Inventor · disambiguated record
Ryan M. Hatcher
Also filed as: HATCHER RYAN · HATCHER RYAN M · HATCHER RYAN MICHAEL
37 granted patents·3 pending applications·199 citations·filing 2013–2022
96Inventor score
Top patents by PatentIndex Score
40 records- 0198US9858975B1Zero transistor transverse current bi-directional bitcellSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·37 cites·20 claims
- 0298US9711414B2Strained stacked nanosheet FETS and/or quantum well stacked nanosheetSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 18, 2017·32 cites·30 claims
- 0398US9461114B2Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the sameOBRADOVIC BORNA J·Filed 2015·Granted Oct 4, 2016·43 cites·20 claims
- 0497US9741811B2Integrated circuit devices including source/drain extension regions and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 22, 2017·21 cites·10 claims
- 0594US10878317B2Method and system for performing analog complex vector-matrix multiplicationSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 29, 2020·13 cites·19 claims
- 0692US10164121B2Stacked independently contacted field effect transistor having electrically separated first and second gatesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 25, 2018·8 cites·8 claims
- 0791US9123607B1Modified hybrid infrared focal plane array architecture for large scalingLOCKHEED CORP·Filed 2013·Granted Sep 1, 2015·8 cites·20 claims
- 0888US10790002B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 29, 2020·5 cites·17 claims
- 0985US11101320B2System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)SAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·1 cites·19 claims
- 1084US11461620B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 4, 2022·5 cites·14 claims
- 1184US10909449B2Monolithic multi-bit weight cell for neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 2, 2021·3 cites·20 claims
- 1284US10026751B2Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·4 cites·17 claims
- 1383US10585630B2Selectorless 3D stackable memorySAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 10, 2020·3 cites·16 claims
- 1480US9431529B2Confined semi-metal field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 30, 2016·3 cites·24 claims
- 1576US11769540B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·9 claims
- 1676US10679688B2Ferroelectric-based memory cell usable in on-logic chip memorySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 9, 2020·3 cites·20 claims
- 1776US10153368B2Unipolar complementary logicSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 11, 2018·2 cites·19 claims
- 1873US12379933B2Ultra pipelined accelerator for machine learning inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 5, 2025·1 cites·19 claims
- 1972US11727258B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·18 claims
- 2069US11348629B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 2168US12260324B2Monolithic multi-bit weight cell for neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 25, 2025·0 cites·17 claims
- 2268US10461751B2FE-FET-based XNOR cell usable in neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 29, 2019·1 cites·20 claims
- 2367US11574193B2Method and system for training of neural networks using continuously differentiable modelsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 7, 2023·1 cites·18 claims
- 2467US9614002B10T bi-directional memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 4, 2017·2 cites·20 claims
- 2562US10147793B2FinFET devices including recessed source/drain regions having optimized depthsOBRADOVIC BORNA J·Filed 2014·Granted Dec 4, 2018·1 cites·14 claims
- 2661US10614868B2Memory device with strong polarization couplingSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 7, 2020·1 cites·20 claims
- 2759US11556768B2Optimization of sparsified neural network layers for semi-digital crossbar architecturesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 2859US11475933B2Variation mitigation scheme for semi-digital mac array with a 2T-2 resistive memory element bitcellSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·18 claims
- 2959US10739186B2Bi-directional weight cellSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 11, 2020·1 cites·20 claims
- 3054US11182686B24T4R ternary weight cell with high on/off ratio backgroundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·20 claims
- 3153US11816563B2Method of enabling sparse neural networks on memresistive acceleratorsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 14, 2023·0 cites·20 claims
- 3250US11769043B2Batch size pipelined PIM accelerator for vision inference on multiple imagesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 26, 2023·0 cites·20 claims
- 3350US9525053B2Integrated circuit devices including strained channel regions and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 20, 2016·0 cites·20 claims
- 3448US11290110B2Method and system for providing a variation resistant magnetic junction-based XNOR cell usable in neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 29, 2022·0 cites·17 claims
- 3548US11217392B2Composite piezoelectric capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 4, 2022·0 cites·7 claims
- 3647US10872662B22T2R binary weight cell with high on/off ratio backgroundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·20 claims
- 3745US10832774B2Variation resistant 3T3R binary weight cell with low output current and high on/off ratioSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 3844US2019319108A1Mos device with strong polarization couplingSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 3941US2019026627A1Variable precision neuromorphic architectureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 4034US2016071729A1Rectangular nanosheet fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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