Inventor · disambiguated record
Katsuki Furukawa
Also filed as: FURUKAWA KATSUKI
30 granted patents·1,508 citations·filing 1984–2002
98Inventor score
Top patents by PatentIndex Score
30 records- 0196US4762806AProcess for producing a SiC semiconductor deviceSHARP KK·Filed 1984·Granted Aug 9, 1988·110 cites·7 claims
- 0295US5170231ASilicon carbide field-effect transistor with improved breakdown voltage and low leakage currentSHARP KK·Filed 1991·Granted Dec 8, 1992·134 cites·6 claims
- 0393US5184199ASilicon carbide semiconductor deviceSHARP KK·Filed 1990·Granted Feb 2, 1993·104 cites·7 claims
- 0490US6635901B2Semiconductor device including an InGaAIN layerSAWAKI NOBUHIKO·Filed 2001·Granted Oct 21, 2003·118 cites·10 claims
- 0590US5387804ALight emitting diodeSHARP KK·Filed 1992·Granted Feb 7, 1995·98 cites·3 claims
- 0689US5433167AMethod of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystalSHARP KK·Filed 1993·Granted Jul 18, 1995·59 cites·7 claims
- 0789US4990994AElectrode structure for silicon carbide semiconductorsSHARP KK·Filed 1989·Granted Feb 5, 1991·61 cites·5 claims
- 0888US5243204ASilicon carbide light emitting diode and a method for the sameSHARP KK·Filed 1991·Granted Sep 7, 1993·76 cites·12 claims
- 0988US5037502AProcess for producing a single-crystal substrate of silicon carbideSHARP KK·Filed 1984·Granted Aug 6, 1991·29 cites·15 claims
- 1087US4897149AMethod of fabricating single-crystal substrates of silicon carbideSHARP KK·Filed 1986·Granted Jan 30, 1990·34 cites·16 claims
- 1187US4897710ASemiconductor deviceSHARP KK·Filed 1987·Granted Jan 30, 1990·80 cites·14 claims
- 1284US5124779ASilicon carbide semiconductor device with ohmic electrode consisting of alloySHARP KK·Filed 1990·Granted Jun 23, 1992·53 cites·4 claims
- 1381US5693180ADry etching method for a gallium nitride type compound semiconductorSHARP KK·Filed 1996·Granted Dec 2, 1997·58 cites·9 claims
- 1481US5279701AMethod for the growth of silicon carbide single crystalsSHARP KK·Filed 1992·Granted Jan 18, 1994·35 cites·8 claims
- 1581US4623425AMethod of fabricating single-crystal substrates of silicon carbideSHARP KK·Filed 1984·Granted Nov 18, 1986·23 cites·13 claims
- 1678US5063421ASilicon carbide light emitting diode having a pn junctionSHARP KK·Filed 1989·Granted Nov 5, 1991·34 cites·3 claims
- 1777US6888867B2Semiconductor laser device and fabrication method thereofSHARP KK·Filed 2002·Granted May 3, 2005·14 cites·19 claims
- 1877US5230768AMethod for the production of SiC single crystals by using a specific substrate crystal orientationSHARP KK·Filed 1992·Granted Jul 27, 1993·41 cites·5 claims
- 1976US5804839AIII-V nitride compound semiconductor device and method for fabricating the sameSHARP KK·Filed 1996·Granted Sep 8, 1998·37 cites·4 claims
- 2076US5319220ASilicon carbide semiconductor deviceSHARP KK·Filed 1992·Granted Jun 7, 1994·40 cites·2 claims
- 2175US5135885AMethod of manufacturing silicon carbide fetsSHARP KK·Filed 1990·Granted Aug 4, 1992·38 cites·12 claims
- 2273US5229625ASchottky barrier gate type field effect transistorSHARP KK·Filed 1991·Granted Jul 20, 1993·50 cites·4 claims
- 2366US5216264ASilicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contactSHARP KK·Filed 1991·Granted Jun 1, 1993·25 cites·8 claims
- 2465US5030580AMethod for producing a silicon carbide semiconductor deviceSHARP KK·Filed 1990·Granted Jul 9, 1991·36 cites·6 claims
- 2565US4865659AHeteroepitaxial growth of SiC on SiSHARP KK·Filed 1987·Granted Sep 12, 1989·23 cites·7 claims
- 2664US5329141ALight emitting diodeSHARP KK·Filed 1992·Granted Jul 12, 1994·24 cites·14 claims
- 2763US5288365AMethod for growing a silicon carbide single crystalSHARP KK·Filed 1992·Granted Feb 22, 1994·14 cites·8 claims
- 2863US4966860AProcess for producing a SiC semiconductor deviceSHARP KK·Filed 1988·Granted Oct 30, 1990·23 cites·14 claims
- 2960US5049950AMIS structure photosensorSHARP KK·Filed 1990·Granted Sep 17, 1991·23 cites·6 claims
- 3052US5272107AManufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) deviceSHARP KK·Filed 1991·Granted Dec 21, 1993·14 cites·1 claims
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