Inventor · disambiguated record
Shigeto Maegawa
Also filed as: MAEGAWA SHIGETO
71 granted patents·9 pending applications·2,441 citations·filing 1991–2009
99Inventor score
Files withMITSUBISHI ELECTRIC CORP44RENESAS TECH CORP32MAEGAWA SHIGETO1RENESAS ELECTRONICS CORP1RYODEN SEMICONDUCTOR SYST ENG1
Top patents by PatentIndex Score
80 records- 0198US5627390ASemiconductor device with columnsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 6, 1997·200 cites·8 claims
- 0298US5371397ASolid-state imaging array including focusing elementsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 6, 1994·257 cites·6 claims
- 0397US5994735ASemiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 30, 1999·178 cites·6 claims
- 0497US5578513AMethod of making a semiconductor device having a gate all around type of thin film transistorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 26, 1996·260 cites·13 claims
- 0596US6870226B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2003·Granted Mar 22, 2005·99 cites·8 claims
- 0695US6420751B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 16, 2002·73 cites·4 claims
- 0794US6882006B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2002·Granted Apr 19, 2005·60 cites·2 claims
- 0894US5780888ASemiconductor device with storage nodeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 14, 1998·94 cites·11 claims
- 0993US7541644B2Semiconductor device with effective heat-radiationRENESAS TECH CORP·Filed 2004·Granted Jun 2, 2009·71 cites·10 claims
- 1093US6693324B2Semiconductor device having a thin film transistor and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 17, 2004·118 cites·15 claims
- 1192US6150688ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 21, 2000·75 cites·17 claims
- 1292US6127209ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 3, 2000·73 cites·9 claims
- 1391US6303425B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 16, 2001·45 cites·15 claims
- 1489US7358555B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Apr 15, 2008·16 cites·22 claims
- 1589US6383860B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·36 cites·15 claims
- 1688US5583362AGate all around thin film transistorMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 10, 1996·96 cites·12 claims
- 1787US6492690B2Semiconductor device having control electrodes with different impurity concentrationsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 10, 2002·61 cites·10 claims
- 1887US6340829B1Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 22, 2002·64 cites·10 claims
- 1986US8350331B2Semiconductor device and manufacturing method for the sameRENESAS ELECTRONICS CORP·Filed 2007·Granted Jan 8, 2013·13 cites·4 claims
- 2084US7402865B2Semiconductor device including a contact connected to the body and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Jul 22, 2008·9 cites·10 claims
- 2184US5191399ASolid-state imaging device with improved photodetectorMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 2, 1993·58 cites·2 claims
- 2283US6548859B2MOS semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 15, 2003·27 cites·14 claims
- 2381US5440168AThin-film transistor with suppressed off-current and VthRYODEN SEMICONDUCTOR SYST ENG·Filed 1994·Granted Aug 8, 1995·40 cites·13 claims
- 2479US6414353B1TFT with partially depleted bodyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jul 2, 2002·42 cites·26 claims
- 2577US5998828ASemiconductor device having nitrogen introduced in its polysilicon gateMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 7, 1999·51 cites·15 claims
- 2676US8067804B2Semiconductor device having an SOI structure, manufacturing method thereof, and memory circuitMAEGAWA SHIGETO·Filed 2005·Granted Nov 29, 2011·9 cites·3 claims
- 2776US7193272B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Mar 20, 2007·4 cites·4 claims
- 2876US6426543B1Semiconductor device including high-frequency circuit with inductorMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 30, 2002·18 cites·4 claims
- 2975US7741679B2Semiconductor device, method of manufacturing same and method of designing sameRENESAS TECH CORP·Filed 2007·Granted Jun 22, 2010·4 cites·8 claims
- 3074US7303950B2Semiconductor device, method of manufacturing same and method of designing sameMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Dec 4, 2007·4 cites·8 claims
- 3174US5238864AMethod of making solid-state imaging deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 24, 1993·36 cites·4 claims
- 3271US7675122B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2007·Granted Mar 9, 2010·2 cites·27 claims
- 3371US7382026B2Semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Jun 3, 2008·2 cites·7 claims
- 3471US6841400B2Method of manufacturing semiconductor device having trench isolationRENESAS TECH CORP·Filed 2002·Granted Jan 11, 2005·13 cites·7 claims
- 3571US6727572B2Semiconductor device including high frequency circuit with inductorRENESAS TECH CORP·Filed 2003·Granted Apr 27, 2004·12 cites·7 claims
- 3670US7164172B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2005·Granted Jan 16, 2007·3 cites·12 claims
- 3769US6958266B2Semiconductor device, method of manufacturing same and method of designing sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Oct 25, 2005·10 cites·10 claims
- 3869US6953979B1Semiconductor device, method of manufacturing same and method of designing sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 11, 2005·20 cites·23 claims
- 3967US7271454B2Semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2004·Granted Sep 18, 2007·7 cites·24 claims
- 4067US5885858AMethod of manufacturing thin-film transistorMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 23, 1999·20 cites·6 claims
- 4166US6541841B2Semiconductor device including high frequency circuit with inductorMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Apr 1, 2003·10 cites·5 claims
- 4264US6869865B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Mar 22, 2005·9 cites·19 claims
- 4363US6646306B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 11, 2003·8 cites·10 claims
- 4462US6103556AThin-film transistor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 15, 2000·15 cites·2 claims
- 4561US7144764B2Method of manufacturing semiconductor device having trench isolationRENESAS TECH CORP·Filed 2004·Granted Dec 5, 2006·7 cites·3 claims
- 4659US7321152B2Thin-film transistor and method of fabricating the sameRENESAS TECH CORP·Filed 2006·Granted Jan 22, 2008·1 cites·4 claims
- 4758US7511342B2Semiconductor device having SOI structure and method for manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Mar 31, 2009·1 cites·10 claims
- 4858US6020610ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 1, 2000·15 cites·7 claims
- 4955US7723790B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted May 25, 2010·0 cites·8 claims
- 5054US6914307B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Jul 5, 2005·4 cites·8 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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