Inventor · disambiguated record
Shang-Wei Lin
Also filed as: LIN SHANG-WEI
5 granted patents·1 pending application·24 citations·filing 2003–2014
77Inventor score
Top patents by PatentIndex Score
6 records- 0182US7889556B2Flash memory having insulating liners between source/drain lines and channelsMACRONIX INT CO LTD·Filed 2010·Granted Feb 15, 2011·7 cites·6 claims
- 0281US7668010B2Flash memory having insulating liners between source/drain lines and channelsMACRONIX INT CO LTD·Filed 2008·Granted Feb 23, 2010·7 cites·22 claims
- 0372US8836004B2Memory deviceHUANG YU-FONG·Filed 2010·Granted Sep 16, 2014·5 cites·18 claims
- 0456US8466508B2Non-volatile memory structure including stress material between stacked patternsKU SHAW-HUNG·Filed 2007·Granted Jun 18, 2013·1 cites·18 claims
- 0553US7279428B2Method of preventing photoresist residuesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 9, 2007·4 cites·29 claims
- 0640US2016020216A1Semiconductor device and method of manufacturing thereof using a flowable material during the control gate removal for word line end formationMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
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