Inventor · disambiguated record
Michael A. Briere
Also filed as: BRIERE MICHAEL · BRIERE MICHAEL A
113 granted patents·25 pending applications·814 citations·filing 2002–2021
99Inventor score
Files withINT RECTIFIER CORP64BRIERE MICHAEL A41INFINEON TECHNOLOGIES AMERICAS CORP18PICOR CORP4MCDONALD TIM3
Top patents by PatentIndex Score
138 records- 0198US7915645B2Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating sameINT RECTIFIER CORP·Filed 2009·Granted Mar 29, 2011·70 cites·11 claims
- 0298US7863877B2Monolithically integrated III-nitride power converterINT RECTIFIER CORP·Filed 2007·Granted Jan 4, 2011·58 cites·29 claims
- 0396US8796738B2Group III-V device structure having a selectively reduced impurity concentrationBRIERE MICHAEL A·Filed 2012·Granted Aug 5, 2014·14 cites·18 claims
- 0496US8084785B2III-nitride power semiconductor device having a programmable gateBRIERE MICHAEL A·Filed 2007·Granted Dec 27, 2011·26 cites·20 claims
- 0595US9406674B2Integrated III-nitride D-mode HFET with cascoded pair half bridgeINT RECTIFIER CORP·Filed 2014·Granted Aug 2, 2016·20 cites·5 claims
- 0695US8183595B2Normally off III-nitride semiconductor device having a programmable gateBRIERE MICHAEL A·Filed 2006·Granted May 22, 2012·20 cites·20 claims
- 0794US8482035B2Enhancement mode III-nitride transistors with single gate Dielectric structureBRIERE MICHAEL A·Filed 2011·Granted Jul 9, 2013·12 cites·20 claims
- 0894US8148964B2Monolithic III-nitride power converterBRIERE MICHAEL A·Filed 2010·Granted Apr 3, 2012·13 cites·13 claims
- 0994US8063616B2Integrated III-nitride power converter circuitBAHRAMIAN HAMID TONY·Filed 2008·Granted Nov 22, 2011·38 cites·20 claims
- 1094US7902809B2DC/DC converter including a depletion mode power switchINT RECTIFIER CORP·Filed 2007·Granted Mar 8, 2011·49 cites·20 claims
- 1193US9087812B2Composite semiconductor device with integrated diodeBRIERE MICHAEL A·Filed 2012·Granted Jul 21, 2015·13 cites·25 claims
- 1292US8957454B2III-Nitride semiconductor structures with strain absorbing interlayer transition modulesBRIERE MICHAEL A·Filed 2012·Granted Feb 17, 2015·10 cites·36 claims
- 1392US8338861B2III-nitride semiconductor device with stepped gate trench and process for its manufactureBRIERE MICHAEL A·Filed 2008·Granted Dec 25, 2012·18 cites·16 claims
- 1492US7745849B2Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drainINT RECTIFIER CORP·Filed 2008·Granted Jun 29, 2010·21 cites·18 claims
- 1591US9793259B2Integrated semiconductor deviceBRIERE MICHAEL A·Filed 2012·Granted Oct 17, 2017·6 cites·8 claims
- 1691US8674670B2DC/DC converter with depletion-mode III-nitride switchesBRIERE MICHAEL A·Filed 2010·Granted Mar 18, 2014·11 cites·18 claims
- 1791US8399912B2III-nitride power device with solderable front metalCHEAH CHUAN·Filed 2011·Granted Mar 19, 2013·10 cites·20 claims
- 1891US7166898B2Flip chip FET devicePICOR CORP·Filed 2005·Granted Jan 23, 2007·19 cites·22 claims
- 1990US8557644B2Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor deviceBRIERE MICHAEL A·Filed 2011·Granted Oct 15, 2013·8 cites·20 claims
- 2090US8093597B2In situ dopant implantation and growth of a III-nitride semiconductor bodyBRIERE MICHAEL A·Filed 2010·Granted Jan 10, 2012·10 cites·20 claims
- 2190US7999288B2High voltage durability III-nitride semiconductor deviceINT RECTIFIER CORP·Filed 2009·Granted Aug 16, 2011·12 cites·18 claims
- 2288US8395132B2Ion implanting while growing a III-nitride layerBRIERE MICHAEL A·Filed 2008·Granted Mar 12, 2013·9 cites·13 claims
- 2388US8072202B2Gate driver in buck convertersYANG BO·Filed 2010·Granted Dec 6, 2011·13 cites·16 claims
- 2487US7348656B2Power semiconductor device with integrated passive componentINT RECTIFIER CORP·Filed 2006·Granted Mar 25, 2008·13 cites·13 claims
- 2586US9525052B2Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric bodyINT RECTIFIER CORP·Filed 2013·Granted Dec 20, 2016·8 cites·17 claims
- 2686US9281388B2Composite semiconductor device with a SOI substrate having an integrated diodeBRIERE MICHAEL A·Filed 2012·Granted Mar 8, 2016·8 cites·29 claims
- 2786US8866193B2Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor deviceINT RECTIFIER CORP·Filed 2013·Granted Oct 21, 2014·5 cites·19 claims
- 2886US6969909B2Flip chip FET deviceVLT INC·Filed 2002·Granted Nov 29, 2005·35 cites·23 claims
- 2985US9449899B2Semiconductor package with heat spreaderINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2013·Granted Sep 20, 2016·5 cites·10 claims
- 3085US8659030B2III-nitride heterojunction devices having a multilayer spacerBRIERE MICHAEL A·Filed 2012·Granted Feb 25, 2014·7 cites·30 claims
- 3185US7839131B2Gate driving scheme for depletion mode devices in buck convertersINT RECTIFIER CORP·Filed 2008·Granted Nov 23, 2010·21 cites·25 claims
- 3284US9184243B2Monolithic composite III-nitride transistor with high voltage group IV enable switchINT RECTIFIER CORP·Filed 2014·Granted Nov 10, 2015·6 cites·20 claims
- 3384US8981380B2Monolithic integration of silicon and group III-V devicesBRIERE MICHAEL A·Filed 2010·Granted Mar 17, 2015·7 cites·12 claims
- 3484US8809909B2High voltage III-nitride transistorBRIERE MICHAEL A·Filed 2011·Granted Aug 19, 2014·6 cites·5 claims
- 3583US9721791B2Method of fabricating III-nitride semiconductor diesINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Aug 1, 2017·2 cites·16 claims
- 3683US9490172B2Method for preventing delamination and cracks in group III-V wafersINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Nov 8, 2016·2 cites·16 claims
- 3783US8969881B2Power transistor having segmented gateINT RECTIFIER CORP·Filed 2013·Granted Mar 3, 2015·6 cites·19 claims
- 3883US8476885B2Monolithic group III-V power converterBRIERE MICHAEL A·Filed 2012·Granted Jul 2, 2013·4 cites·13 claims
- 3982US9343440B2Stacked composite device including a group III-V transistor and a group IV vertical transistorMCDONALD TIM·Filed 2012·Granted May 17, 2016·6 cites·20 claims
- 4082US9041067B2Integrated half-bridge circuit with low side and high side composite switchesINT RECTIFIER CORP·Filed 2014·Granted May 26, 2015·5 cites·20 claims
- 4182US8680579B2Individually controlled multiple III-nitride half bridgesBRIERE MICHAEL A·Filed 2008·Granted Mar 25, 2014·7 cites·11 claims
- 4280US8692219B2Method and apparatus for growing a III-nitride layerINT RECTIFIER CORP·Filed 2013·Granted Apr 8, 2014·3 cites·15 claims
- 4380US8530938B2Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating sameBRIERE MICHAEL A·Filed 2009·Granted Sep 10, 2013·6 cites·6 claims
- 4479US9343562B2Dual-gated group III-V merged transistorINT RECTIFIER CORP·Filed 2014·Granted May 17, 2016·4 cites·12 claims
- 4579US9281387B2High voltage durability III-nitride deviceINT RECTIFIER CORP·Filed 2014·Granted Mar 8, 2016·3 cites·16 claims
- 4679US8987833B2Stacked composite device including a group III-V transistor and a group IV lateral transistorMCDONALD TIM·Filed 2012·Granted Mar 24, 2015·5 cites·20 claims
- 4779US6898092B2EMI filter circuitPICOR CORP·Filed 2003·Granted May 24, 2005·42 cites·42 claims
- 4877US9362267B2Group III-V and group IV composite switchINT RECTIFIER CORP·Filed 2013·Granted Jun 7, 2016·4 cites·10 claims
- 4977US9219058B2Efficient high voltage switching circuits and monolithic integration of sameBRIERE MICHAEL A·Filed 2011·Granted Dec 22, 2015·4 cites·18 claims
- 5077US8988133B2Nested composite switchBRIERE MICHAEL A·Filed 2012·Granted Mar 24, 2015·4 cites·27 claims
Showing the top 50 of 138 patent records by PatentIndex Score.
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