Inventor · disambiguated record
Takayuki Gomi
Also filed as: GOMI TAKAYUKI
30 granted patents·2 pending applications·628 citations·filing 1988–2013
98Inventor score
Top patents by PatentIndex Score
32 records- 0190US5912479AHeterojunction bipolar semiconductor deviceSONY CORP·Filed 1997·Granted Jun 15, 1999·89 cites·5 claims
- 0285US5846867AMethod of producing Si-Ge base heterojunction bipolar deviceSONY CORP·Filed 1996·Granted Dec 8, 1998·66 cites·5 claims
- 0383US5391503AMethod of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a maskSONY CORP·Filed 1992·Granted Feb 21, 1995·59 cites·4 claims
- 0479US5541124AMethod for making bipolar transistor having double polysilicon structureSONY CORP·Filed 1995·Granted Jul 30, 1996·39 cites·7 claims
- 0578US5163178ASemiconductor device having enhanced impurity concentration profileSONY CORP·Filed 1990·Granted Nov 10, 1992·47 cites·1 claims
- 0673US4844312AApparatus for controlling traverse position of running stripKITAMURA KIDEN KK·Filed 1988·Granted Jul 4, 1989·18 cites·12 claims
- 0772US5629217AMethod and apparatus for SOI transistorSONY CORP·Filed 1994·Granted May 13, 1997·20 cites·13 claims
- 0871US5010026AProcess for making bipolar transistorSONY CORP·Filed 1989·Granted Apr 23, 1991·29 cites·3 claims
- 0969US5643806AManufacturing method for making bipolar deviceSONY CORP·Filed 1995·Granted Jul 1, 1997·23 cites·9 claims
- 1064US5580797AMethod of making SOI TransistorSONY CORP·Filed 1994·Granted Dec 3, 1996·15 cites·12 claims
- 1164US5414291ASemiconductor device and process for fabricating the sameSONY CORP·Filed 1994·Granted May 9, 1995·20 cites·7 claims
- 1261US6977426B1Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrateSONY CORP·Filed 1997·Granted Dec 20, 2005·18 cites·14 claims
- 1361US5885880ABipolar transistor device and method for manufacturing the sameSONY CORP·Filed 1995·Granted Mar 23, 1999·17 cites·43 claims
- 1461US5622887AProcess for fabricating BiCMOS devices including passive devicesSONY CORP·Filed 1994·Granted Apr 22, 1997·18 cites·2 claims
- 1560US5548156AMethod and apparatus for SOI transistorSONY CORP·Filed 1995·Granted Aug 20, 1996·13 cites·19 claims
- 1659US6008524AIntegrated injection logic semiconductor deviceSONY CORP·Filed 1996·Granted Dec 28, 1999·16 cites·6 claims
- 1758US5389561AMethod for making SOI type bipolar transistorSONY CORP·Filed 1993·Granted Feb 14, 1995·18 cites·9 claims
- 1856US5861640AMesa bipolar transistor with sub base layerSONY CORP·Filed 1997·Granted Jan 19, 1999·16 cites·10 claims
- 1955US5786258AMethod of making an SOI transistorSONY CORP·Filed 1997·Granted Jul 28, 1998·10 cites·2 claims
- 2054US6222250B1Bipolar transistor device and method for manufacturing the sameSONY CORP·Filed 1998·Granted Apr 24, 2001·13 cites·6 claims
- 2151US5976940AMethod of making plurality of bipolar transistorsSONY CORP·Filed 1996·Granted Nov 2, 1999·11 cites·7 claims
- 2250US4994881ABipolar transistorSONY CORP·Filed 1989·Granted Feb 19, 1991·12 cites·4 claims
- 2349US5858850AProcess of fabricating integrated heterojunction bipolar device and MIS capacitorSONY CORP·Filed 1997·Granted Jan 12, 1999·11 cites·8 claims
- 2443US6034402ASemiconductor deviceSONY CORP·Filed 1998·Granted Mar 7, 2000·8 cites·16 claims
- 2540US5915186AMethod of manufacturing heterojunction bipolar device having Si1-x Gex baseSONY CORP·Filed 1997·Granted Jun 22, 1999·6 cites·10 claims
- 2638US5856228AManufacturing method for making bipolar device having double polysilicon structureSONY CORP·Filed 1996·Granted Jan 5, 1999·4 cites·31 claims
- 2738US5783472AMethod of making an SOI transistorSONY CORP·Filed 1997·Granted Jul 21, 1998·3 cites·2 claims
- 2837US2014042531A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2934US5893743AProcess of fabricating semiconductor deviceSONY CORP·Filed 1997·Granted Apr 13, 1999·3 cites·3 claims
- 3034US5830799AMethod for forming embedded diffusion layers using an alignment markSONY CORP·Filed 1996·Granted Nov 3, 1998·4 cites·8 claims
- 3133US6596600B1Integrated injection logic semiconductor device and method of fabricating the sameSONY CORP·Filed 1998·Granted Jul 22, 2003·2 cites·10 claims
- 3233US2014042530A1Semiconductor device and method of fabricating the sameCHO MIN-KWON·Filed 2013·Application pending·0 cites
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