Inventor · disambiguated record
Shigeru Kikuda
Also filed as: KIKUDA SHIGERU
21 granted patents·764 citations·filing 1988–2003
96Inventor score
Top patents by PatentIndex Score
21 records- 0192US6166415ASemiconductor device with improved noise resistivityMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 26, 2000·173 cites·8 claims
- 0292US5357478ASemiconductor integrated circuit device including a plurality of cell array blocksMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 18, 1994·97 cites·8 claims
- 0387US5574729ARedundancy circuit for repairing defective bits in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 12, 1996·63 cites·29 claims
- 0482US6962827B1Semiconductor device capable of shortening test time and suppressing increase in chip area, and method of manufacturing semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2003·Granted Nov 8, 2005·29 cites·10 claims
- 0582US6301169B1Semiconductor memory device with IO compression test modeMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 9, 2001·31 cites·10 claims
- 0682US5063313ADelay circuit employing different threshold fet'sMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 5, 1991·25 cites·20 claims
- 0780US4931668AMIS transistor driven inverter circuit capable of individually controlling rising portion and falling portion of output waveformMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jun 5, 1990·26 cites·6 claims
- 0878US5586076ASemiconductor memory device permitting high speed data transfer and high density integrationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 17, 1996·40 cites·19 claims
- 0978US5384784ASemiconductor memory device comprising a test circuit and a method of operation thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 24, 1995·42 cites·19 claims
- 1074US5146429ASemiconductor memory device including a redundancy circuitry for repairing a defective memory cell and a method for repairing a defective memory cellMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Sep 8, 1992·37 cites·12 claims
- 1170US5903575ASemiconductor memory device having fast data writing mode and method of writing testing data in fast data writing modeMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 11, 1999·32 cites·23 claims
- 1270US5519243ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 21, 1996·27 cites·44 claims
- 1366US5767929ALiquid crystal display apparatus with shorting ringADVANCED DISPLAY KK·Filed 1996·Granted Jun 16, 1998·37 cites·10 claims
- 1463US5323348ASemiconductor memory device having multiple memory arrays and including redundancy circuit for repairing a faulty bitMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 21, 1994·23 cites·9 claims
- 1563US5227997ASemiconductor circuit device having multiplex selection functionsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 13, 1993·22 cites·22 claims
- 1661US4879679ADynamic random access memory having storage gate electrode grounding meansMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Nov 7, 1989·17 cites·5 claims
- 1758US5448516ASemiconductor memory device suitable for high integrationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 5, 1995·18 cites·25 claims
- 1855US4994689ASemiconductor integrated circuit deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Feb 19, 1991·10 cites·4 claims
- 1953US4914326ADelay circuitMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 3, 1990·8 cites·9 claims
- 2035US6091651ASemiconductor memory device with improved test efficiencyMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 18, 2000·4 cites·11 claims
- 2132US5321654ASemiconductor device having no through current flow in standby periodMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 14, 1994·3 cites·17 claims
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