Inventor · disambiguated record
Hideshi Miyajima
Also filed as: MIYAJIMA HIDESHI
36 granted patents·8 pending applications·1,252 citations·filing 1993–2020
98Inventor score
Top patents by PatentIndex Score
44 records- 0199US7842518B2Method for fabricating semiconductor deviceTOSHIBA KK·Filed 2007·Granted Nov 30, 2010·535 cites·19 claims
- 0293US5731634ASemiconductor device having a metal film formed in a groove in an insulating filmTOSHIBA KK·Filed 1996·Granted Mar 24, 1998·102 cites·14 claims
- 0391US7999356B2Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor deviceTOSHIBA KK·Filed 2009·Granted Aug 16, 2011·11 cites·14 claims
- 0490US7329601B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Granted Feb 12, 2008·21 cites·19 claims
- 0590US6344420B1Plasma processing method and plasma processing apparatusTOSHIBA KK·Filed 2000·Granted Feb 5, 2002·44 cites·11 claims
- 0686US6164295ACVD apparatus with high throughput and cleaning method thereforTOSHIBA KK·Filed 1997·Granted Dec 26, 2000·79 cites·13 claims
- 0785US5851842AMeasurement system and measurement methodTOSHIBA KK·Filed 1997·Granted Dec 22, 1998·86 cites·22 claims
- 0884US6051508AManufacturing method of semiconductor deviceTOSHIBA KK·Filed 1998·Granted Apr 18, 2000·81 cites·9 claims
- 0982US7795142B2Method for fabricating a semiconductor deviceTOSHIBA KK·Filed 2009·Granted Sep 14, 2010·8 cites·20 claims
- 1082US6746969B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2001·Granted Jun 8, 2004·27 cites·27 claims
- 1182US5424246AMethod of manufacturing semiconductor metal wiring layer by reduction of metal oxideTOSHIBA KK·Filed 1993·Granted Jun 13, 1995·52 cites·8 claims
- 1281US5561082AMethod for forming an electrode and/or wiring layer by reducing copper oxide or silver oxideTOSHIBA KK·Filed 1995·Granted Oct 1, 1996·44 cites·26 claims
- 1380US6534870B1Apparatus and method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2000·Granted Mar 18, 2003·32 cites·18 claims
- 1475US6558747B2Method of forming insulating film and process for producing semiconductor deviceTOSHIBA KK·Filed 2001·Granted May 6, 2003·19 cites·20 claims
- 1573US6703302B2Method of making a low dielectric insulation layerTOSHIBA KK·Filed 2002·Granted Mar 9, 2004·19 cites·16 claims
- 1673US6614096B2Method for manufacturing a semiconductor device and a semiconductor deviceTOSHIBA KK·Filed 2002·Granted Sep 2, 2003·15 cites·8 claims
- 1771US8822342B2Method to reduce depth delta between dense and wide features in dual damascene structuresSRIVASTAVA RAVI PRAKASH·Filed 2010·Granted Sep 2, 2014·3 cites·18 claims
- 1868US7154179B2Semiconductor deviceTOSHIBA KK·Filed 2005·Granted Dec 26, 2006·4 cites·8 claims
- 1965US7569498B2Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2008·Granted Aug 4, 2009·2 cites·20 claims
- 2062US8008190B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2008·Granted Aug 30, 2011·1 cites·5 claims
- 2162US7589014B2Semiconductor device having multiple wiring layers and method of producing the sameTOSHIBA KK·Filed 2006·Granted Sep 15, 2009·1 cites·6 claims
- 2261US11417626B2Manufacturing method of semiconductor deviceKIOXIA CORP·Filed 2020·Granted Aug 16, 2022·0 cites·19 claims
- 2359US6962870B2Method of manufacturing semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2004·Granted Nov 8, 2005·9 cites·16 claims
- 2457US7094681B2Semiconductor device fabrication methodTOSHIBA KK·Filed 2003·Granted Aug 22, 2006·5 cites·16 claims
- 2557US6436849B1Method for manufacturing semiconductor device having low dielectric constant insulating film, wafer processing equipment and wafer storing box used in this methodTOSHIBA KK·Filed 2001·Granted Aug 20, 2002·5 cites·9 claims
- 2657US6153509AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1999·Granted Nov 28, 2000·22 cites·5 claims
- 2756US7855141B2Semiconductor device having multiple wiring layers and method of producing the sameTOSHIBA KK·Filed 2009·Granted Dec 21, 2010·0 cites·6 claims
- 2856US7745326B2Semiconductor device having multiple wiring layers and method of producing the sameTOSHIBA KK·Filed 2009·Granted Jun 29, 2010·0 cites·8 claims
- 2954US6458713B1Method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2000·Granted Oct 1, 2002·5 cites·18 claims
- 3052US6737363B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2001·Granted May 18, 2004·3 cites·6 claims
- 3150US7129175B2Method of manufacturing semiconductor deviceSONY CORP·Filed 2003·Granted Oct 31, 2006·2 cites·20 claims
- 3250US6784092B2Method of forming insulating film and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2002·Granted Aug 31, 2004·2 cites·21 claims
- 3349US5885352AVapor phase processing apparatusTOSHIBA KK·Filed 1997·Granted Mar 23, 1999·12 cites·28 claims
- 3446US7462569B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Dec 9, 2008·0 cites·20 claims
- 3545US7199038B2Method for fabricating semiconductor deviceTOSHIBA KK·Filed 2004·Granted Apr 3, 2007·1 cites·20 claims
- 3642US7534717B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Granted May 19, 2009·0 cites·1 claims
- 3741US2005112877A1Method of manufacturing a semiconductor deviceFiled 2004·Application pending·0 cites
- 3840US2002187625A1Semiconductor device have multiple wiring layers and method of producing the sameTOSHIBA KK·Filed 2002·Application pending·0 cites
- 3939US2014054754A1Optically reactive maskingWATANABE TADAYOSHI·Filed 2012·Application pending·0 cites
- 4038US2013171819A1Methods for integration of metal/dielectric interconnectsMIYAJIMA HIDESHI·Filed 2011·Application pending·0 cites
- 4138US2003143847A1Method of forming low dielectric constant insulating layer and method of manufacturing semiconductor deviceFiled 2002·Application pending·0 cites
- 4238US2006199373A1Method of manufacturing semiconductor deviceMIYAJIMA HIDESHI·Filed 2006·Application pending·0 cites
- 4334US2014027914A1Protection of under-layer conductive pathwayTOMIZAWA HIDEYUKI·Filed 2012·Application pending·0 cites
- 4434US2012139033A1Semiconductor device and method of manufacturing the sameYAMASAKI HIROYUKI·Filed 2010·Application pending·0 cites
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