Inventor · disambiguated record
David Alan Lilienfeld
Also filed as: LILIENFELD DAVID · LILIENFELD DAVID ALAN
21 granted patents·40 citations·filing 2012–2022
92Inventor score
Top patents by PatentIndex Score
21 records- 0195US9704949B1Active area designs for charge-balanced diodesGEN ELECTRIC·Filed 2016·Granted Jul 11, 2017·14 cites·21 claims
- 0287US10243039B2Super-junction semiconductor power devices with fast switching capabilityGEN ELECTRIC·Filed 2016·Granted Mar 26, 2019·5 cites·12 claims
- 0383US10014388B1Transient voltage suppression devices with symmetric breakdown characteristicsGEN ELECTRIC·Filed 2017·Granted Jul 3, 2018·4 cites·14 claims
- 0482US11056586B2Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2018·Granted Jul 6, 2021·3 cites·21 claims
- 0580US10586846B2System and method for edge termination of super-junction (SJ) devicesGEN ELECTRIC·Filed 2018·Granted Mar 10, 2020·2 cites·13 claims
- 0678US11233157B2Systems and methods for unipolar charge balanced semiconductor power devicesGEN ELECTRIC·Filed 2018·Granted Jan 25, 2022·2 cites·22 claims
- 0778US10600649B2Systems and method for charge balanced semiconductor power devices with fast switching capabilityGEN ELECTRIC·Filed 2018·Granted Mar 24, 2020·2 cites·25 claims
- 0878US10002920B1System and method for edge termination of super-junction (SJ) devicesGEN ELECTRIC·Filed 2016·Granted Jun 19, 2018·2 cites·16 claims
- 0976US11764257B2Systems and methods for junction termination of wide band gap super-junction power devicesGEN ELECTRIC·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 1074US9257283B2Device having reduced bias temperature instability (BTI)MICHAEL JOSEPH DARRYL·Filed 2012·Granted Feb 9, 2016·5 cites·2 claims
- 1165US11271076B2Systems and methods for junction termination in semiconductor devicesGEN ELECTRIC·Filed 2019·Granted Mar 8, 2022·0 cites·20 claims
- 1265US11245003B2Systems and methods for junction termination of wide band gap super-junction power devicesGEN ELECTRIC·Filed 2019·Granted Feb 8, 2022·0 cites·21 claims
- 1364US12191384B2Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 1464US10957759B2Systems and methods for termination in silicon carbide charge balance power devicesGEN ELECTRIC·Filed 2018·Granted Mar 23, 2021·0 cites·16 claims
- 1564US10541338B2Edge termination designs for silicon carbide super-junction power devicesGEN ELECTRIC·Filed 2015·Granted Jan 21, 2020·1 cites·27 claims
- 1656US11417759B2Semiconductor device and method for reduced bias threshold instabilityGEN ELECTRIC·Filed 2019·Granted Aug 16, 2022·0 cites·18 claims
- 1749US10608079B2High energy ion implantation for junction isolation in silicon carbide devicesGEN ELECTRIC·Filed 2018·Granted Mar 31, 2020·0 cites·26 claims
- 1846US10636660B2Super-junction semiconductor device fabricationGEN ELECTRIC·Filed 2018·Granted Apr 28, 2020·0 cites·24 claims
- 1943US11069772B2Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2018·Granted Jul 20, 2021·0 cites·14 claims
- 2040US10367089B2Semiconductor device and method for reduced bias threshold instabilityARTHUR STEPHEN DALEY·Filed 2012·Granted Jul 30, 2019·0 cites·15 claims
- 2140US10354871B2Sputtering system and method for forming a metal layer on a semiconductor deviceGEN ELECTRIC·Filed 2017·Granted Jul 16, 2019·0 cites·12 claims
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