Inventor · disambiguated record
Neng-Hui Yang
Also filed as: YANG NENG H · YANG NENG-HUI
35 granted patents·8 pending applications·370 citations·filing 2000–2018
97Inventor score
Top patents by PatentIndex Score
43 records- 0195US9716165B1Field-effect transistor and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jul 25, 2017·15 cites·13 claims
- 0294US9673324B1MOS device with epitaxial structure associated with source/drain region and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 6, 2017·14 cites·20 claims
- 0394US6365527B1Method for depositing silicon carbide in semiconductor devicesUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 2, 2002·77 cites·13 claims
- 0492US9397214B1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 19, 2016·10 cites·10 claims
- 0592US6991991B2Method for preventing to form a spacer undercut in SEG pre-clean processUNITED MICROELECTRONICS CORP·Filed 2003·Granted Jan 31, 2006·67 cites·13 claims
- 0689US9722030B1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 1, 2017·6 cites·12 claims
- 0787US9859164B1Method for manufacturing finsUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 2, 2018·5 cites·11 claims
- 0887US6670715B2Bilayer silicon carbide based barrierUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 30, 2003·37 cites·18 claims
- 0985US6815770B1MOS transistor having reduced source/drain extension sheet resistanceUNITED MICROELECTRONICS CORP·Filed 2003·Granted Nov 9, 2004·37 cites·13 claims
- 1076US6429152B1Method of forming a thin film on a semiconductor waferUNITED MICROELECTRONICS CORP·Filed 2001·Granted Aug 6, 2002·18 cites·19 claims
- 1175US9748386B2Epitaxial structure of semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 29, 2017·2 cites·20 claims
- 1274US6943085B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2003·Granted Sep 13, 2005·14 cites·19 claims
- 1369US9530886B1Semiconductor device with epitaxial structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 27, 2016·1 cites·10 claims
- 1467US6653204B1Method of forming a shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 2003·Granted Nov 25, 2003·13 cites·11 claims
- 1567US6406978B1Method of removing silicon carbideUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jun 18, 2002·11 cites·20 claims
- 1666US9466480B2Cleaning process for oxideUNITED MICROELECTRONICS CORP·Filed 2014·Granted Oct 11, 2016·1 cites·20 claims
- 1765US9570578B2Gate and gate forming processUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 14, 2017·1 cites·12 claims
- 1863US7435658B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 14, 2008·1 cites·6 claims
- 1963US6893909B2Method of manufacturing metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2003·Granted May 17, 2005·8 cites·18 claims
- 2061US7071046B2Method of manufacturing a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jul 4, 2006·10 cites·32 claims
- 2161US6387813B1Method for stripping a low dielectric film with high carbon contentUNITED MICROELECTRONICS CORP·Filed 2000·Granted May 14, 2002·7 cites·9 claims
- 2259US10128366B2Field-effect transistorUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 13, 2018·0 cites·15 claims
- 2358US9929264B2Field-effect transistor and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 27, 2018·0 cites·9 claims
- 2455US9947588B1Method for manufacturing finsUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 17, 2018·0 cites·8 claims
- 2554US9633904B1Method for manufacturing semiconductor device with epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 25, 2017·0 cites·10 claims
- 2652US9966434B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 8, 2018·0 cites·8 claims
- 2752US6521545B1Method of a surface treatment on a fluorinated silicate glass filmUNITED MICROELECTRONICS CORP·Filed 2001·Granted Feb 18, 2003·5 cites·11 claims
- 2850US7306681B2Method of cleaning a semiconductor substrateUNITED MICROELECTRONICS CORP·Filed 2004·Granted Dec 11, 2007·3 cites·9 claims
- 2950US7060547B2Method for forming a junction region of a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jun 13, 2006·2 cites·25 claims
- 3049US6861104B2Method of enhancing adhesion strength of BSG film to silicon nitride filmUNITED MICROELECTRONICS CORP·Filed 2002·Granted Mar 1, 2005·2 cites·14 claims
- 3148US6827835B2Method for electroplated metal annealing processUNITED MICROELECTRONICS CORP·Filed 2002·Granted Dec 7, 2004·2 cites·23 claims
- 3247US6596652B2Method of fabricating low dielectric constant filmUNITED MICROELECTRONICS CORP·Filed 2001·Granted Jul 22, 2003·1 cites·13 claims
- 3345US11107689B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 31, 2021·0 cites·12 claims
- 3444US2008293213A1Method for preparing a shallow trench isolationPROMOS TECHNOLOGIES INC·Filed 2007·Application pending·0 cites
- 3543US9748147B1Method of fabricating epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 29, 2017·0 cites·10 claims
- 3640US2003159652A1Heating injection apparatus for vapor liquid delivery systemUNITED MICROELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 3739US2007231998A1Method for preparing a capacitor structure of a semiconductor memoryPROMOS TECHNOLOGIES INC·Filed 2006·Application pending·0 cites
- 3838US9966266B2Apparatus for semiconductor wafer treatment and semiconductor wafer treatmentUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 8, 2018·0 cites·10 claims
- 3938US2005130434A1Method of surface pretreatment before selective epitaxial growthUNITED MICROELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 4038US2006189167A1Method for fabricating silicon nitride filmWANG HSIANG-YING·Filed 2005·Application pending·0 cites
- 4136US2003085408A1Oxygen-doped silicon carbide etch stop layerFiled 2001·Application pending·0 cites
- 4236US2002177329A1Surface densification of low dielectric constant filmFiled 2001·Application pending·0 cites
- 4334US2017133460A1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
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