate, substrate holding apparatus, analysis apparatus, program, detection system, semiconductor device, display apparatus, and semiconductor manufacturing apparatusFURUMURA YUJI·Filed 2009·Granted Apr 1, 2014·0 cites·14 claims
- 3151US8477072B2Radio frequency (RF) particlesFURUMURA YUJI·Filed 2012·Granted Jul 2, 2013·0 cites·16 claims
- 3249US8704202B2RF powder particles including an inductance element, a capacitance element, and a photovoltaic cell and method for exciting RF powderFURUMURA YUJI·Filed 2007·Granted Apr 22, 2014·0 cites·28 claims
- 3347US5506443AMultilayer insulating film of semiconductor device and method for forming the filmFUJITSU LTD·Filed 1994·Granted Apr 9, 1996·15 cites·8 claims
- 3443US10428422B2Film-forming methodPHILTECH INC·Filed 2017·Granted Oct 1, 2019·0 cites·10 claims
- 3543US5233163AGraphite columnar heating body for semiconductor wafer heatingFUJITSU LTD·Filed 1991·Granted Aug 3, 1993·14 cites·23 claims
- 3643US2010066619A1Magnetic coupling device and reading deviceFURUMURA YUJI·Filed 2007·Application pending·0 cites
- 3742US2009102025A1Semiconductor device and method for manufacturing the same, dry-etching process, method for making electrical connections, and etching apparatusHAYASHI TOSHIO·Filed 2006·Application pending·0 cites
- 3842US2016348239A1Heat Beam Film-Forming ApparatusPHILTECH INC·Filed 2015·Application pending·0 cites
- 3940US4510177AMethod and apparatus for vapor phase depositionFUJITSU LTD·Filed 1982·Granted Apr 9, 1985·6 cites·11 claims
- 4035US5298458AMethod of forming tungsten filmFUJITSU LTD·Filed 1992·Granted Mar 29, 1994·7 cites·8 claims
- 4134US4509070AMetal-insulator-semiconductor transistor deviceFUJITSU LTD·Filed 1980·Granted Apr 2, 1985·3 cites·15 claims
- 4231US5763005AMethod for forming multilayer insulating film of semiconductor deviceFUJITSU LTD·Filed 1996·Granted Jun 9, 1998·2 cites·8 claims
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