Inventor · disambiguated record
Jesmin Haq
Also filed as: HAQ JESMIN
35 granted patents·1 pending application·158 citations·filing 2011–2025
96Inventor score
Top patents by PatentIndex Score
36 records- 0198US11800811B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·4 cites·20 claims
- 0298US10069064B1Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the sameHEADWAY TECH INC·Filed 2017·Granted Sep 4, 2018·59 cites·24 claims
- 0395US11527711B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 0495US10520818B1Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·21 claims
- 0594US9972777B1MTJ device process/integration method with pre-patterned seed layerHEADWAY TECH INC·Filed 2017·Granted May 15, 2018·11 cites·18 claims
- 0692US10522751B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
- 0791US8992712B2Method for manufacturing electronic devices and electronic devices thereofUNIV ARIZONA·Filed 2012·Granted Mar 31, 2015·14 cites·20 claims
- 0890US8481859B2Method of preparing a flexible substrate assembly and flexible substrate assembly therefromHAQ JESMIN·Filed 2011·Granted Jul 9, 2013·18 cites·21 claims
- 0989US10103322B1Method to remove sidewall damage after MTJ etchingHEADWAY TECH INC·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 1088US9887350B2MTJ etching with improved uniformity and profile by adding passivation stepHEADWAY TECH INC·Filed 2015·Granted Feb 6, 2018·6 cites·17 claims
- 1187US11088320B2Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·3 cites·20 claims
- 1286US11430945B2MTJ device performance by adding stress modulation layer to MTJ device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·4 cites·20 claims
- 1385US12207566B2MTJ device performance by adding stress modulation layer to MTJ device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1485US10944049B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 9, 2021·2 cites·16 claims
- 1585US10475991B2Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·3 cites·21 claims
- 1684US10359699B2Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·2 cites·21 claims
- 1784US9155190B2Method of preparing a flexible substrate assembly and flexible substrate assembly therefromHAQ JESMIN·Filed 2013·Granted Oct 6, 2015·8 cites·20 claims
- 1883US12402539B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 1983US10921707B2Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·2 cites·20 claims
- 2082US11785864B2MTJ device performance by adding stress modulation layer to mtj device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·19 claims
- 2179US10446741B2Multiple hard mask patterning to fabricate 20nm and below MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 15, 2019·2 cites·20 claims
- 2278US10854809B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 1, 2020·1 cites·20 claims
- 2378US2025169373A1Mtj device performance by adding stress modulation layer to mtj device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2477US11963457B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 2575US11081642B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 2675US10475987B1Method for fabricating a magnetic tunneling junction (MTJ) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·15 claims
- 2773US9880473B2Surface treatment method for dielectric anti-reflective coating (DARC) to shrink photoresist critical dimension (CD)HEADWAY TECH INC·Filed 2016·Granted Jan 30, 2018·1 cites·20 claims
- 2872US12310245B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 2971US11723286B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 3071US10680168B2Ion beam etching fabricated sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·1 cites·20 claims
- 3170US11573494B2Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·0 cites·20 claims
- 3270US11217746B2Ion beam etching fabricated sub 30nm Vias to reduce conductive material re-deposition for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·0 cites·20 claims
- 3369US10831104B2Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 3464US11631802B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2019·Granted Apr 18, 2023·0 cites·9 claims
- 3559US10868244B2Multiple hard mask patterning to fabricate 20nm and below MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 3643US11895928B2Integration scheme for three terminal spin-orbit-torque (SOT) switching devicesHEADWAY TECH INC·Filed 2019·Granted Feb 6, 2024·0 cites·12 claims
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