Inventor · disambiguated record
Hiroyuki Miwa
Also filed as: MIWA HIROYUKI
37 granted patents·3 pending applications·709 citations·filing 1989–2023
98Inventor score
Top patents by PatentIndex Score
40 records- 0194US5583065AMethod of making a MOS semiconductor deviceSONY CORP·Filed 1995·Granted Dec 10, 1996·135 cites·9 claims
- 0283US5391503AMethod of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a maskSONY CORP·Filed 1992·Granted Feb 21, 1995·59 cites·4 claims
- 0379US5541124AMethod for making bipolar transistor having double polysilicon structureSONY CORP·Filed 1995·Granted Jul 30, 1996·39 cites·7 claims
- 0478US5163178ASemiconductor device having enhanced impurity concentration profileSONY CORP·Filed 1990·Granted Nov 10, 1992·47 cites·1 claims
- 0572US5629217AMethod and apparatus for SOI transistorSONY CORP·Filed 1994·Granted May 13, 1997·20 cites·13 claims
- 0669US5643806AManufacturing method for making bipolar deviceSONY CORP·Filed 1995·Granted Jul 1, 1997·23 cites·9 claims
- 0768US5232861AMethod of manufacturing semiconductor device including a bipolar transistorSONY CORP·Filed 1991·Granted Aug 3, 1993·28 cites·2 claims
- 0867US5352624ASOI type semiconductor device and manufacturing method thereforSONY CORP·Filed 1993·Granted Oct 4, 1994·28 cites·13 claims
- 0966US5416031AMethod of producing Bi-CMOS transistorsSONY CORP·Filed 1993·Granted May 16, 1995·22 cites·5 claims
- 1065US5187554ABipolar transistorSONY CORP·Filed 1991·Granted Feb 16, 1993·25 cites·1 claims
- 1164US5580797AMethod of making SOI TransistorSONY CORP·Filed 1994·Granted Dec 3, 1996·15 cites·12 claims
- 1264US5414291ASemiconductor device and process for fabricating the sameSONY CORP·Filed 1994·Granted May 9, 1995·20 cites·7 claims
- 1361US5666001ATransistor wherein the base area is covered with an insulating layer which is overlaid with a conductive film that might be polysilicon crystal or aluminumSONY CORP·Filed 1994·Granted Sep 9, 1997·17 cites·3 claims
- 1461US5622887AProcess for fabricating BiCMOS devices including passive devicesSONY CORP·Filed 1994·Granted Apr 22, 1997·18 cites·2 claims
- 1560US5548156AMethod and apparatus for SOI transistorSONY CORP·Filed 1995·Granted Aug 20, 1996·13 cites·19 claims
- 1660US5324672AManufacturing method for bipolar transistorSONY CORP·Filed 1992·Granted Jun 28, 1994·21 cites·2 claims
- 1759US6043552ASemiconductor device and method of manufacturing the semiconductor deviceSONY CORP·Filed 1997·Granted Mar 28, 2000·18 cites·10 claims
- 1859US5872381ASemiconductor device and its manufacturing methodSONY CORP·Filed 1997·Granted Feb 16, 1999·15 cites·7 claims
- 1957US5352617AMethod for manufacturing Bi-CMOS transistor devicesSONY CORP·Filed 1993·Granted Oct 4, 1994·17 cites·8 claims
- 2056US2025338563A1Laminate structure and thin film transistorIDEMITSU KOSAN CO·Filed 2023·Application pending·0 cites
- 2156US2025374609A1Laminate structure and thin film transistorIDEMITSU KOSAN CO·Filed 2023·Application pending·0 cites
- 2255US5786258AMethod of making an SOI transistorSONY CORP·Filed 1997·Granted Jul 28, 1998·10 cites·2 claims
- 2355US2025351458A1Laminate structure and thin film transistorIDEMITSU KOSAN CO·Filed 2023·Application pending·0 cites
- 2454US6043554ABipolar transistor and its manufacturing methodSONY CORP·Filed 1997·Granted Mar 28, 2000·15 cites·9 claims
- 2554US5686032AProcess of forming a gasket directly on workpiece, using a mold clamped to the workpieceTOYOTA MOTOR CO LTD·Filed 1994·Granted Nov 11, 1997·20 cites·4 claims
- 2651US5955775AStructure of complementary bipolar transistorsSONY CORP·Filed 1995·Granted Sep 21, 1999·11 cites·13 claims
- 2750US5641692AMethod for producing a Bi-MOS deviceSONY CORP·Filed 1995·Granted Jun 24, 1997·13 cites·10 claims
- 2849US6344384B2Method of production of semiconductor deviceSONY CORP·Filed 2001·Granted Feb 5, 2002·5 cites·9 claims
- 2947US6323075B1Method of fabricating semiconductor deviceSONY CORP·Filed 2000·Granted Nov 27, 2001·3 cites·20 claims
- 3047US6005284ASemiconductor device and its manufacturing methodSONY CORP·Filed 1997·Granted Dec 21, 1999·10 cites·14 claims
- 3143US4980748ASemiconductor device made with a trenching processSONY CORP·Filed 1989·Granted Dec 25, 1990·12 cites·2 claims
- 3242US6808999B2Method of making a bipolar transistor having a reduced base transit timeSONY CORP·Filed 2002·Granted Oct 26, 2004·1 cites·7 claims
- 3342US6265276B1Structure and fabrication of bipolar transistorSONY CORP·Filed 1999·Granted Jul 24, 2001·6 cites·13 claims
- 3441US6159784AMethod of producing semiconductor deviceSONY CORP·Filed 1999·Granted Dec 12, 2000·7 cites·10 claims
- 3538US5856228AManufacturing method for making bipolar device having double polysilicon structureSONY CORP·Filed 1996·Granted Jan 5, 1999·4 cites·31 claims
- 3638US5783472AMethod of making an SOI transistorSONY CORP·Filed 1997·Granted Jul 21, 1998·3 cites·2 claims
- 3735US6136634AMethod of manufacturing semiconductor resistorsSONY CORP·Filed 1998·Granted Oct 24, 2000·3 cites·2 claims
- 3835US5629219AMethod for making a complementary bipolar transistorSONY CORP·Filed 1995·Granted May 13, 1997·4 cites·5 claims
- 3932US5824589AMethod for forming bipolar transistor having a reduced base transit timeSONY CORP·Filed 1997·Granted Oct 20, 1998·2 cites·3 claims
- 4030US6548873B2Semiconductor device and manufacturing method of the sameSONY CORP·Filed 1999·Granted Apr 15, 2003·0 cites·13 claims
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