Inventor · disambiguated record
Mark T. Ramsbey
Also filed as: RAMSBEY MARK · RAMSBEY MARK T
159 granted patents·9 pending applications·4,284 citations·filing 1995–2020
99Inventor score
Files withADVANCED MICRO DEVICES INC118SPANSION LLC17CYPRESS SEMICONDUCTOR CORP14FASL LLC8ADESTO TECHNOLOGIES CORP2
Top patents by PatentIndex Score
168 records- 0199US6674138B1Use of high-k dielectric materials in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 6, 2004·490 cites·16 claims
- 0298US6803272B1Use of high-K dielectric material in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·149 cites·20 claims
- 0398US6642573B1Use of high-K dielectric material in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 4, 2003·253 cites·22 claims
- 0498US6541816B2Planar structure for non-volatile memory devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2003·126 cites·17 claims
- 0597US7115469B1Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) processSPANSION LLC·Filed 2004·Granted Oct 3, 2006·135 cites·20 claims
- 0696US7018868B1Disposable hard mask for memory bitline scalingADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·95 cites·19 claims
- 0796US6912163B2Memory device having high work function gate and method of erasing sameFASL LLC·Filed 2003·Granted Jun 28, 2005·168 cites·29 claims
- 0896US6468865B1Method of simultaneous formation of bitline isolation and periphery oxideADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 22, 2002·97 cites·30 claims
- 0996US6436768B1Source drain implant during ONO formation for improved isolation of SONOS devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 20, 2002·152 cites·22 claims
- 1095US6639271B1Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 28, 2003·99 cites·14 claims
- 1195US6555436B2Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·56 cites·13 claims
- 1294US6927145B1Bitline hard mask spacer flow for memory cell scalingADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 9, 2005·68 cites·17 claims
- 1394US6670241B1Semiconductor memory with deuterated materialsADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 30, 2003·79 cites·8 claims
- 1493US6630383B1Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 7, 2003·74 cites·21 claims
- 1593US6465306B1Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·46 cites·21 claims
- 1692US7033957B1ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devicesFASL LLC·Filed 2003·Granted Apr 25, 2006·62 cites·21 claims
- 1792US6630384B1Method of fabricating double densed core gates in sonos flash memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·57 cites·22 claims
- 1892US6566194B1Salicided gate for virtual ground arraysADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·53 cites·10 claims
- 1992US6440797B1Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·104 cites·20 claims
- 2090US10014380B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Jul 3, 2018·4 cites·14 claims
- 2190US6680509B1Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 20, 2004·80 cites·19 claims
- 2290US6653190B1Flash memory with controlled wordline widthADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 25, 2003·44 cites·20 claims
- 2390US6617215B1Memory wordline hard maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 9, 2003·47 cites·20 claims
- 2489US9368606B2Memory first process flow and deviceSPANSION LLC·Filed 2012·Granted Jun 14, 2016·9 cites·24 claims
- 2589US8049334B1Buried silicide local interconnect with sidewall spacers and method for making the sameADVANCED MICRO DEVICES INC·Filed 2010·Granted Nov 1, 2011·8 cites·20 claims
- 2689US6958511B1Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogenFASL LLC·Filed 2003·Granted Oct 25, 2005·52 cites·19 claims
- 2789US6653191B1Memory manufacturing process using bitline rapid thermal annealADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 25, 2003·40 cites·18 claims
- 2888US6794764B1Charge-trapping memory arrays resistant to damage from contact hole informationADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 21, 2004·48 cites·20 claims
- 2986US6707078B1Dummy wordline for erase and bitline leakageFASL LLC·Filed 2002·Granted Mar 16, 2004·39 cites·20 claims
- 3086US6645801B1Salicided gate for virtual ground arraysADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 11, 2003·46 cites·30 claims
- 3186US6479348B1Method of making memory wordline hard mask extensionADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 12, 2002·31 cites·20 claims
- 3286US6420752B1Semiconductor device with self-aligned contacts using a liner oxide layerADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 16, 2002·37 cites·7 claims
- 3385US7067377B1Recessed channel with separated ONO memory deviceFASL LLC·Filed 2004·Granted Jun 27, 2006·30 cites·18 claims
- 3485US7001814B1Laser thermal annealing methods for flash memory devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 21, 2006·31 cites·27 claims
- 3585US6884681B1Method of manufacturing a semiconductor memory with deuterated materialsFASL LLC·Filed 2003·Granted Apr 26, 2005·31 cites·10 claims
- 3684US6774432B1UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOLADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 10, 2004·31 cites·20 claims
- 3783US9917166B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Mar 13, 2018·3 cites·14 claims
- 3883US7414277B1Memory cell having combination raised source and drain and method of fabricating sameSPANSION LLC·Filed 2005·Granted Aug 19, 2008·8 cites·30 claims
- 3983US6770938B1Diode fabrication for ESD/EOS protectionADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 3, 2004·40 cites·6 claims
- 4082US6958272B2Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cellADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 25, 2005·27 cites·23 claims
- 4182US6861307B2Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 1, 2005·26 cites·20 claims
- 4281US9209197B2Memory gate landing pad made from dummy featuresSPANSION LLC·Filed 2012·Granted Dec 8, 2015·5 cites·15 claims
- 4381US6465303B1Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·22 cites·20 claims
- 4481US5933730AMethod of spacer formation and source protection after self-aligned source is formed and a device provided by such a methodADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 3, 1999·37 cites·7 claims
- 4580US6753570B1Memory device and method of makingADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 22, 2004·27 cites·19 claims
- 4680US6475847B1Method for forming a semiconductor device with self-aligned contacts using a liner oxide layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 5, 2002·26 cites·17 claims
- 4780US6001713AMethods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 14, 1999·48 cites·11 claims
- 4879US6783591B1Laser thermal annealing method for high dielectric constant gate oxide filmsADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 31, 2004·20 cites·15 claims
- 4979US5907781AProcess for fabricating an integrated circuit with a self-aligned contactADVANCED MICRO DEVICES INC·Filed 1998·Granted May 25, 1999·59 cites·20 claims
- 5078US8368219B2Buried silicide local interconnect with sidewall spacers and method for making the sameADVANCED MICRO DEVICES INC·Filed 2011·Granted Feb 5, 2013·3 cites·20 claims
Showing the top 50 of 168 patent records by PatentIndex Score.
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