Inventor · disambiguated record
Hisayuki Kato
Also filed as: KATO HISAYUKI
28 granted patents·4 pending applications·510 citations·filing 1990–2018
96Inventor score
Top patents by PatentIndex Score
32 records- 0191US5053297ANonaqueous electrolyte secondary batterySONY CORP·Filed 1990·Granted Oct 1, 1991·115 cites·6 claims
- 0290US5427875ANon-aqueous electrolyte secondary cellSONY CORP·Filed 1992·Granted Jun 27, 1995·92 cites·8 claims
- 0389US6001507ANon-aqueous electrolyte secondary batterySONY CORP·Filed 1997·Granted Dec 14, 1999·113 cites·12 claims
- 0484US10087813B2Heat exchangerFUTABA IND CO LTD·Filed 2014·Granted Oct 2, 2018·5 cites·2 claims
- 0577US6579754B2Semiconductor memory device having ferroelectric film and manufacturing method thereofHITACHI LTD·Filed 2001·Granted Jun 17, 2003·15 cites·12 claims
- 0673US7808076B2Semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Oct 5, 2010·4 cites·35 claims
- 0772US9261005B2Exhaust gas heat recovery deviceFUTABA IND CO LTD·Filed 2012·Granted Feb 16, 2016·1 cites·5 claims
- 0871US6239457B1Semiconductor memory device and manufacturing method thereofHITACHI LTD·Filed 1999·Granted May 29, 2001·28 cites·19 claims
- 0966US5670793ASemiconductor device having a polycrystalline silicon film with crystal grains having a uniform orientationHITACHI LTD·Filed 1995·Granted Sep 23, 1997·22 cites·19 claims
- 1065US6623986B2Method of manufacturing a ferroelectric memory deviceHITACHI LTD·Filed 2001·Granted Sep 23, 2003·9 cites·2 claims
- 1164US6278145B1PN junction diode having enhanced light-gathering efficiencyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 21, 2001·25 cites·10 claims
- 1264US5370710ANonaqueous electrolyte secondary cellSONY CORP·Filed 1993·Granted Dec 6, 1994·32 cites·3 claims
- 1355US9449883B2Semiconductor device and method for manufacturing the sameKATO HISAYUKI·Filed 2009·Granted Sep 20, 2016·1 cites·7 claims
- 1454US8194967B2Article visual inspection apparatusFUKUSAWA MITSUYASU·Filed 2006·Granted Jun 5, 2012·2 cites·5 claims
- 1553US10662530B2Support pin and film deposition deviceSAKAI DISPLAY PRODUCTS CORP·Filed 2018·Granted May 26, 2020·0 cites·16 claims
- 1653US6204155B1Semiconductor device and production thereofHITACHI LTD·Filed 2000·Granted Mar 20, 2001·2 cites·10 claims
- 1751US6445025B2Semiconductor memory device and manufacturing method thereofHITACHI LTD·Filed 2001·Granted Sep 3, 2002·2 cites·6 claims
- 1850US6326216B1Process for producing semiconductor integrated circuit deviceHITACHI LTD·Filed 1997·Granted Dec 4, 2001·13 cites·55 claims
- 1948US6127065AMethod of manufacturing cathode active material and nonaqueous electrolyte secondary batterySONY CORP·Filed 1998·Granted Oct 3, 2000·20 cites·5 claims
- 2045US8487402B2Semiconductor deviceKONO KAZUSHI·Filed 2010·Granted Jul 16, 2013·0 cites·16 claims
- 2145US8487403B2Semiconductor deviceKONO KAZUSHI·Filed 2010·Granted Jul 16, 2013·0 cites·33 claims
- 2245US2015354709A1Valve DeviceFUTABA IND CO LTD·Filed 2014·Application pending·0 cites
- 2344US6316798B1Ferroelectric memory device and method for manufacturing the sameHITACHI LTD·Filed 1997·Granted Nov 13, 2001·6 cites·4 claims
- 2444US2015218997A1Exhaust Heat Recovery DeviceFUTABA IND CO LTD·Filed 2013·Application pending·0 cites
- 2542US6995058B2Semiconductor memory device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Feb 7, 2006·0 cites·12 claims
- 2641US6559037B2Process for producing semiconductor device having crystallized film formed from deposited amorphous filmHITACHI LTD·Filed 2001·Granted May 6, 2003·0 cites·6 claims
- 2740US6429039B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 6, 2002·0 cites·3 claims
- 2840US2002048941A1Process for producing semiconductor integrated circuit deviceFiled 2001·Application pending·0 cites
- 2939US6906365B2Ferroelectric memory device including an upper protection electrodeHITACHI LTD·Filed 2001·Granted Jun 14, 2005·0 cites·2 claims
- 3038US2004178425A1Semiconductor device having fuseRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 3134US6080611ASemiconductor device and production thereofHITACHI LTD·Filed 1997·Granted Jun 27, 2000·2 cites·4 claims
- 3231US6187100B1Semiconductor device and production thereofHITACHI LTD·Filed 1999·Granted Feb 13, 2001·1 cites·11 claims
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