Inventor · disambiguated record
Annie Baudrant
Also filed as: BAUDRANT ANNIE
3 granted patents·131 citations·filing 1984–1986
76Inventor score
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3 records- 0186US4593454AProcess for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidationEFCIS·Filed 1984·Granted Jun 10, 1986·61 cites·9 claims
- 0273US4780429AMethod of fabrication of MOS transistors having electrodes of metallic silicideEFCIS·Filed 1986·Granted Oct 25, 1988·49 cites·10 claims
- 0354US4714951AIntegrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metalFABRICATION DE CIRCUITS INTEGR·Filed 1986·Granted Dec 22, 1987·21 cites·7 claims
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