Inventor · disambiguated record
Yoshikazu Miyawaki
Also filed as: MIYAWAKI YOSHIKAZU
37 granted patents·1,781 citations·filing 1988–2012
98Inventor score
Top patents by PatentIndex Score
37 records- 0196US5745417AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 28, 1998·135 cites·26 claims
- 0295US5297096ANonvolatile semiconductor memory device and data erasing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 22, 1994·135 cites·55 claims
- 0394US5428568AElectrically erasable and programmable non-volatile memory device and a method of operating the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 27, 1995·120 cites·13 claims
- 0494US5363330ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 8, 1994·94 cites·6 claims
- 0594US4970727ASemiconductor integrated circuit having multiple self-test functions and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Nov 13, 1990·95 cites·8 claims
- 0693US6330192B1Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 11, 2001·74 cites·30 claims
- 0790US5371705AInternal voltage generator for a non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 6, 1994·76 cites·51 claims
- 0890US5347490ANonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Sep 13, 1994·77 cites·36 claims
- 0989US6385086B1Nonvolatile semiconductor memory device capable of high speed generation of rewrite voltageMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 7, 2002·54 cites·14 claims
- 1089US5898606AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 27, 1999·63 cites·2 claims
- 1188US5659505AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·67 cites·34 claims
- 1287US5283758ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 1, 1994·67 cites·17 claims
- 1385US5233610ASemiconductor memory device having error correcting functionMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Aug 3, 1993·109 cites·26 claims
- 1484US6243292B1Nonvolatile semiconductor memory device capable of reducing memory array areaMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 5, 2001·39 cites·8 claims
- 1583US6515908B2Nonvolatile semiconductor memory device having reduced erase time and method of erasing data of the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 4, 2003·37 cites·17 claims
- 1682US6567316B1Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 20, 2003·27 cites·8 claims
- 1782US5548557ANonvolatile semiconductor memory device with a row redundancy circuitMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 20, 1996·42 cites·39 claims
- 1880US6515900B2Non-volatile memory with background operation functionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 4, 2003·31 cites·11 claims
- 1980US6008674ASemiconductor integrated circuit device with adjustable high voltage detection circuitMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 28, 1999·46 cites·6 claims
- 2079US5602778ANonvolatile semiconductor memory device with a row redundancy circuitMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 11, 1997·39 cites·3 claims
- 2179US5132928ADivided word line type non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 21, 1992·78 cites·22 claims
- 2278US5544117ANon-volatile semiconductor memory device with improved collective erasing operationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 6, 1996·40 cites·26 claims
- 2377US5615149ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 25, 1997·28 cites·6 claims
- 2473US6388921B1Nonvolatile semiconductor memory device with improved reliability and operation speedMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 14, 2002·20 cites·17 claims
- 2573US5959890ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 28, 1999·33 cites·7 claims
- 2672US5402382ANonvolatile semiconductor memory device capable of erasing by a word line unitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 28, 1995·32 cites·24 claims
- 2770US5940283AHigh voltage generating device having variable boosting capability according to magnitude of loadMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 17, 1999·38 cites·17 claims
- 2869US6483748B2Nonvolatile memory with background operation functionMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 19, 2002·17 cites·12 claims
- 2962US8883636B2Process for semiconductor circuitWANG ZIH-SONG·Filed 2012·Granted Nov 11, 2014·2 cites·8 claims
- 3062US6466508B1Semiconductor memory device having high-speed read functionMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 15, 2002·12 cites·7 claims
- 3160US7002846B2Non-volatile semiconductor memory device with memory transistorRENESAS TECH CORP·Filed 2004·Granted Feb 21, 2006·13 cites·7 claims
- 3252US6473345B2Semiconductor memory device which can be simultaneously tested even when the number of semiconductor memory devices is large and semiconductor wafer on which the semiconductor memory devices are formedMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 29, 2002·7 cites·20 claims
- 3351US5563824ANonvolatile semiconductor memory device and method of erasing stored data thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 8, 1996·14 cites·7 claims
- 3449US6996006B2Semiconductor memory preventing unauthorized copyingRENESAS SOLUTIONS CORP·Filed 2004·Granted Feb 7, 2006·4 cites·4 claims
- 3545US5554868ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 10, 1996·10 cites·7 claims
- 3644US5521863ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 28, 1996·6 cites·6 claims
- 3730US5485421ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 16, 1996·0 cites·11 claims
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