Inventor · disambiguated record
Gerrit J. Leusink
Also filed as: LEUSINK GERRIT · LEUSINK GERRIT J · LEUSINK GERRIT JAN
52 granted patents·16 pending applications·2,265 citations·filing 1997–2024
98Inventor score
Top patents by PatentIndex Score
68 records- 0198US6368987B1Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactionsTOKYO ELECTRON LTD·Filed 2000·Granted Apr 9, 2002·642 cites·11 claims
- 0298US6274496B1Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturingTOKYO ELECTRON LTD·Filed 2000·Granted Aug 14, 2001·391 cites·36 claims
- 0398US6161500AApparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactionsTOKYO ELECTRON LTD·Filed 1997·Granted Dec 19, 2000·814 cites·30 claims
- 0497US10833078B2Semiconductor apparatus having stacked gates and method of manufacture thereofTOKYO ELECTRON LTD·Filed 2018·Granted Nov 10, 2020·34 cites·20 claims
- 0596US7772073B2Semiconductor device containing a buried threshold voltage adjustment layer and method of formingTOKYO ELECTRON LTD·Filed 2007·Granted Aug 10, 2010·35 cites·3 claims
- 0695US7459396B2Method for thin film deposition using multi-tray film precursor evaporation systemTOKYO ELECTRON LTD·Filed 2006·Granted Dec 2, 2008·25 cites·12 claims
- 0795US6417626B1Immersed inductively—coupled plasma sourceTOKYO ELECTRON LTD·Filed 2001·Granted Jul 9, 2002·64 cites·46 claims
- 0894US10378105B2Selective deposition with surface treatmentTOKYO ELECTRON LTD·Filed 2017·Granted Aug 13, 2019·12 cites·5 claims
- 0992US10068764B2Selective metal oxide deposition using a self-assembled monolayer surface pretreatmentTOKYO ELECTRON LTD·Filed 2017·Granted Sep 4, 2018·7 cites·20 claims
- 1091US7270848B2Method for increasing deposition rates of metal layers from metal-carbonyl precursorsIBM·Filed 2004·Granted Sep 18, 2007·45 cites·15 claims
- 1190US7708835B2Film precursor tray for use in a film precursor evaporation system and method of usingTOKYO ELECTRON LTD·Filed 2006·Granted May 4, 2010·12 cites·26 claims
- 1288US11024535B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2019·Granted Jun 1, 2021·4 cites·19 claims
- 1388US10453681B2Method of selective vertical growth of a dielectric material on a dielectric substrateTOKYO ELECTRON LTD·Filed 2018·Granted Oct 22, 2019·5 cites·20 claims
- 1488US6652711B2Inductively-coupled plasma processing systemTOKYO ELECTRON LTD·Filed 2001·Granted Nov 25, 2003·31 cites·29 claims
- 1587US10847424B2Method for forming a nanowire deviceTOKYO ELECTRON LTD·Filed 2019·Granted Nov 24, 2020·4 cites·20 claims
- 1684US11444082B2Semiconductor apparatus having stacked gates and method of manufacture thereofTOKYO ELECTRON LTD·Filed 2020·Granted Sep 13, 2022·1 cites·20 claims
- 1784US10014213B2Selective bottom-up metal feature filling for interconnectsTOKYO ELECTRON LTD·Filed 2016·Granted Jul 3, 2018·4 cites·16 claims
- 1883US7345184B2Method and system for refurbishing a metal carbonyl precursorTOKYO ELECTRON LTD·Filed 2005·Granted Mar 18, 2008·5 cites·11 claims
- 1982US10157784B2Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallizationTOKYO ELECTRON LTD·Filed 2017·Granted Dec 18, 2018·4 cites·18 claims
- 2082US9646898B2Methods for treating a substrate by optical projection of a correction pattern based on a detected spatial heat signature of the substrateTOKYO ELECTRON LTD·Filed 2014·Granted May 9, 2017·4 cites·10 claims
- 2180US11443953B2Method for forming and using stress-tuned silicon oxide films in semiconductor device patterningTOKYO ELECTRON LTD·Filed 2019·Granted Sep 13, 2022·2 cites·20 claims
- 2280US6626186B1Method for stabilizing the internal surface of a PECVD process chamberTOKYO ELECTRON LTD·Filed 2000·Granted Sep 30, 2003·19 cites·5 claims
- 2379US7484315B2Replaceable precursor tray for use in a multi-tray solid precursor delivery systemTOKYO ELECTRON LTD·Filed 2004·Granted Feb 3, 2009·18 cites·24 claims
- 2478US10217670B2Wrap-around contact integration schemeTOKYO ELECTRON LTD·Filed 2017·Granted Feb 26, 2019·2 cites·20 claims
- 2577US7638002B2Multi-tray film precursor evaporation system and thin film deposition system incorporating sameTOKYO ELECTRON LTD·Filed 2004·Granted Dec 29, 2009·14 cites·51 claims
- 2677US7488512B2Method for preparing solid precursor tray for use in solid precursor evaporation systemTOKYO ELECTRON LTD·Filed 2004·Granted Feb 10, 2009·15 cites·3 claims
- 2776US8334183B2Semiconductor device containing a buried threshold voltage adjustment layer and method of formingCLARK ROBERT D·Filed 2010·Granted Dec 18, 2012·3 cites·10 claims
- 2874US12341053B2System for backside deposition of a substrateTOKYO ELECTRON LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 2974US11170992B2Area selective deposition for cap layer formation in advanced contactsTOKYO ELECTRON LTD·Filed 2019·Granted Nov 9, 2021·1 cites·19 claims
- 3074US8197898B2Method and system for depositing a layer from light-induced vaporization of a solid precursorLEUSINK GERRIT J·Filed 2005·Granted Jun 12, 2012·3 cites·16 claims
- 3173US10056328B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2017·Granted Aug 21, 2018·1 cites·19 claims
- 3272US10923392B2Interconnect structure and method of forming the sameTOKYO ELECTRON LTD·Filed 2019·Granted Feb 16, 2021·1 cites·11 claims
- 3370US9711449B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2016·Granted Jul 18, 2017·1 cites·20 claims
- 3469US10580691B2Method of integrated circuit fabrication with dual metal power railTOKYO ELECTRON LTD·Filed 2018·Granted Mar 3, 2020·1 cites·19 claims
- 3568US7678421B2Method for increasing deposition rates of metal layers from metal-carbonyl precursorsTOKYO ELECTRON LTD·Filed 2007·Granted Mar 16, 2010·2 cites·24 claims
- 3667US12400963B2Conductive superlattice structures and methods of forming the sameTOKYO ELECTRON LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 3767US9735067B2Substrate tuning system and method using optical projectionTOKYO ELECTRON LTD·Filed 2014·Granted Aug 15, 2017·1 cites·9 claims
- 3867US7985680B2Method of forming aluminum-doped metal carbonitride gate electrodesTOKYO ELECTRON LTD·Filed 2008·Granted Jul 26, 2011·3 cites·20 claims
- 3967US6302057B1Apparatus and method for electrically isolating an electrode in a PECVD process chamberTOKYO ELECTRON LTD·Filed 1998·Granted Oct 16, 2001·34 cites·15 claims
- 4064US11621190B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 4163US12482667B2Thermal etching of rutheniumTOKYO ELECTRON LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 4261US2024387371A12-dimensional materials as barrier layers in metallization of semiconductor devices and methods of formingTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 4359US12406887B2Selective film formation using a self-assembled monolayerTOKYO ELECTRON LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 4457US2024363333A1Semiconductor Processing Using a Two-Dimensional PolymerTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 4556US12438006B2Metal hard mask integrationTOKYO ELECTRON LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 4656US2009087550A1Sequential flow deposition of a tungsten silicide gate electrode filmTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 4755US12237216B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2022·Granted Feb 25, 2025·0 cites·21 claims
- 4855US8785310B2Method of forming conformal metal silicide filmsHASEGAWA TOSHIO·Filed 2012·Granted Jul 22, 2014·1 cites·22 claims
- 4954US11908728B2System for backside deposition of a substrateTOKYO ELECTRON LTD·Filed 2018·Granted Feb 20, 2024·0 cites·20 claims
- 5054US11894240B2Semiconductor processing systems with in-situ electrical biasTOKYO ELECTRON LTD·Filed 2021·Granted Feb 6, 2024·0 cites·23 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →