Inventor · disambiguated record
Frank Hintermaier
Also filed as: HINTERMAIER FRANK · HINTERMAIER FRANK S
33 granted patents·1 pending application·633 citations·filing 1997–2004
98Inventor score
Top patents by PatentIndex Score
34 records- 0191US6444264B2Method for liquid delivery CVD utilizing alkane and polyamine solvent compositionsADVANCED TECH MATERIALS·Filed 2001·Granted Sep 3, 2002·44 cites·31 claims
- 0283US6214105B1Alkane and polyamine solvent compositions for liquid delivery chemical vapor depositionADVANCED TECH MATERIALS·Filed 1998·Granted Apr 10, 2001·43 cites·19 claims
- 0382US7005303B2Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 2004·Granted Feb 28, 2006·27 cites·12 claims
- 0481US6438019B2Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltagesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·29 cites·12 claims
- 0581US6120846AMethod for the selective deposition of bismuth based ferroelectric thin films by chemical vapor depositionADVANCED TECH MATERIALS·Filed 1997·Granted Sep 19, 2000·65 cites·33 claims
- 0677US6787186B1Method of controlled chemical vapor deposition of a metal oxide ceramic layerADVANCED TECH MATERIALS·Filed 1998·Granted Sep 7, 2004·43 cites·64 claims
- 0777US6730523B2Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 2001·Granted May 4, 2004·17 cites·47 claims
- 0877US6010744AMethod for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin filmsADVANCED TECH MATERIALS·Filed 1997·Granted Jan 4, 2000·55 cites·45 claims
- 0976US6586348B2Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallizeINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 1, 2003·18 cites·3 claims
- 1073US6133051AAmorphously deposited metal oxide ceramic filmsADVANCED TECH MATERIALS·Filed 1998·Granted Oct 17, 2000·35 cites·62 claims
- 1169US6177135B1Low temperature CVD processes for preparing ferroelectric films using Bi amidesADVANCED TECH MATERIALS·Filed 1998·Granted Jan 23, 2001·34 cites·68 claims
- 1266US6303391B1Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devicesADVANCED TECH MATERIALS·Filed 1997·Granted Oct 16, 2001·27 cites·14 claims
- 1366US6204158B1Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrateADVANCED TECH MATERIALS·Filed 1998·Granted Mar 20, 2001·24 cites·14 claims
- 1465US6350643B1Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefromADVANCED TECH MATERIALS·Filed 1998·Granted Feb 26, 2002·29 cites·26 claims
- 1558US6527848B2Complex of an element of transition group IV or V for forming an improved precursor combinationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 4, 2003·3 cites·4 claims
- 1658US6100187AMethod of producing a barrier layer in a semiconductor bodySIEMENS AG·Filed 1998·Granted Aug 8, 2000·22 cites·11 claims
- 1757US6669857B2Process for etching bismuth-containing oxide filmsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 30, 2003·5 cites·30 claims
- 1856US6790676B2Method for producing a ferroelectric layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 14, 2004·7 cites·17 claims
- 1955US6730562B2Method of patterning ferroelectric layersINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 4, 2004·4 cites·36 claims
- 2053US6156673AProcess for producing a ceramic layerINFINEON TECHNOLOGIES AG·Filed 1998·Granted Dec 5, 2000·17 cites·8 claims
- 2150US6500489B1Low temperature CVD processes for preparing ferroelectric films using Bi alcoxidesADVANCED TECH MATERIALS·Filed 1998·Granted Dec 31, 2002·15 cites·77 claims
- 2249US6713797B1Textured Bi-based oxide ceramic filmsADVANCED TECH MATERIALS·Filed 1998·Granted Mar 30, 2004·12 cites·38 claims
- 2348US6495415B2Method for fabricating a patterned layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 17, 2002·3 cites·25 claims
- 2447US6180420B1Low temperature CVD processes for preparing ferroelectric films using Bi carboxylatesADVANCED TECH MATERIALS·Filed 1998·Granted Jan 30, 2001·12 cites·71 claims
- 2546US6605505B2Process for producing an integrated semiconductor memory configurationSIEMENS AG·Filed 2001·Granted Aug 12, 2003·2 cites·8 claims
- 2645US6037002AProcess for producing thin films of oxide ceramicSIEMENS AG·Filed 1998·Granted Mar 14, 2000·10 cites·3 claims
- 2742US6258153B1Device for the deposition of substancesSIEMENS AG·Filed 1999·Granted Jul 10, 2001·8 cites·12 claims
- 2841US6168988B1Method for producing barrier-free semiconductor memory configurationsINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jan 2, 2001·7 cites·11 claims
- 2938US6316802B1Easy to manufacture integrated semiconductor memory configuration with platinum electrodesINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 13, 2001·5 cites·9 claims
- 3037US2002090450A1Method for fabricating a precious-metal electrodeFiled 2001·Application pending·0 cites
- 3135US6297526B1Process for producing barrier-free semiconductor memory configurationsSIEMENS AG·Filed 1999·Granted Oct 2, 2001·3 cites·6 claims
- 3235US6126998AProcess for producing a ceramic layer containing BiSIEMENS AG·Filed 1998·Granted Oct 3, 2000·4 cites·11 claims
- 3333US6693318B1Reduced diffusion of a mobile specie from a metal oxide ceramicINFINEON TECHNOLOGIES CORP·Filed 1998·Granted Feb 17, 2004·3 cites·6 claims
- 3432US7122856B1Capacitor having a barrier layer made of a transition metal phosphide, arsenide or sulfideINFINEON TECHNOLOGIES AG·Filed 1998·Granted Oct 17, 2006·1 cites·12 claims
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