Inventor · disambiguated record
Hun-Jan Tao
Also filed as: TAO HUN-JAN
142 granted patents·27 pending applications·4,158 citations·filing 1993–2014
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG151CHANG HONG-DYI2TSAI MING-HUAN2CHEN HUANG-MING1GRAND PLASTIC TECHNOLOGY CORP1
Top patents by PatentIndex Score
169 records- 0198US7354847B2Method of trimming technologyTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 8, 2008·528 cites·37 claims
- 0298US6265317B1Top corner rounding for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 24, 2001·249 cites·20 claims
- 0397US7402866B2Backside contacts for MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 22, 2008·63 cites·18 claims
- 0497US6037266AMethod for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcherTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·283 cites·16 claims
- 0595US6869868B2Method of fabricating a MOSFET device with metal containing gate structuresTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 22, 2005·134 cites·32 claims
- 0694US7378713B2Semiconductor devices with dual-metal gate structures and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 27, 2008·37 cites·26 claims
- 0794US6440863B1Plasma etch method for forming patterned oxygen containing plasma etchable layerTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 27, 2002·246 cites·15 claims
- 0894US6407002B1Partial resist free approach in contact etch to improve W-fillingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·83 cites·27 claims
- 0993US8008143B2Method to form a semiconductor device having gate dielectric layers of varying thicknessesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 30, 2011·22 cites·20 claims
- 1092US7824990B2Multi-metal-oxide high-K gate dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 2, 2010·25 cites·21 claims
- 1192US6720132B2Bi-layer photoresist dry development and reactive ion etch methodTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·46 cites·23 claims
- 1291US8202776B2Method for protecting a gate structure during contact formationCHANG HONG-DYI·Filed 2009·Granted Jun 19, 2012·20 cites·20 claims
- 1391US7579248B2Resolving pattern-loading issues of SiGe stressorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 25, 2009·22 cites·23 claims
- 1490US6025273AMethod for etching reliable small contact holes with improved profiles for semiconductor integrated circuits using a carbon doped hard maskTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 15, 2000·107 cites·22 claims
- 1589US9218974B2Sidewall free CESL for enlarging ILD gap-fill windowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·8 cites·20 claims
- 1689US8283222B2Method to form a semiconductor device having gate dielectric layers of varying thicknessHSU KUANG-YUAN·Filed 2011·Granted Oct 9, 2012·14 cites·20 claims
- 1789US7410854B2Method of making FUSI gate and resulting structureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 12, 2008·16 cites·20 claims
- 1889US7078351B2Photoresist intensive patterning and processingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 18, 2006·44 cites·7 claims
- 1988US7301645B2In-situ critical dimension measurementTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 27, 2007·14 cites·20 claims
- 2088US6331480B1Method to improve adhesion between an overlying oxide hard mask and an underlying low dielectric constant materialTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 18, 2001·95 cites·6 claims
- 2188US6174818B1Method of patterning narrow gate electrodeTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·77 cites·15 claims
- 2288US6040248AChemistry for etching organic low-k materialsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 21, 2000·92 cites·18 claims
- 2388US5981398AHard mask method for forming chlorine containing plasma etched layerTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Nov 9, 1999·92 cites·12 claims
- 2487US6867084B1Gate structure and method of forming the gate dielectric with mini-spacerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 15, 2005·31 cites·22 claims
- 2587US6498067B1Integrated approach for controlling top dielectric loss during spacer etchingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 24, 2002·51 cites·26 claims
- 2686US8497169B2Method for protecting a gate structure during contact formationCHANG HONG-DYI·Filed 2012·Granted Jul 30, 2013·7 cites·15 claims
- 2786US8372755B2Multilayer hard maskTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 12, 2013·9 cites·21 claims
- 2886US7465634B2Method of forming integrated circuit devices having n-MOSFET and p-MOSFET transistors with elevated and silicided source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 16, 2008·14 cites·20 claims
- 2986US7429769B2Recessed channel field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 30, 2008·11 cites·12 claims
- 3085US7109085B2Etching process to avoid polysilicon notchingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 19, 2006·10 cites·27 claims
- 3184US8648446B2Method for protecting a gate structure during contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 11, 2014·5 cites·20 claims
- 3284US6764903B1Dual hard mask layer patterning methodTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 20, 2004·32 cites·20 claims
- 3383US6794230B2Approach to improve line end shorteningTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 21, 2004·22 cites·19 claims
- 3482US7390753B2In-situ plasma treatment of advanced resists in fine pattern definitionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 24, 2008·9 cites·20 claims
- 3582US7172933B2Recessed polysilicon gate structure for a strained silicon MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 6, 2007·34 cites·14 claims
- 3682US7074727B2Process for improving dielectric properties in low-k organosilicate dielectric materialTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 11, 2006·17 cites·14 claims
- 3782US6242350B1Post gate etch cleaning process for self-aligned gate mosfetsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 5, 2001·68 cites·25 claims
- 3880US6828205B2Method using wet etching to trim a critical dimensionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 7, 2004·24 cites·19 claims
- 3980US6129091AMethod for cleaning silicon wafers with deep trenchesTAIWAN SEMICONDUCTOR MANFACTUR·Filed 1996·Granted Oct 10, 2000·61 cites·12 claims
- 4079US8970015B2Method for protecting a gate structure during contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·3 cites·20 claims
- 4179US8299508B2CMOS structure with multiple spacersHSIEH BOR CHIUAN·Filed 2010·Granted Oct 30, 2012·9 cites·20 claims
- 4279US7732878B2MOS devices with continuous contact etch stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 8, 2010·8 cites·9 claims
- 4379US6194128B1Method of dual damascene etchingTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 27, 2001·58 cites·48 claims
- 4479US5904566AReactive ion etch method for forming vias through nitrogenated silicon oxide layersTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 18, 1999·55 cites·6 claims
- 4578US7713380B2Method and apparatus for backside polymer reduction in dry-etch processTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 11, 2010·18 cites·11 claims
- 4678US7217663B2Via hole and trench structures and fabrication methods thereof and dual damascene structures and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 15, 2007·7 cites·14 claims
- 4778US6656796B2Multiple etch method for fabricating split gate field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 2, 2003·30 cites·14 claims
- 4878US6444566B1Method of making borderless contact having a sion buffer layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 3, 2002·22 cites·6 claims
- 4978US6183937B1Post photodevelopment isotropic radiation treatment method for forming patterned photoresist layer with attenuated linewidthTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 6, 2001·38 cites·7 claims
- 5077US7008878B2Plasma treatment and etching process for ultra-thin dielectric filmsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 7, 2006·18 cites·17 claims
Showing the top 50 of 169 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →