Inventor · disambiguated record
Ha-Jin Lim
Also filed as: LIM HA-JIN
35 granted patents·7 pending applications·285 citations·filing 2005–2019
96Inventor score
Top patents by PatentIndex Score
42 records- 0198US7482677B2Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·88 cites·7 claims
- 0297US7651729B2Method of fabricating metal silicate layer using atomic layer deposition techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 26, 2010·61 cites·41 claims
- 0395US7547951B2Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 16, 2009·36 cites·15 claims
- 0493US9859392B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·9 cites·20 claims
- 0591US8476155B1Formation of a high-K crystalline dielectric compositionLIM HA-JIN·Filed 2010·Granted Jul 2, 2013·12 cites·17 claims
- 0690US7952118B2Semiconductor device having different metal gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 31, 2011·14 cites·8 claims
- 0788US11183525B2Image sensor including laser shield patternSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 23, 2021·2 cites·20 claims
- 0888US7829953B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 9, 2010·13 cites·11 claims
- 0985US7396777B2Method of fabricating high-k dielectric layer having reduced impuritySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 8, 2008·10 cites·32 claims
- 1083US7973309B2TEG pattern for detecting void in device isolation layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·8 cites·18 claims
- 1182US11152415B2Image sensor with separation pattern and image sensor module including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 19, 2021·4 cites·22 claims
- 1281US11257857B2Image sensors including photoelectric conversion devices, trench, supporter, and isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 22, 2022·1 cites·19 claims
- 1380US8502286B2Etch stop layers and methods of forming the sameLIM HA-JIN·Filed 2010·Granted Aug 6, 2013·6 cites·23 claims
- 1477US7615830B2Transistors with multilayered dielectric filmsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 10, 2009·5 cites·16 claims
- 1576US8563411B2Semiconductor devices having a diffusion barrier layer and methods of manufacturing the sameLIM HA-JIN·Filed 2011·Granted Oct 22, 2013·4 cites·20 claims
- 1673US9728463B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·2 cites·20 claims
- 1771US8013402B2Transistors with multilayered dielectric filmsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·3 cites·20 claims
- 1868US8963227B2Semiconductor devices having a diffusion barrier layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 24, 2015·2 cites·17 claims
- 1965US8877579B2Methods of manufacturing semiconductor devicesSONG MOON-KYUN·Filed 2012·Granted Nov 4, 2014·3 cites·4 claims
- 2057US10312341B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·0 cites·17 claims
- 2157US8557713B2Semiconductor devices and method of forming the sameLIM HA-JIN·Filed 2009·Granted Oct 15, 2013·0 cites·19 claims
- 2257US8227308B2Method of fabricating semiconductor integrated circuit deviceLIM HA-JIN·Filed 2009·Granted Jul 24, 2012·1 cites·11 claims
- 2356US8970014B2Semiconductor devices with dielectric layersSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 3, 2015·0 cites·15 claims
- 2455US9023718B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 5, 2015·0 cites·4 claims
- 2554US10854677B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 2654US8951853B1Method of forming semiconductor device using Si-H rich silicon nitride layerPARK PAN-KWI·Filed 2010·Granted Feb 10, 2015·1 cites·18 claims
- 2753US8975171B1Method of forming a high-k crystalline dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 10, 2015·0 cites·7 claims
- 2852US10276694B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 30, 2019·0 cites·11 claims
- 2951US8252674B2Transistors with multilayered dielectric films and methods of manufacturing such transistorsLIM HA-JIN·Filed 2011·Granted Aug 28, 2012·0 cites·27 claims
- 3050US9515186B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·0 cites·18 claims
- 3147US2011193181A1Semiconductor device having different metal gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
- 3246US8673747B2Method of fabricating semiconductor deviceDO JIN-HO·Filed 2011·Granted Mar 18, 2014·0 cites·4 claims
- 3346US7648874B2Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 19, 2010·0 cites·30 claims
- 3445US2008079086A1Semiconductor device and method of manufacturing the sameJUNG HYUNG-SUK·Filed 2007·Application pending·0 cites
- 3544US8455345B2Methods of forming gate structure and methods of manufacturing semiconductor device including the sameLIM HA-JIN·Filed 2011·Granted Jun 4, 2013·0 cites·20 claims
- 3644US7767512B2Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 3, 2010·0 cites·12 claims
- 3741US2007200160A1Semiconductor device and method of fabricating the sameJUNG HYUNG-SUK·Filed 2007·Application pending·0 cites
- 3839US2007023842A1Semiconductor devices having different gate dielectric layers and methods of manufacturing the sameJUNG HYUNG-SUK·Filed 2006·Application pending·0 cites
- 3938US8664111B2Method of patterning a semiconductor device with hard maskLIM HA-JIN·Filed 2011·Granted Mar 4, 2014·0 cites·8 claims
- 4036US2010171182A1Method of forming a semiconductor device having selective stress relaxation of etch stop layerSHIN DONG-SUK·Filed 2010·Application pending·0 cites
- 4136US2012034752A1Methods of forming a gate structure and methods of manufacturing a semiconductor device using the sameKIM WEON-HONG·Filed 2011·Application pending·0 cites
- 4235US2011306171A1Methods of fabricating semiconductor devices with differentially nitrided gate insulatorsLIM HA-JIN·Filed 2011·Application pending·0 cites
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