Inventor · disambiguated record
Helmut Tews
Also filed as: TEWS HELMUT · TEWS HELMUT H · TEWS HELMUT HORST
91 granted patents·9 pending applications·1,539 citations·filing 1988–2015
99Inventor score
Top patents by PatentIndex Score
100 records- 0195US7812424B2Moisture barrier capacitors in semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Oct 12, 2010·23 cites·21 claims
- 0294US6573137B1Single sided buried strapINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Jun 3, 2003·58 cites·12 claims
- 0394US6498061B2Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formationIBM·Filed 2000·Granted Dec 24, 2002·66 cites·11 claims
- 0492US6437381B1Semiconductor memory device with reduced orientation-dependent oxidation in trench structuresIBM·Filed 2000·Granted Aug 20, 2002·52 cites·13 claims
- 0592US5994722AImage display device that emits multicolored lightSIEMENS AG·Filed 1998·Granted Nov 30, 1999·182 cites·15 claims
- 0689US6451662B1Method of forming low-leakage on-chip capacitorIBM·Filed 2001·Granted Sep 17, 2002·47 cites·3 claims
- 0788US6967147B1Nitrogen implantation using a shadow effect to control gate oxide thickness in DRAM semiconductorINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 22, 2005·37 cites·4 claims
- 0888US6309924B1Method of forming self-limiting polysilicon LOCOS for DRAM cellIBM·Filed 2000·Granted Oct 30, 2001·34 cites·12 claims
- 0987US8138539B2Semiconductor devices and methods of manufacture thereofBARTH HANS-JOACHIM·Filed 2007·Granted Mar 20, 2012·14 cites·25 claims
- 1087US6555430B1Process flow for capacitance enhancement in a DRAM trenchIBM·Filed 2000·Granted Apr 29, 2003·44 cites·16 claims
- 1187US6426253B1Method of forming a vertically oriented device in an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 30, 2002·49 cites·27 claims
- 1286US7986023B2Semiconductor device with inductorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jul 26, 2011·15 cites·24 claims
- 1386US7777300B2Semiconductor device with capacitorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Aug 17, 2010·16 cites·52 claims
- 1486US6905944B2Sacrificial collar method for improved deep trench processingINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 14, 2005·34 cites·20 claims
- 1585US9786733B2Moisture barrier capacitors in semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 10, 2017·3 cites·18 claims
- 1685US7824993B2Field-effect transistor with local source/drain insulation and associated method of productionINFINEON TECHNOLOGIES AG·Filed 2009·Granted Nov 2, 2010·7 cites·10 claims
- 1785US7528453B2Field effect transistor with local source/drain insulation and associated method of productionINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 5, 2009·26 cites·7 claims
- 1885US6362040B1Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substratesINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 26, 2002·41 cites·31 claims
- 1984US6605838B1Process flow for thick isolation collar with reduced lengthIBM·Filed 2002·Granted Aug 12, 2003·39 cites·20 claims
- 2084US6437401B1Structure and method for improved isolation in trench storage cellsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·38 cites·24 claims
- 2184US6406970B1Buried strap formation without TTO depositionINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 18, 2002·28 cites·21 claims
- 2282US6335247B1Integrated circuit vertical trench device and method of forming thereofINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jan 1, 2002·25 cites·19 claims
- 2380US7943973B2Method for producing a field-effect transistor, field-effect transistor and integrated circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 17, 2011·6 cites·31 claims
- 2480US7635908B2Corresponding capacitor arrangement and method for making the sameINFINEON TECHNOLOGIES AG·Filed 2007·Granted Dec 22, 2009·7 cites·6 claims
- 2580US7405127B2Method for producing a vertical field effect transistorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jul 29, 2008·7 cites·10 claims
- 2680US6599798B2Method of preparing buried LOCOS collar in trench DRAMSINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 29, 2003·26 cites·11 claims
- 2779US6261972B1Dual gate oxide process for uniform oxide thicknessINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 17, 2001·27 cites·12 claims
- 2878US6358867B1Orientation independent oxidation of siliconINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 19, 2002·45 cites·22 claims
- 2977US6620724B1Low resistivity deep trench fill for DRAM and EDRAM applicationsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 16, 2003·23 cites·38 claims
- 3077US6458647B1Process flow for sacrificial collar with poly maskINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 1, 2002·22 cites·27 claims
- 3175US6723611B2Vertical hard maskIBM·Filed 2002·Granted Apr 20, 2004·18 cites·19 claims
- 3275US6670235B1Process flow for two-step collar in DRAM preparationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 30, 2003·16 cites·10 claims
- 3375US6534376B2Process flow for sacrificial collar scheme with vertical nitride maskINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 18, 2003·15 cites·27 claims
- 3474US9012297B2Methods of forming moisture barrier capacitors in semiconductor componentsBARTH HANS-JOACHIM·Filed 2010·Granted Apr 21, 2015·2 cites·23 claims
- 3574US6838334B1Method of fabricating a buried collarIBM·Filed 2003·Granted Jan 4, 2005·21 cites·10 claims
- 3674US6740595B2Etch process for recessing polysilicon in trench structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 25, 2004·16 cites·8 claims
- 3773US8946037B2Methods for producing a tunnel field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 3, 2015·2 cites·17 claims
- 3873US8278707B2Field effect transistors having a double gate structureFEHLHABER RODGER·Filed 2010·Granted Oct 2, 2012·4 cites·13 claims
- 3973US7767562B2Method of implanting using a shadow effectQIMONDA AG·Filed 2005·Granted Aug 3, 2010·3 cites·29 claims
- 4073US7157328B2Selective etching to increase trench surface areaIBM·Filed 2005·Granted Jan 2, 2007·4 cites·20 claims
- 4173US6486024B1Integrated circuit trench device with a dielectric collar stack, and method of forming thereofINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 26, 2002·14 cites·20 claims
- 4272US8003470B2Strained semiconductor device and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 23, 2011·4 cites·36 claims
- 4371US6537926B1Process for improving the thickness uniformity of a thin oxide layer in semiconductor wafer fabricationINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 25, 2003·12 cites·21 claims
- 4471US6348388B1Process for fabricating a uniform gate oxide of a vertical transistorIBM·Filed 2000·Granted Feb 19, 2002·12 cites·11 claims
- 4570US6605860B1Semiconductor structures and manufacturing methodsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Aug 12, 2003·10 cites·2 claims
- 4670US6579766B1Dual gate oxide process without critical resist and without N2 implantINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 17, 2003·16 cites·16 claims
- 4769US6853025B2Trench capacitor with buried strapINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 8, 2005·9 cites·13 claims
- 4869US6159874AMethod of forming a hemispherical grained capacitorINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Dec 12, 2000·28 cites·21 claims
- 4968US6544855B1Process flow for sacrificial collar with polysilicon voidINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 8, 2003·11 cites·21 claims
- 5066US6677197B2High aspect ratio PBL SiN barrier formationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 13, 2004·12 cites·20 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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