Inventor · disambiguated record
Bikas Maiti
Also filed as: MAITI BIKAS
23 granted patents·3 pending applications·1,644 citations·filing 1995–2021
96Inventor score
Files withADVANCED RISC MACH LTD10MOTOROLA INC10FREESCALE SEMICONDUCTOR INC2MAITI BIKAS1RANA MANMOHAN1
Top patents by PatentIndex Score
26 records- 0197US6171910B1Method for forming a semiconductor deviceMOTOROLA INC·Filed 1999·Granted Jan 9, 2001·271 cites·16 claims
- 0297US6027961ACMOS semiconductor devices and method of formationMOTOROLA INC·Filed 1998·Granted Feb 22, 2000·358 cites·17 claims
- 0397US6020024AMethod for forming high dielectric constant metal oxidesMOTOROLA INC·Filed 1997·Granted Feb 1, 2000·461 cites·26 claims
- 0496US5861347AMethod for forming a high voltage gate dielectric for use in integrated circuitMOTOROLA INC·Filed 1997·Granted Jan 19, 1999·188 cites·32 claims
- 0590US5885870AMethod for forming a semiconductor device having a nitrided oxide dielectric layerMOTOROLA INC·Filed 1997·Granted Mar 23, 1999·120 cites·16 claims
- 0689US6049114ASemiconductor device having a metal containing layer overlying a gate dielectricMOTOROLA INC·Filed 1998·Granted Apr 11, 2000·105 cites·19 claims
- 0785US11475944B2Read assist circuitry for memory applicationsADVANCED RISC MACH LTD·Filed 2020·Granted Oct 18, 2022·2 cites·19 claims
- 0881US6376349B1Process for forming a semiconductor device and a conductive structureMOTOROLA INC·Filed 2000·Granted Apr 23, 2002·29 cites·15 claims
- 0975US10008260B1Clock generation circuitry for memory applicationsADVANCED RISC MACH LTD·Filed 2017·Granted Jun 26, 2018·4 cites·20 claims
- 1075US9997217B1Write assist circuitryADVANCED RISC MACH LTD·Filed 2017·Granted Jun 12, 2018·4 cites·20 claims
- 1174US10854280B2Read assist circuitry for memory applicationsADVANCED RISC MACH LTD·Filed 2017·Granted Dec 1, 2020·4 cites·19 claims
- 1271US6255204B1Method for forming a semiconductor deviceMOTOROLA INC·Filed 1999·Granted Jul 3, 2001·31 cites·19 claims
- 1366US5830802AProcess for reducing halogen concentration in a material layer during semiconductor device fabricationMOTOROLA INC·Filed 1995·Granted Nov 3, 1998·32 cites·17 claims
- 1464US6084279ASemiconductor device having a metal containing layer overlying a gate dielectricMOTOROLA INC·Filed 1997·Granted Jul 4, 2000·31 cites·21 claims
- 1559US10839934B2Redundancy circuitry for memory applicationADVANCED RISC MACH LTD·Filed 2018·Granted Nov 17, 2020·1 cites·21 claims
- 1652US11664086B2Column redundancy techniquesADVANCED RISC MACH LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 1752US11501809B1Contention-adapted read-write pulse generation circuitryADVANCED RISC MACH LTD·Filed 2021·Granted Nov 15, 2022·0 cites·20 claims
- 1852US9064559B2Memory device and method of performing access operations within such a memory deviceADVANCED RISC MACH LTD·Filed 2013·Granted Jun 23, 2015·1 cites·13 claims
- 1949US8611172B2Controlling a voltage level of an access signal to reduce access disturbs in semiconductor memoriesSHYANMUGAM AMARNATH·Filed 2012·Granted Dec 17, 2013·2 cites·20 claims
- 2040US11967365B2Bitcell architecture with time-multiplexed portsADVANCED RISC MACH LTD·Filed 2020·Granted Apr 23, 2024·0 cites·20 claims
- 2136US11005461B2Level shift latch circuitryADVANCED RISC MACH LTD·Filed 2018·Granted May 11, 2021·0 cites·8 claims
- 2235US2005095763A1Method of forming an NMOS transistor and structure thereofFiled 2003·Application pending·0 cites
- 2331US2011128807A1Memory device and sense circuitry thereforFREESCALE SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 2431US2011211382A1High density and low variability read only memoryFREESCALE SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 2528US8116153B2Read only memory and method of reading sameRANA MANMOHAN·Filed 2010·Granted Feb 14, 2012·0 cites·19 claims
- 2624US8264896B2Integrated circuit having an array supply voltage control circuitMAITI BIKAS·Filed 2008·Granted Sep 11, 2012·0 cites·19 claims
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