Inventor · disambiguated record
Byung-Sik Moon
Also filed as: MOON BYUNG-SIK
19 granted patents·1 pending application·110 citations·filing 1998–2014
94Inventor score
Top patents by PatentIndex Score
20 records- 0194US8743582B23D semiconductor deviceKANG UK-SONG·Filed 2011·Granted Jun 3, 2014·19 cites·36 claims
- 0291US8547763B2Memory cell, methods of manufacturing memory cell, and memory device having the sameSON JONG-PIL·Filed 2011·Granted Oct 1, 2013·14 cites·13 claims
- 0389US9245827B23D semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 26, 2016·9 cites·21 claims
- 0483US7307910B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 11, 2007·10 cites·19 claims
- 0577US8495437B2Semiconductor memory deviceSOHN KYO-MIN·Filed 2012·Granted Jul 23, 2013·6 cites·20 claims
- 0670US8482989B2Semiconductor device including fuse array and method of operation the sameSON JONG-PIL·Filed 2011·Granted Jul 9, 2013·4 cites·13 claims
- 0768US7477565B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 13, 2009·4 cites·5 claims
- 0865US8599635B2Fuse circuit and semiconductor memory device including the sameKIM JIN-HO·Filed 2011·Granted Dec 3, 2013·3 cites·18 claims
- 0965US8514648B2Anti-fuse, anti-fuse circuit including the same, and method of fabricating the anti-fuseSON JONG-PIL·Filed 2011·Granted Aug 20, 2013·2 cites·21 claims
- 1064US7245542B2Memory device having open bit line cell structure using burn-in testing scheme and method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 17, 2007·5 cites·11 claims
- 1163US7027339B2Memory device employing open bit line architecture for providing identical data topology on repaired memory cell block and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 11, 2006·5 cites·13 claims
- 1263US6151263AIntegrated circuit memory devices having data input and output lines extending along the column directionSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 21, 2000·19 cites·2 claims
- 1359US8848475B2Fuse circuit, fuse array, semiconductor memory device and method of manufacturing semiconductor deviceSON JONG-PIL·Filed 2011·Granted Sep 30, 2014·1 cites·16 claims
- 1459US7606090B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 20, 2009·2 cites·4 claims
- 1552US7692995B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 6, 2010·1 cites·2 claims
- 1649US6304500B1Integrated circuit memory devices having data input and output lines extending in the column direction, and circuits and methods for repairing faulty cellsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 16, 2001·5 cites·10 claims
- 1747US7898881B2Semiconductor memory device and data sensing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 1, 2011·1 cites·12 claims
- 1844US7609580B2Redundancy program circuit and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 27, 2009·0 cites·12 claims
- 1934US8045404B2Semiconductor memory device capable of preventing damage to a bitline during a data masking operationSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·0 cites·10 claims
- 2032US2013003477A1Semiconductor memory device including spare antifuse array and antifuse repair method of the semiconductor memory devicePARK JU-SEOP·Filed 2012·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →