Inventor · disambiguated record
Toshiharu Okamoto
Also filed as: OKAMOTO TOSHIHARU
21 granted patents·3 pending applications·500 citations·filing 1994–2014
96Inventor score
Files withNEC CORP7NEC ELECTRONICS CORP6NISSHIN SPINNING6OKAMOTO TOSHIHARU2RENESAS ELECTRONICS CORP2
Top patents by PatentIndex Score
24 records- 0192US5706165AElectric double-layer capacitorNISSHIN SPINNING·Filed 1994·Granted Jan 6, 1998·89 cites·14 claims
- 0291US7274248B2Booster circuit and semiconductor device having sameNEC ELECTRONICS CORP·Filed 2005·Granted Sep 25, 2007·28 cites·13 claims
- 0389US6154100ARing oscillator and delay circuit using low threshold voltage type MOSFETSNEC CORP·Filed 1999·Granted Nov 28, 2000·62 cites·12 claims
- 0485US8314649B1Semiconductor apparatusOKAMOTO TOSHIHARU·Filed 2012·Granted Nov 20, 2012·7 cites·7 claims
- 0585US6764624B2Method of producing fuel cell separator, fuel cell separator, and polymer electrolyte fuel cellNISSHIN SPINNING·Filed 2001·Granted Jul 20, 2004·22 cites·6 claims
- 0683US5786555APolarizable electrode for electric double-layer capacitor, and electric double-layer capacitor using said polarizable electrodeNISSHIN SPINNING·Filed 1996·Granted Jul 28, 1998·70 cites·11 claims
- 0780US8283969B2Semiconductor apparatusOKAMOTO TOSHIHARU·Filed 2010·Granted Oct 9, 2012·6 cites·18 claims
- 0879US6229379B1Generation of negative voltage using reference voltageNEC CORP·Filed 1998·Granted May 8, 2001·60 cites·11 claims
- 0973US5781489ASemiconductor storage deviceNEC CORP·Filed 1997·Granted Jul 14, 1998·35 cites·4 claims
- 1073US5646891AElectrically erasable and programmable read only memory device with erase verify circuit for exactly verifying erased state of memory cellsNEC CORP·Filed 1996·Granted Jul 8, 1997·34 cites·13 claims
- 1170US9230946B2Semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Jan 5, 2016·3 cites·8 claims
- 1260US7746161B2Semiconductor integrated circuit device having internal voltage generating circuitNEC ELECTRONICS CORP·Filed 2007·Granted Jun 29, 2010·4 cites·23 claims
- 1357US6436567B1Separator for fuel cellsNISSHIN SPINNING·Filed 1998·Granted Aug 20, 2002·21 cites·10 claims
- 1457US5446693ASemiconductor storage deviceNEC CORP·Filed 1994·Granted Aug 29, 1995·18 cites·4 claims
- 1554US5760630AInput protection circuit having load resistor implemented by p-channel MIS transistorNEC CORP·Filed 1996·Granted Jun 2, 1998·15 cites·2 claims
- 1653US9197227B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 24, 2015·0 cites·14 claims
- 1753US7446594B2Booster circuit including an oscillatorNEC ELECTRONICS CORP·Filed 2006·Granted Nov 4, 2008·3 cites·15 claims
- 1848US8760943B2Semiconductor apparatusFUNAKI TOSHIHIKO·Filed 2012·Granted Jun 24, 2014·1 cites·17 claims
- 1948US6601003B2Operating efficiency of a nonvolatile memoryNEC ELECTRONICS CORP·Filed 2001·Granted Jul 29, 2003·4 cites·9 claims
- 2047US2004146771A1Method of producing fuel cell separator, fuel separator, and polymer electrolyte fuel cellNISSHIN SPINNING·Filed 2004·Application pending·0 cites
- 2147US2008191990A1Driver and display method using the sameNEC ELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 2242US5838531APolarizable electrode for electric double-layer capacitor, and electric double-layer capacitor using polarizable electrodeNISSHIN SPINNING·Filed 1996·Granted Nov 17, 1998·10 cites·11 claims
- 2341US5726938ASemiconductor device provided with a level conversion means for enabling a connection between logic circuitsNEC CORP·Filed 1996·Granted Mar 10, 1998·8 cites·18 claims
- 2438US2009295774A1Semiconductor integrated circuit having internal voltage generating circuitNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
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