Inventor · disambiguated record
Han-Tzong Yuan
Also filed as: YUAN HAN T · YUAN HAN-TZONG
37 granted patents·1 pending application·1,900 citations·filing 1978–2000
98Inventor score
Files withTEXAS INSTRUMENTS INC33MORRIS FRANCIS J1TEXAS INSTURMENTS INC1TEXAS INTRUMENTS INC1US AIR FORCE1
Top patents by PatentIndex Score
38 records- 0195US5909110AIntegrated voltage regulator circuit with vertical transistorTEXAS INSTURMENTS INC·Filed 1997·Granted Jun 1, 1999·87 cites·20 claims
- 0294US5610085AMethod of making a vertical FET using epitaxial overgrowthTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 11, 1997·145 cites·6 claims
- 0394US5068756AIntegrated circuit composed of group III-V compound field effect and bipolar semiconductorsTEXAS INSTRUMENTS INC·Filed 1990·Granted Nov 26, 1991·110 cites·11 claims
- 0493US5231037AMethod of making a power VFET device using a p+ carbon doped gate layerTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 27, 1993·105 cites·14 claims
- 0593US5159700ASubstrate with optical communication systems between chips mounted thereon and monolithic integration of optical I/O on silicon substratesTEXAS INSTRUMENTS INC·Filed 1991·Granted Oct 27, 1992·124 cites·14 claims
- 0692US5889298AVertical JFET field effect transistorTEXAS INSTRUMENTS INC·Filed 1993·Granted Mar 30, 1999·130 cites·15 claims
- 0792US5407842AEnhanced performance bipolar transistor processTEXAS INTRUMENTS INC·Filed 1994·Granted Apr 18, 1995·88 cites·19 claims
- 0891US6509574B2Optocouplers having integrated organic light-emitting diodesTEXAS INSTRUMENTS INC·Filed 2000·Granted Jan 21, 2003·59 cites·14 claims
- 0991US5624860AVertical field effect transistor and methodTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 29, 1997·102 cites·4 claims
- 1091US5223449AMethod of making an integrated circuit composed of group III-V compound field effect and bipolar semiconductorsMORRIS FRANCIS J·Filed 1991·Granted Jun 29, 1993·107 cites·16 claims
- 1190US5468661AMethod of making power VFET deviceTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 21, 1995·88 cites·9 claims
- 1290US5369042AEnhanced performance bipolar transistor processTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 29, 1994·74 cites·19 claims
- 1390US5342795AMethod of fabricating power VFET gate-refillTEXAS INSTRUMENTS INC·Filed 1993·Granted Aug 30, 1994·81 cites·13 claims
- 1490US4597080AArchitecture and method for testing VLSI processorsTEXAS INSTRUMENTS INC·Filed 1983·Granted Jun 24, 1986·60 cites·1 claims
- 1585US6008519AVertical transistor and methodTEXAS INSTRUMENTS INC·Filed 1997·Granted Dec 28, 1999·73 cites·15 claims
- 1684US6627507B2Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applicationsTEXAS INSTRUMENTS INC·Filed 2000·Granted Sep 30, 2003·34 cites·12 claims
- 1782US5760479AFlip-chip die attachment for a high temperature die to substrate bondTEXAS INSTRUMENTS INC·Filed 1997·Granted Jun 2, 1998·67 cites·15 claims
- 1882US5009476ASemiconductor layer with optical communication between chips disposed thereinTEXAS INSTRUMENTS INC·Filed 1984·Granted Apr 23, 1991·48 cites·33 claims
- 1977US4400411ATechnique of silicon epitaxial refillUS AIR FORCE·Filed 1982·Granted Aug 23, 1983·42 cites·9 claims
- 2073US5822473AIntegrated microchip chemical sensorTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 13, 1998·39 cites·24 claims
- 2169US5065132AProgrammable resistor and an array of the sameTEXAS INSTRUMENTS INC·Filed 1990·Granted Nov 12, 1991·27 cites·31 claims
- 2267US5548141ABipolar transistor having a self emitter contact alignedTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 20, 1996·23 cites·10 claims
- 2365US6407441B1Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applicationsTEXAS INSTRUMENTS INC·Filed 1998·Granted Jun 18, 2002·26 cites·15 claims
- 2465US4573064AGaAs/GaAlAs Heterojunction bipolar integrated circuit devicesTEXAS INSTRUMENTS INC·Filed 1981·Granted Feb 25, 1986·28 cites·31 claims
- 2559US6297515B1Integrated acoustic thin film resonatorTEXAS INSTRUMENTS INC·Filed 1999·Granted Oct 2, 2001·14 cites·19 claims
- 2659US5214298AComplementary heterostructure field effect transistorsTEXAS INSTRUMENTS INC·Filed 1990·Granted May 25, 1993·17 cites·7 claims
- 2754US6284669B1Power transistor with silicided gate and contactsTEXAS INSTRUMENTS INC·Filed 1998·Granted Sep 4, 2001·16 cites·4 claims
- 2853US4202003AMESFET Semiconductor device and method of makingTEXAS INSTRUMENTS INC·Filed 1978·Granted May 6, 1980·13 cites·7 claims
- 2950US4672414APlanar heterojunction bipolar device and methodTEXAS INSTRUMENTS INC·Filed 1985·Granted Jun 9, 1987·20 cites·8 claims
- 3049US5097227AMicrowave oscillator position sensorTEXAS INSTRUMENTS INC·Filed 1990·Granted Mar 17, 1992·14 cites·12 claims
- 3145US5436181AMethod of self aligning an emitter contact in a heterojunction bipolar transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Jul 25, 1995·8 cites·15 claims
- 3240US5981969AMultiple peak resonant tunneling diodeTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 9, 1999·7 cites·15 claims
- 3337US4654960AMethod for fabricating GaAs bipolar integrated circuit devicesTEXAS INSTRUMENTS INC·Filed 1985·Granted Apr 7, 1987·9 cites·15 claims
- 3436US2002066904A1Solid-state relay having integrated organic light-emitting diodesFiled 2000·Application pending·0 cites
- 3535US5420052AMethod of fabricating a semiplanar heterojunction bipolar transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted May 30, 1995·4 cites·17 claims
- 3635US4956689AHigh speed gallium arsenide transistor and methodTEXAS INSTRUMENTS INC·Filed 1990·Granted Sep 11, 1990·7 cites·16 claims
- 3731US5290719AMethod of making complementary heterostructure field effect transistorsTEXAS INSTRUMENTS INC·Filed 1992·Granted Mar 1, 1994·1 cites·16 claims
- 3828US5053346AMethod for making a high speed gallium arsenide transistorTEXAS INSTRUMENTS INC·Filed 1990·Granted Oct 1, 1991·3 cites·12 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →