Inventor · disambiguated record
Robert James Pascoe Lander
Also filed as: LANDER ROBERT · LANDER ROBERT J P · LANDER ROBERT JAMES · LANDER ROBERT JAMES PASCOE
21 granted patents·4 pending applications·109 citations·filing 2004–2015
94Inventor score
Files withNXP BV8TAIWAN SEMICONDUCTOR MFG4LANDER ROBERT J P3LANDER ROBERT JAMES PASCOE3KONINKL PHILIPS ELECTRONICS NV2
Top patents by PatentIndex Score
25 records- 0192US8368149B2Semidonductor device having stressed metal gate and methods of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 5, 2013·13 cites·20 claims
- 0289US8390387B2MEMS resonatorsLANDER ROBERT JAMES PASCOE·Filed 2011·Granted Mar 5, 2013·14 cites·20 claims
- 0388US8669822B2ResonatorLANDER ROBERT J P·Filed 2011·Granted Mar 11, 2014·7 cites·19 claims
- 0487US8779527B2FinFET drive strength modificationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 15, 2014·7 cites·20 claims
- 0586US8179201B2ResonatorLANDER ROBERT JAMES PASCOE·Filed 2010·Granted May 15, 2012·7 cites·12 claims
- 0685US8994112B2Fin field effect transistor (finFET)DOORNBOS GERBEN·Filed 2009·Granted Mar 31, 2015·11 cites·14 claims
- 0785US8283231B2finFET drive strength modificationMERELLE THOMAS·Filed 2009·Granted Oct 9, 2012·14 cites·16 claims
- 0883US8202768B2Method of fabricating a semiconductor deviceLANDER ROBERT JAMES PASCOE·Filed 2009·Granted Jun 19, 2012·9 cites·16 claims
- 0975US9793408B2Fin field effect transistor (FinFET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 17, 2017·2 cites·20 claims
- 1066US9048122B2FinFET drive strength modificationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 2, 2015·1 cites·20 claims
- 1166US8294534B2ResonatorVAN DER AVOORT CASPER·Filed 2010·Granted Oct 23, 2012·3 cites·14 claims
- 1265US9061889B2MEMS microphoneLANDER ROBERT J P·Filed 2011·Granted Jun 23, 2015·2 cites·11 claims
- 1363US7189648B2Method for reducing the contact resistance of the connection regions of a semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Mar 13, 2007·7 cites·18 claims
- 1460US8216894B2FinFET method and deviceLANDER ROBERT J P·Filed 2009·Granted Jul 10, 2012·2 cites·8 claims
- 1554US7326631B2Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one anotherNXP BV·Filed 2004·Granted Feb 5, 2008·6 cites·4 claims
- 1652US7320939B2Semiconductor device fabricated by a method of reducing the contact resistance of the connection regionsIMEC INTER UNI MICRO ELECTR·Filed 2006·Granted Jan 22, 2008·0 cites·20 claims
- 1752US7157337B2Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a methodKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Jan 2, 2007·4 cites·10 claims
- 1851US2015270272A1Finfet Drive Strength ModificationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Application pending·0 cites
- 1946US8841736B2Integrated circuit with MEMS element and manufacturing method thereofNXP BV·Filed 2013·Granted Sep 23, 2014·0 cites·15 claims
- 2044US2011163393A1Semiconductor device manufacturing method an integrated circuit comprising such a deviceNXP BV·Filed 2009·Application pending·0 cites
- 2143US9318997B2ResonatorNXP BV·Filed 2013·Granted Apr 19, 2016·0 cites·15 claims
- 2240US2009302390A1Method of manufacturing semiconductor device with different metallic gatesNXP BV·Filed 2006·Application pending·0 cites
- 2339US7763944B2Semiconductor device and method of manufacturing such a semiconductor deviceNXP BV·Filed 2005·Granted Jul 27, 2010·0 cites·10 claims
- 2439US2009302389A1Method of manufacturing semiconductor device with different metallic gatesNXP BV·Filed 2006·Application pending·0 cites
- 2538US9391147B2Substrate arrangementNXP BV·Filed 2015·Granted Jul 12, 2016·0 cites·14 claims
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