Inventor · disambiguated record
Jong-Wan Jung
Also filed as: JUNG JONG WAN
11 granted patents·177 citations·filing 1997–2009
90Inventor score
Files withSAMSUNG ELECTRONICS CO LTD5HYUNDAI ELECTRONICS IND2LG SEMICON CO LTD2HYNIX SEMICONDUCTOR INC1LEE SEOK-HA1
Top patents by PatentIndex Score
11 records- 0197US7518172B2Image sensor having improved sensitivity and decreased crosstalk and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·52 cites·23 claims
- 0290US7825438B2CMOS image sensor having drive transistor with increased gate surface area and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 2, 2010·15 cites·13 claims
- 0386US7579637B2Image sensing device for reducing pixel-to-pixel crosstalkSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 25, 2009·10 cites·14 claims
- 0484US6204105B1Method for fabricating a polycide semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Mar 20, 2001·66 cites·15 claims
- 0566US8174057B2CMOS image device with local impurity regionLEE SEOK-HA·Filed 2009·Granted May 8, 2012·2 cites·10 claims
- 0666US6498085B2Semiconductor device and method of fabricating the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Dec 24, 2002·12 cites·9 claims
- 0762US6479357B1Method for fabricating semiconductor device with copper gate electrodeHYUNDAI ELECTRONICS IND·Filed 2000·Granted Nov 12, 2002·11 cites·6 claims
- 0853US7514733B2CMOS image device and local impurity region and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 7, 2009·0 cites·10 claims
- 0947US7601580B2Image sensor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·0 cites·11 claims
- 1046US6914311B2Semiconductor device having doped gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 5, 2005·3 cites·4 claims
- 1138US5985744AForming a silicide in predetermined areas of a semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Nov 16, 1999·6 cites·18 claims
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