Inventor · disambiguated record
Koichiro Ishibashi
Also filed as: ISHIBASHI KOICHIRO
194 granted patents·10 pending applications·4,651 citations·filing 1986–2019
99Inventor score
Top patents by PatentIndex Score
204 records- 0199US7502275B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2006·Granted Mar 10, 2009·213 cites·10 claims
- 0298US6795332B2Semiconductor memory device with memory cells operated by boosted voltageHITACHI LTD·Filed 2002·Granted Sep 21, 2004·191 cites·13 claims
- 0398US6677649B2SRAM cells with two P-well structureHITACHI LTD·Filed 2000·Granted Jan 13, 2004·201 cites·7 claims
- 0498US6657911B2Semiconductor device with low power consumption memory circuitHITACHI LTD·Filed 2002·Granted Dec 2, 2003·111 cites·14 claims
- 0598US6466077B1Semiconductor integrated circuit device including a speed monitor circuit and a substrate bias controller responsive to the speed-monitor circuitHITACHI LTD·Filed 2000·Granted Oct 15, 2002·136 cites·18 claims
- 0698US5834851ASRAM having load transistor formed above driver transistorHITACHI LTD·Filed 1995·Granted Nov 10, 1998·235 cites·24 claims
- 0797US8218390B2Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltageNII KOJI·Filed 2011·Granted Jul 10, 2012·29 cites·4 claims
- 0897US6424015B1Semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Jul 23, 2002·97 cites·5 claims
- 0996US8009500B2Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltageRenesas Electronics Corportion·Filed 2009·Granted Aug 30, 2011·45 cites·13 claims
- 1096US6998674B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2005·Granted Feb 14, 2006·28 cites·6 claims
- 1196US6653890B2Well bias control circuitRENESAS TECH CORP·Filed 2002·Granted Nov 25, 2003·65 cites·9 claims
- 1296US6337593B1Semiconductor integrated circuitHITACHI LTD·Filed 2000·Granted Jan 8, 2002·78 cites·28 claims
- 1396US4992677AHigh speed MOSFET output buffer with low noiseHITACHI LTD·Filed 1989·Granted Feb 12, 1991·83 cites·9 claims
- 1495US9496028B2Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltageRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 15, 2016·12 cites·10 claims
- 1595US7272068B2Semiconductor deviceHITACHI LTD·Filed 2006·Granted Sep 18, 2007·23 cites·13 claims
- 1695US6867637B2Semiconductor integrated circuit device including a substrate bias controller and a current limiting circuitRENESAS TECH CORP·Filed 2004·Granted Mar 15, 2005·51 cites·16 claims
- 1795US5668770AStatic memory cell having independent data holding voltageHITACHI LTD·Filed 1996·Granted Sep 16, 1997·125 cites·50 claims
- 1894US7474584B2Semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Jan 6, 2009·18 cites·9 claims
- 1994US6774705B2Semiconductor integrated circuit device in which operating frequency, supply voltage and substrate bias voltage are controllable to reduce power consumptionRENESAS TECH CORP·Filed 2001·Granted Aug 10, 2004·49 cites·16 claims
- 2094US5239196ASRAM with dual word lines overlapping drive transistor gatesIKEDA SHUJI·Filed 1991·Granted Aug 24, 1993·101 cites·11 claims
- 2193US7964484B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2009·Granted Jun 21, 2011·14 cites·3 claims
- 2293US7961545B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Jun 14, 2011·14 cites·14 claims
- 2392US9218873B2Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltageRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 22, 2015·9 cites·4 claims
- 2492US8797791B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 5, 2014·7 cites·2 claims
- 2592US8630142B2Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltageNII KOJI·Filed 2012·Granted Jan 14, 2014·9 cites·4 claims
- 2692US7598796B2Semiconductor integrated circuit including charging pumpRENESAS TECH CORP·Filed 2007·Granted Oct 6, 2009·18 cites·5 claims
- 2792US6943613B2Semiconductor integrated circuit device in which operating frequency, supply voltage and substrate bias voltage are controllable to reduce power consumptionRENESAS TECH CORP·Filed 2004·Granted Sep 13, 2005·40 cites·9 claims
- 2892US6847252B1Semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2003·Granted Jan 25, 2005·44 cites·14 claims
- 2991US7646662B2Semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Jan 12, 2010·12 cites·10 claims
- 3091US6782499B2Semiconductor integrated circuit device, method of manufacturing the device, and computer readable mediumRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·47 cites·15 claims
- 3190US9214221B2Semiconductor device with logic circuit, SRAM circuit and standby stateRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 15, 2015·6 cites·8 claims
- 3290US7569881B2Semiconductor integrated circuit device with reduced leakage currentRENESAS TECH CORP·Filed 2008·Granted Aug 4, 2009·9 cites·18 claims
- 3390US7408231B2SRAM memory semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2005·Granted Aug 5, 2008·12 cites·20 claims
- 3490US7269780B2Power management for circuits with inactive state data save and restore scan chainMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 11, 2007·69 cites·4 claims
- 3590US6483374B1Semiconductor integrated circuitHITACHI LTD·Filed 1998·Granted Nov 19, 2002·48 cites·7 claims
- 3689US7589993B2Semiconductor memory device with memory cells operated by boosted voltageRENESAS TECH CORP·Filed 2008·Granted Sep 15, 2009·15 cites·7 claims
- 3789US7087942B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2005·Granted Aug 8, 2006·9 cites·12 claims
- 3889US6914803B2Low-power semiconductor memory deviceHITACHI LTD·Filed 2003·Granted Jul 5, 2005·25 cites·4 claims
- 3989US6091629AHigh speed semiconductor memory apparatus including circuitry to increase writing and reading speedHITACHI LTD·Filed 1997·Granted Jul 18, 2000·112 cites·24 claims
- 4088US7397282B2Semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2006·Granted Jul 8, 2008·10 cites·3 claims
- 4188US7099183B2Semiconductor deviceHITACHI LTD·Filed 2005·Granted Aug 29, 2006·10 cites·8 claims
- 4288US6496952B1Semiconductor integrated circuit device, method of manufacturing the device, and computer readable mediumHITACHI LTD·Filed 1999·Granted Dec 17, 2002·58 cites·9 claims
- 4388US6388936B2Static memory cell having independent data holding voltageHITACHI LTD·Filed 2001·Granted May 14, 2002·24 cites·8 claims
- 4487US8998491B2Linear actuatorISHIBASHI KOICHIRO·Filed 2012·Granted Apr 7, 2015·7 cites·12 claims
- 4587US7397693B2Semiconductor memory device with memory cells operated by boosted voltageRENESAS TECH CORP·Filed 2007·Granted Jul 8, 2008·13 cites·17 claims
- 4687US6864539B2Semiconductor integrated circuit device having body biasing circuit for generating forward well bias voltage of suitable level by using simple circuitrySEMICONDUCTOR TECH ACAD RES CT·Filed 2003·Granted Mar 8, 2005·44 cites·24 claims
- 4787US6778002B2Semiconductor integrated circuit device including a substrate bias controller and a current limiting circuitRENESAS TECH CORP·Filed 2002·Granted Aug 17, 2004·29 cites·14 claims
- 4887US6630857B2Semiconductor integrated circuit apparatusHITACHI LTD·Filed 2001·Granted Oct 7, 2003·26 cites·4 claims
- 4987US6518825B2Semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Feb 11, 2003·39 cites·10 claims
- 5087US5943284ASemiconductor memory deviceHITACHI LTD·Filed 1996·Granted Aug 24, 1999·50 cites·23 claims
Showing the top 50 of 204 patent records by PatentIndex Score.
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