Inventor · disambiguated record
Mitsuya Kinoshita
Also filed as: KINOSHITA MITSUYA
31 granted patents·874 citations·filing 1989–2011
98Inventor score
Top patents by PatentIndex Score
31 records- 0193US6064621AMulti-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangementMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 16, 2000·103 cites·19 claims
- 0292US5357478ASemiconductor integrated circuit device including a plurality of cell array blocksMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 18, 1994·97 cites·8 claims
- 0391US7007215B2Test circuit capable of testing embedded memory with reliabilityRENESAS TECH CORP·Filed 2002·Granted Feb 28, 2006·46 cites·12 claims
- 0488US4965767AAssociative memory having simplified memory cell circuitryMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Oct 23, 1990·55 cites·9 claims
- 0587US5914907ASemiconductor memory device capable of increasing chip yields while maintaining rapid operationMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 22, 1999·69 cites·8 claims
- 0687US5574729ARedundancy circuit for repairing defective bits in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 12, 1996·63 cites·29 claims
- 0781US6407538B1Voltage down converter allowing supply of stable internal power supply voltageMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 18, 2002·30 cites·8 claims
- 0878US6084386AVoltage generation circuit capable of supplying stable power supply voltage to load operating in response to timing signalMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jul 4, 2000·34 cites·18 claims
- 0978US5384784ASemiconductor memory device comprising a test circuit and a method of operation thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 24, 1995·42 cites·19 claims
- 1077US6072743AHigh speed operable semiconductor memory device with memory blocks arranged about the centerMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 6, 2000·35 cites·7 claims
- 1175US6586329B1Semiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 1, 2003·20 cites·41 claims
- 1273US6215720B1High speed operable semiconductor memory device with memory blocks arranged about the centerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 10, 2001·18 cites·7 claims
- 1372US5448512ASemiconductor memory device with contact region intermediate memory cell and peripheral circuitMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Sep 5, 1995·26 cites·13 claims
- 1469US4974053ASemiconductor device for multiple packaging configurationsMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 27, 1990·34 cites·5 claims
- 1568US6272034B1Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 7, 2001·16 cites·4 claims
- 1666US5580813AMethod of forming a semiconductor memory device having a contact region between memory cell and an interlayer insolating layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 3, 1996·20 cites·5 claims
- 1765US8581302B2Semiconductor device including chip with complementary I/O cellsKINOSHITA MITSUYA·Filed 2011·Granted Nov 12, 2013·3 cites·6 claims
- 1863US5323348ASemiconductor memory device having multiple memory arrays and including redundancy circuit for repairing a faulty bitMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 21, 1994·23 cites·9 claims
- 1960US5578861ASemiconductor device having redundant circuitMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 26, 1996·27 cites·9 claims
- 2058US6854078B2Multi-bit test circuitRENESAS TECH CORP·Filed 2001·Granted Feb 8, 2005·10 cites·9 claims
- 2158US6845056B2Semiconductor memory device with reduced power consumptionRENESAS TECH CORP·Filed 2002·Granted Jan 18, 2005·10 cites·7 claims
- 2256US6097052ASemiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 1, 2000·19 cites·22 claims
- 2353US6704231B1Semiconductor memory device with circuit executing burn-in testingRENESAS TECH CORP·Filed 2003·Granted Mar 9, 2004·7 cites·9 claims
- 2451US5408114ASemiconductor memory device having cylindrical capacitor and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 18, 1995·12 cites·1 claims
- 2549US5279984AMethod for producing a semiconductor integrated circuit device in which circuit functions can be remedied or changedMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 18, 1994·14 cites·2 claims
- 2645US6930950B2Semiconductor memory device having self-precharge functionRENESAS TECH CORP·Filed 2003·Granted Aug 16, 2005·4 cites·9 claims
- 2745US5892702ASemiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 6, 1999·8 cites·5 claims
- 2844US6337506B2Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip areaMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 8, 2002·11 cites·14 claims
- 2942US5223735ASemiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 29, 1993·10 cites·7 claims
- 3041US5506164AMethod of manufacturing a semiconductor device having a cylindrical capacitorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 9, 1996·5 cites·6 claims
- 3132US5321654ASemiconductor device having no through current flow in standby periodMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 14, 1994·3 cites·17 claims
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