Inventor · disambiguated record
Masaharu Yamaji
Also filed as: YAMAJI MASAHARU
50 granted patents·8 pending applications·84 citations·filing 2004–2025
97Inventor score
Top patents by PatentIndex Score
58 records- 0192US9412732B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Aug 9, 2016·10 cites·15 claims
- 0287US8841744B2Semiconductor apparatusIMAI TOMOHIRO·Filed 2012·Granted Sep 23, 2014·10 cites·20 claims
- 0385US10727180B2Resistive element and method of manufacturing the resistive elementFUJI ELECTRIC CO LTD·Filed 2018·Granted Jul 28, 2020·4 cites·17 claims
- 0480US10043872B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Aug 7, 2018·3 cites·21 claims
- 0580US8269305B2High-voltage semiconductor deviceYAMAJI MASAHARU·Filed 2010·Granted Sep 18, 2012·6 cites·10 claims
- 0679US8633563B2High-voltage integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted Jan 21, 2014·5 cites·7 claims
- 0777US9443966B2High breakdown voltage semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Sep 13, 2016·4 cites·15 claims
- 0877US8860172B2High voltage semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Oct 14, 2014·4 cites·15 claims
- 0975US10217765B2Semiconductor integrated circuitFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 26, 2019·2 cites·20 claims
- 1074US10217861B2High voltage integrated circuit with high voltage junction termination regionFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 26, 2019·2 cites·13 claims
- 1173US10547304B2Semiconductor integrated circuit for driving switching device with integrated negative voltage clamp diodeFUJI ELECTRIC CO LTD·Filed 2018·Granted Jan 28, 2020·2 cites·8 claims
- 1273US10135445B2Semiconductor integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Nov 20, 2018·2 cites·10 claims
- 1373US9608072B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Mar 28, 2017·2 cites·16 claims
- 1472US10002961B2Semiconductor device suppressing current leakage in a bootstrap diodeFUJI ELECTRIC CO LTD·Filed 2014·Granted Jun 19, 2018·3 cites·20 claims
- 1571US9136326B2Semiconductor device with increased ESD resistance and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2014·Granted Sep 15, 2015·2 cites·9 claims
- 1669US9762048B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Sep 12, 2017·1 cites·4 claims
- 1767US10367056B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 30, 2019·1 cites·15 claims
- 1867US10192870B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jan 29, 2019·1 cites·20 claims
- 1967US8507998B2Semiconductor deviceYAMAJI MASAHARU·Filed 2012·Granted Aug 13, 2013·2 cites·4 claims
- 2066US11146268B2High voltage integrated circuitFUJI ELECTRIC CO LTD·Filed 2019·Granted Oct 12, 2021·1 cites·6 claims
- 2166US10566412B2High voltage junction field effect transistor (JFET) with spiral voltage dividerFUJI ELECTRIC CO LTD·Filed 2016·Granted Feb 18, 2020·1 cites·10 claims
- 2266US9117797B2High-voltage semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2012·Granted Aug 25, 2015·2 cites·8 claims
- 2365US9773878B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2015·Granted Sep 26, 2017·1 cites·17 claims
- 2465US8368141B2High breakdown voltage semiconductor device and high voltage integrated circuitFUJI ELECTRIC CO LTD·Filed 2010·Granted Feb 5, 2013·2 cites·10 claims
- 2564US10396167B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Aug 27, 2019·1 cites·23 claims
- 2664US9711659B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Jul 18, 2017·1 cites·9 claims
- 2764US8674729B2High voltage semiconductor device and driving circuitYAMAJI MASAHARU·Filed 2010·Granted Mar 18, 2014·2 cites·22 claims
- 2863US8148785B2Semiconductor deviceYAMAJI MASAHARU·Filed 2008·Granted Apr 3, 2012·2 cites·2 claims
- 2962US12261117B2Semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2021·Granted Mar 25, 2025·0 cites·8 claims
- 3062US11233052B2Method of manufacturing semiconductor integrated circuitFUJI ELECTRIC CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·18 claims
- 3162US9293525B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Mar 22, 2016·1 cites·9 claims
- 3261US10566410B2High breakdown voltage passive elementFUJI ELECTRIC CO LTD·Filed 2019·Granted Feb 18, 2020·0 cites·4 claims
- 3361US9722019B2High voltage integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Aug 1, 2017·1 cites·10 claims
- 3460US2024234261A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 3560US2024234266A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 3659US8546889B2Semiconductor device and driving circuitYAMAJI MASAHARU·Filed 2011·Granted Oct 1, 2013·1 cites·20 claims
- 3758US12310099B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted May 20, 2025·0 cites·11 claims
- 3858US10224390B2High breakdown voltage passive element and high breakdown voltage passive element manufacturing methodFUJI ELECTRIC CO LTD·Filed 2018·Granted Mar 5, 2019·0 cites·7 claims
- 3958US8704328B2High-voltage integrated circuit deviceYAMAJI MASAHARU·Filed 2011·Granted Apr 22, 2014·1 cites·12 claims
- 4058US2025351497A1Semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 4156US2023187437A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Application pending·0 cites
- 4256US2023223401A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Application pending·0 cites
- 4355US10825812B2Semiconductor integrated circuitFUJI ELECTRIC CO LTD·Filed 2018·Granted Nov 3, 2020·0 cites·20 claims
- 4453US12302614B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted May 13, 2025·0 cites·18 claims
- 4552US11171201B2Semiconductor integrated circuit having a first buried layer and a second buried layerFUJI ELECTRIC CO LTD·Filed 2019·Granted Nov 9, 2021·0 cites·20 claims
- 4651US2024363620A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 4750US2016204188A1High breakdown voltage passive element and high breakdown voltage passive element manufacturing methodFUJI ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
- 4847US11189685B2Resistance element and manufacturing method of resistance elementFUJI ELECTRIC CO LTD·Filed 2019·Granted Nov 30, 2021·0 cites·3 claims
- 4947US9385125B2Semiconductor integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Jul 5, 2016·0 cites·14 claims
- 5047US7144781B2Manufacturing method of a semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2004·Granted Dec 5, 2006·1 cites·21 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →