Inventor · disambiguated record
Masaharu Oshima
Also filed as: OSHIMA MASAHARU
7 granted patents·4 pending applications·41 citations·filing 1982–2013
82Inventor score
Files withNAT INST OF ADVANCED IND SCIEN3SEMICONDUCTOR TECH ACAD RES CT2AKINAGA HIROYUKI1FUJIOKA HIROSHI1MYATA SEIZO1
Top patents by PatentIndex Score
11 records- 0166US9373849B2Carbon catalyst, method for producing carbon catalyst, fuel cell, electricity storage device, and use of carbon catalystMYATA SEIZO·Filed 2013·Granted Jun 21, 2016·1 cites·3 claims
- 0264US6613448B1Magnetoresistance effect film and method of forming sameNAT INST OF ADVANCED IND SCIEN·Filed 2000·Granted Sep 2, 2003·11 cites·4 claims
- 0363US4419213AOxygen sensing element formed as laminate of thin layers on substrate provided with heater and lead wiresNISSAN MOTOR·Filed 1982·Granted Dec 6, 1983·20 cites·7 claims
- 0461US6512811B2Evaluation method and evaluation apparatus for semiconductor deviceSEMICONDUCTOR TECH ACAD RES CT·Filed 2002·Granted Jan 28, 2003·4 cites·24 claims
- 0557US2011136036A1Carbon catalyst, method for producing carbon catalyst, fuel cell, electricity storage device, and use of carbon catalystUNIV GUNMA NAT UNIV CORP·Filed 2009·Application pending·0 cites
- 0643US7964924B2Magnetoresistance effect device and magnetism sensor using the sameNAT INST OF ADVANCED IND SCIEN·Filed 2002·Granted Jun 21, 2011·3 cites·17 claims
- 0743US7838439B2Method of manufacturing an insulating film containing hafniumSEMICONDUCTOR TECH ACAD RES CT·Filed 2008·Granted Nov 23, 2010·0 cites·16 claims
- 0841US6808740B2Magnetoresistance effect film and method of forming sameNAT INST OF ADVANCED IND SCIEN·Filed 2003·Granted Oct 26, 2004·2 cites·8 claims
- 0936US2007247901A1Mesoscopic Magnetic Body Having Circular Single Magnetic Domain Structure, its Production Method, and Magnetic Recording Device Using the SameAKINAGA HIROYUKI·Filed 2004·Application pending·0 cites
- 1036US2006145182A1Nitride semiconductor element and method for manufacturing thereofFUJIOKA HIROSHI·Filed 2004·Application pending·0 cites
- 1134US2002004254A1Method for producing p-type gallium nitride-based compound semiconductor, method for producing gallium nitride-based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting deviceSHOWA DENKO KK·Filed 2001·Application pending·0 cites
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