Inventor · disambiguated record
Barbara Hasler
Also filed as: HASLER BARBARA
12 granted patents·218 citations·filing 1982–2011
91Inventor score
Top patents by PatentIndex Score
12 records- 0188US6708405B2Method for producing an electrically conducting connectionINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 23, 2004·56 cites·23 claims
- 0287US6118159AElectrically programmable memory cell configurationSIEMENS AG·Filed 1999·Granted Sep 12, 2000·66 cites·3 claims
- 0385US8581405B2Integrated circuit having a semiconductor substrate with barrier layerDERTINGER STEPHAN·Filed 2011·Granted Nov 12, 2013·11 cites·6 claims
- 0483US6309930B1SRAM cell arrangement and method for manufacturing sameSIEMENS AG·Filed 2000·Granted Oct 30, 2001·24 cites·5 claims
- 0579US7977798B2Integrated circuit having a semiconductor substrate with a barrier layerINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jul 12, 2011·8 cites·11 claims
- 0671US7745321B2Solder contacts and methods of forming sameQIMONDA AG·Filed 2008·Granted Jun 29, 2010·5 cites·11 claims
- 0763US4380489AMethod of producing polysilicon structure in the 1 μm range on substrates containing integrated semiconductor circuits by plasma etchingSIEMENS AG·Filed 1982·Granted Apr 19, 1983·26 cites·6 claims
- 0858US8263491B2Substrate with feedthrough and method for producing the sameBINDER FLORIAN·Filed 2007·Granted Sep 11, 2012·3 cites·17 claims
- 0958US7973417B2Integrated circuit and method of fabricating the sameQIMONDA AG·Filed 2008·Granted Jul 5, 2011·1 cites·25 claims
- 1047US4479850AMethod for etching integrated semiconductor circuits containing double layers consisting of polysilicon and metal silicideSIEMENS AG·Filed 1984·Granted Oct 30, 1984·14 cites·10 claims
- 1143US8048801B2Substrate with feedthrough and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 1, 2011·0 cites·24 claims
- 1238US6222753B1SRAM cell arrangement and method for manufacturing sameSIEMENS AG·Filed 1998·Granted Apr 24, 2001·4 cites·5 claims
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