Inventor · disambiguated record
Yves Campidelli
Also filed as: CAMPIDELLI YVES
22 granted patents·2 pending applications·496 citations·filing 1985–2017
95Inventor score
Files withFRANCE TELECOM7ST MICROELECTRONICS SA4ST MICROELECTRONICS CROLLES 23DUTARTRE DIDIER2ST MICROELECTRONICS CROLLES 2 SAS2
Top patents by PatentIndex Score
24 records- 0195US6537370B1Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtainedFRANCE TELECOM·Filed 1999·Granted Mar 25, 2003·158 cites·38 claims
- 0293US6117750AProcess for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectivelyFRANCE TELECOM·Filed 1998·Granted Sep 12, 2000·123 cites·18 claims
- 0392US10186605B1Cyclic epitaxy process to form air gap isolation for a bipolar transistorST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Granted Jan 22, 2019·15 cites·37 claims
- 0489US6429098B1Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtainedFRANCE TELECOM·Filed 2000·Granted Aug 6, 2002·42 cites·37 claims
- 0584US6399502B1Process for fabricating a planar heterostructureFRANCE TELECOM·Filed 2000·Granted Jun 4, 2002·31 cites·8 claims
- 0680US6596555B2Forming of quantum dotsST MICROELECTRONICS SA·Filed 2001·Granted Jul 22, 2003·27 cites·18 claims
- 0776US7547914B2Single-crystal layer on a dielectric layerST MICROELECTRONICS CROLLES 2·Filed 2007·Granted Jun 16, 2009·9 cites·17 claims
- 0871US6255149B1Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gateFRANCE TELECOM·Filed 1999·Granted Jul 3, 2001·30 cites·20 claims
- 0970US7879679B2Electronic component manufacturing methodST MICROELECTRONICS CROLLES 2·Filed 2008·Granted Feb 1, 2011·5 cites·8 claims
- 1067US7749817B2Single-crystal layer on a dielectric layerSTMICROELECTRONICS CROLLES SAS·Filed 2007·Granted Jul 6, 2010·5 cites·20 claims
- 1165US6690027B1Method for making a device comprising layers of planes of quantum dotsFRANCE TELECOM·Filed 2000·Granted Feb 10, 2004·10 cites·18 claims
- 1262US8975154B2Process for producing at least one deep trench isolationST MICROELECTRONICS CROLLES 2·Filed 2012·Granted Mar 10, 2015·2 cites·18 claims
- 1360US6372581B1Process for nitriding the gate oxide layer of a semiconductor device and device obtainedFRANCE TELECOM·Filed 1999·Granted Apr 16, 2002·19 cites·9 claims
- 1459US9412589B2Method for fabricating NMOS and PMOS transistors on a substrate of the SOI, in particular FDSOI, type and corresponding integrated circuitST MICROELECTRONICS CROLLES 2 SAS·Filed 2014·Granted Aug 9, 2016·1 cites·20 claims
- 1559US8178426B2Method for manufacturing a structure of semiconductor-on-insulator typeHALIMAOUI AOMAR·Filed 2008·Granted May 15, 2012·2 cites·27 claims
- 1657US7129563B2Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity materialST MICROELECTRONICS SA·Filed 2004·Granted Oct 31, 2006·8 cites·7 claims
- 1742US7884352B2Single-crystal semiconductor layer with heteroatomic macronetworkST MICROELECTRONICS SA·Filed 2004·Granted Feb 8, 2011·0 cites·16 claims
- 1842US2003221708A1Method of cleaning a semiconductor process chamberFiled 2002·Application pending·0 cites
- 1941US8263965B2Single-crystal semiconductor layer with heteroatomic macro-networkCAMPIDELLI YVES·Filed 2011·Granted Sep 11, 2012·0 cites·5 claims
- 2039US8603887B2Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germaniumDUTARTRE DIDIER·Filed 2012·Granted Dec 10, 2013·0 cites·12 claims
- 2138US7381267B2Heteroatomic single-crystal layersST MICROELECTRONICS SA·Filed 2004·Granted Jun 3, 2008·0 cites·7 claims
- 2236US2012252174A1Process for forming an epitaxial layer, in particular on the source and drain regions of fully-depleted transistorsDUTARTRE DIDIER·Filed 2012·Application pending·0 cites
- 2327US4847216AProcess for the deposition by epitaxy of a doped materialCENTRE NAT ETD TELECOMM·Filed 1988·Granted Jul 11, 1989·6 cites·10 claims
- 2419US4643914AProcess and apparatus for the growth of films of silicides of refractory metals and films obtained by this processARNAUD DAVITAYA FRANCOIS·Filed 1985·Granted Feb 17, 1987·3 cites·5 claims
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