Inventor · disambiguated record
Kazukuni Hara
Also filed as: HARA KAZUKUNI
25 granted patents·4 pending applications·1,336 citations·filing 1995–2021
96Inventor score
Top patents by PatentIndex Score
29 records- 0198US5976936ASilicon carbide semiconductor deviceDENSO CORP·Filed 1997·Granted Nov 2, 1999·275 cites·10 claims
- 0297US6057558ASilicon carbide semiconductor device and manufacturing method thereofDENSON CORP·Filed 1998·Granted May 2, 2000·266 cites·17 claims
- 0397US6020600ASilicon carbide semiconductor device with trenchNIPPON DENSO CO·Filed 1997·Granted Feb 1, 2000·211 cites·13 claims
- 0497US5915180AProcess for producing a semiconductor device having a single thermal oxidizing stepDENSO CORP·Filed 1995·Granted Jun 22, 1999·217 cites·13 claims
- 0593US6054752ASemiconductor deviceDENSO CORP·Filed 1998·Granted Apr 25, 2000·125 cites·32 claims
- 0691US6451112B1Method and apparatus for fabricating high quality single crystalDENSO CORP·Filed 2000·Granted Sep 17, 2002·47 cites·27 claims
- 0788US6214108B1Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the sameTOYODA CHUO KENKYUSHO KK·Filed 1999·Granted Apr 10, 2001·61 cites·31 claims
- 0882US6770137B2Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the sameDENSO CORP·Filed 2001·Granted Aug 3, 2004·20 cites·7 claims
- 0979US5723376AMethod of manufacturing SiC semiconductor device having double oxide film formation to reduce film defectsNIPPON DENSO CO·Filed 1996·Granted Mar 3, 1998·46 cites·16 claims
- 1078US6830618B2Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the sameDENSO CORP·Filed 2001·Granted Dec 14, 2004·18 cites·19 claims
- 1177US7147714B2Manufacturing method of silicon carbide single crystalsDENSO CORP·Filed 2004·Granted Dec 12, 2006·16 cites·23 claims
- 1276US10262863B2Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatusSHOWA DENKO KK·Filed 2015·Granted Apr 16, 2019·2 cites·9 claims
- 1374US7112242B2Manufacturing method for producing silicon carbide crystal using source gasesDENSO CORP·Filed 2004·Granted Sep 26, 2006·9 cites·14 claims
- 1469US10896831B2Film forming apparatusNUFLARE TECHNOLOGY INC·Filed 2018·Granted Jan 19, 2021·1 cites·10 claims
- 1565US6746787B2Manufacturing method of silicon carbide single crystalsDENSO CORP·Filed 2001·Granted Jun 8, 2004·9 cites·5 claims
- 1664US6670282B2Method and apparatus for producing silicon carbide crystalDENSO CORP·Filed 2001·Granted Dec 30, 2003·7 cites·23 claims
- 1757US11810783B2Gallium nitride semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2021·Granted Nov 7, 2023·0 cites·8 claims
- 1856US7217323B2Equipment and method for manufacturing silicon carbide single crystalDENSO CORP·Filed 2004·Granted May 15, 2007·4 cites·42 claims
- 1954US8882911B2Apparatus for manufacturing silicon carbide single crystalTOKUDA YUUICHIROU·Filed 2011·Granted Nov 11, 2014·2 cites·15 claims
- 2053US10745824B2Film forming apparatusNUFLARE TECHNOLOGY INC·Filed 2017·Granted Aug 18, 2020·0 cites·16 claims
- 2152US2009223447A1Apparatus for producing silicon carbide single crystalDENSO CORP·Filed 2009·Application pending·0 cites
- 2249US11784039B2Method for manufacturing gallium nitride semiconductor deviceDENSO CORP·Filed 2021·Granted Oct 10, 2023·0 cites·5 claims
- 2349US2018135175A1Film forming apparatusNUFLARE TECHNOLOGY INC·Filed 2017·Application pending·0 cites
- 2448US11810821B2Semiconductor chip and method for manufacturing the sameDENSO CORP·Filed 2021·Granted Nov 7, 2023·0 cites·6 claims
- 2547US11107892B2SiC epitaxial wafer and method for producing sameSHOWA DENKO KK·Filed 2018·Granted Aug 31, 2021·0 cites·7 claims
- 2646US9644286B2Silicon carbide single crystal manufacturing apparatusHARA KAZUKUNI·Filed 2012·Granted May 9, 2017·0 cites·7 claims
- 2746US2011155051A1Manufacturing apparatus and manufacturing method of silicon carbide single crystalDENSO CORP·Filed 2010·Application pending·0 cites
- 2838US2019376206A1SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAMESHOWA DENKO KK·Filed 2017·Application pending·0 cites
- 2931US9328431B2Apparatus for manufacturing a silicon carbide single crystal comprising a mounting portion and a purge gas introduction systemHARA KAZUKUNI·Filed 2011·Granted May 3, 2016·0 cites·20 claims
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