Inventor · disambiguated record
Matthew J. Breitwisch
Also filed as: BREITWISCH MATTHEW · BREITWISCH MATTHEW J · BREITWISCH MATTHEW JOSEPH
101 granted patents·8 pending applications·1,695 citations·filing 2001–2014
99Inventor score
Top patents by PatentIndex Score
109 records- 0199US8107276B2Resistive memory devices having a not-and (NAND) structureBREITWISCH MATTHEW J·Filed 2009·Granted Jan 31, 2012·246 cites·16 claims
- 0299US7411252B2Substrate backgate for trigate FETIBM·Filed 2005·Granted Aug 12, 2008·156 cites·16 claims
- 0398US8589320B2Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocksBREITWISCH MATTHEW J·Filed 2012·Granted Nov 19, 2013·46 cites·13 claims
- 0497US8338225B2Method to reduce a via area in a phase change memory cellBREITWISCH MATTHEW J·Filed 2012·Granted Dec 25, 2012·30 cites·14 claims
- 0597US7691684B2Fin-type antifuseIBM·Filed 2008·Granted Apr 6, 2010·49 cites·17 claims
- 0697US7514705B2Phase change memory cell with limited switchable volumeIBM·Filed 2006·Granted Apr 7, 2009·55 cites·13 claims
- 0796US7560721B1Phase change material with filament electrodeIBM·Filed 2008·Granted Jul 14, 2009·42 cites·15 claims
- 0895US8946666B2Ge-Rich GST-212 phase change memory materialsCHENG HUAI-YU·Filed 2011·Granted Feb 3, 2015·16 cites·12 claims
- 0995US8310864B2Self-aligned bit line under word line memory arrayLUNG HSIANG-LAN·Filed 2010·Granted Nov 13, 2012·17 cites·30 claims
- 1095US8311965B2Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance materialBREITWISCH MATTHEW J·Filed 2009·Granted Nov 13, 2012·71 cites·12 claims
- 1195US8178386B2Phase change memory cell array with self-converged bottom electrode and method for manufacturingLUNG HSIANG-LAN·Filed 2007·Granted May 15, 2012·26 cites·11 claims
- 1295US8138028B2Method for manufacturing a phase change memory device with pillar bottom electrodeLUNG HSIANG LAN·Filed 2007·Granted Mar 20, 2012·25 cites·27 claims
- 1395US7426134B2Sense circuit for resistive memoryINFINEON TECHNOLOGIES CORP·Filed 2006·Granted Sep 16, 2008·105 cites·24 claims
- 1494US8729521B2Self aligned fin-type programmable memory cellLUNG HSIANG-LAN·Filed 2010·Granted May 20, 2014·15 cites·11 claims
- 1594US8728859B2Small footprint phase change memory cellBREITWISCH MATTHEW J·Filed 2010·Granted May 20, 2014·14 cites·16 claims
- 1694US7879645B2Fill-in etching free pore deviceMACRONIX INT CO LTD·Filed 2008·Granted Feb 1, 2011·31 cites·12 claims
- 1794US7505334B1Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionIBM·Filed 2008·Granted Mar 17, 2009·34 cites·1 claims
- 1894US7485487B1Phase change memory cell with electrodeIBM·Filed 2008·Granted Feb 3, 2009·28 cites·17 claims
- 1993US8471236B2Flat lower bottom electrode for phase change memory cellBREITWISCH MATTHEW J·Filed 2012·Granted Jun 25, 2013·12 cites·9 claims
- 2093US7551473B2Programmable resistive memory with diode structureMACRONIX INT CO LTD·Filed 2007·Granted Jun 23, 2009·31 cites·25 claims
- 2192US8809828B2Small footprint phase change memory cellIBM·Filed 2014·Granted Aug 19, 2014·10 cites·4 claims
- 2292US8363463B2Phase change memory having one or more non-constant doping profilesMACRONIX INT CO LTD·Filed 2010·Granted Jan 29, 2013·16 cites·10 claims
- 2392US8036014B2Phase change memory program method without over-resetMACRONIX INT CO LTD·Filed 2008·Granted Oct 11, 2011·27 cites·32 claims
- 2492US8012790B2Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cellIBM·Filed 2009·Granted Sep 6, 2011·15 cites·11 claims
- 2592US7943420B1Single mask adder phase change memory elementIBM·Filed 2009·Granted May 17, 2011·18 cites·17 claims
- 2692US7825460B2Vertical field effect transistor arrays and methods for fabrication thereofIBM·Filed 2006·Granted Nov 2, 2010·16 cites·5 claims
- 2791US8238149B2Methods and apparatus for reducing defect bits in phase change memorySHIH YEN-HAO·Filed 2010·Granted Aug 7, 2012·15 cites·20 claims
- 2891US7868313B2Phase change memory device and method of manufactureIBM·Filed 2008·Granted Jan 11, 2011·25 cites·14 claims
- 2991US7288802B2Virtual body-contacted trigateIBM·Filed 2005·Granted Oct 30, 2007·18 cites·23 claims
- 3090US8987700B2Thermally confined electrode for programmable resistance memoryLAI SHENG-CHIH·Filed 2011·Granted Mar 24, 2015·8 cites·21 claims
- 3190US8648326B2Phase change memory electrode with sheath for reduced programming currentBREITWISCH MATTHEW J·Filed 2011·Granted Feb 11, 2014·10 cites·14 claims
- 3290US8426242B2Composite target sputtering for forming doped phase change materialsCHENG HUAI-YU·Filed 2011·Granted Apr 23, 2013·11 cites·20 claims
- 3389US8772747B2Composite target sputtering for forming doped phase change materialsMACRONIX INT CO LTD·Filed 2013·Granted Jul 8, 2014·8 cites·10 claims
- 3489US8105859B2In via formed phase change memory cell with recessed pillar heaterBREITWISCH MATTHEW J·Filed 2009·Granted Jan 31, 2012·16 cites·8 claims
- 3589US7927911B2Wafer bonded access device for multi-layer phase change memory using lock-and-key alignmentIBM·Filed 2009·Granted Apr 19, 2011·17 cites·23 claims
- 3688US8633464B2In via formed phase change memory cell with recessed pillar heaterBREITWISCH MATTHEW J·Filed 2012·Granted Jan 21, 2014·7 cites·8 claims
- 3788US8030130B2Phase change memory device with plated phase change materialIBM·Filed 2009·Granted Oct 4, 2011·14 cites·16 claims
- 3888US7880194B2Cross point switch using phase change materialIBM·Filed 2008·Granted Feb 1, 2011·16 cites·20 claims
- 3987US8324605B2Dielectric mesh isolated phase change structure for phase change memoryLUNG HSIANG-LAN·Filed 2008·Granted Dec 4, 2012·16 cites·21 claims
- 4087US8283650B2Flat lower bottom electrode for phase change memory cellBREITWISCH MATTHEW J·Filed 2009·Granted Oct 9, 2012·12 cites·5 claims
- 4187US7910911B2Phase change memory with tapered heaterIBM·Filed 2009·Granted Mar 22, 2011·12 cites·10 claims
- 4287US6518614B1Embedded one-time programmable non-volatile memory using prompt shift deviceIBM·Filed 2002·Granted Feb 11, 2003·32 cites·9 claims
- 4386US8330137B2Pore phase change material cell fabricated from recessed pillarSCHROTT ALEJANDRO G·Filed 2011·Granted Dec 11, 2012·6 cites·20 claims
- 4486US8110901B2Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillarsBREITWISCH MATTHEW J·Filed 2010·Granted Feb 7, 2012·6 cites·8 claims
- 4584US8129268B2Self-aligned lower bottom electrodeBREITWISCH MATTHEW J·Filed 2009·Granted Mar 6, 2012·10 cites·17 claims
- 4684US7960203B2Pore phase change material cell fabricated from recessed pillarIBM·Filed 2008·Granted Jun 14, 2011·9 cites·18 claims
- 4784US7479671B2Thin film phase change memory cell formed on silicon-on-insulator substrateIBM·Filed 2006·Granted Jan 20, 2009·12 cites·19 claims
- 4882US8686391B2Pore phase change material cell fabricated from recessed pillarSCHROTT ALEJANDRO G·Filed 2012·Granted Apr 1, 2014·4 cites·17 claims
- 4982US8447714B2System for electronic learning synapse with spike-timing dependent plasticity using phase change memoryBREITWISCH MATTHEW JOSEPH·Filed 2009·Granted May 21, 2013·25 cites·25 claims
- 5081US8860111B2Phase change memory cell array with self-converged bottom electrode and method for manufacturingLUNG HSIANG-LAN·Filed 2012·Granted Oct 14, 2014·4 cites·20 claims
Showing the top 50 of 109 patent records by PatentIndex Score.
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