Inventor · disambiguated record
Young-Man Jang
Also filed as: JANG YOUNG-MAN
17 granted patents·6 pending applications·107 citations·filing 2009–2021
92Inventor score
Top patents by PatentIndex Score
23 records- 0196US11706998B2Magnetic tunnel junction and magnetic memory device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·19 claims
- 0296US11088319B2Magnetic tunnel junction including a free layer structure and magnetic memory device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 10, 2021·6 cites·20 claims
- 0395US8411498B2Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the sameKIM KWANG-SEOK·Filed 2010·Granted Apr 2, 2013·53 cites·24 claims
- 0494US9508925B2Magnetic memory devicePI UNG-HWAN·Filed 2015·Granted Nov 29, 2016·11 cites·19 claims
- 0588US9837468B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 5, 2017·5 cites·20 claims
- 0687US9230623B2Magnetic memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·6 cites·33 claims
- 0785US9236105B2Magnetic memory devices and methods of writing data to the samePI UNG-HWAN·Filed 2014·Granted Jan 12, 2016·9 cites·24 claims
- 0884US8729647B2Thermally stable magnetic tunnel junction cell and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted May 20, 2014·7 cites·20 claims
- 0977US10640865B2Substrate processing apparatus and method for manufacturing semiconductor device using the sameLEE JOON MYOUNG·Filed 2017·Granted May 5, 2020·1 cites·9 claims
- 1075US9530478B2Memory device using spin hall effect and methods of manufacturing and operating the memory devicePI UNG-HWAN·Filed 2014·Granted Dec 27, 2016·5 cites·10 claims
- 1170US10128433B2Magnetic memory devicePI UNG HWAN·Filed 2016·Granted Nov 13, 2018·1 cites·18 claims
- 1268US11293091B2Substrate processing apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·8 claims
- 1363US9437654B2Magnetic memory devicesLEE SUNG-CHUL·Filed 2015·Granted Sep 6, 2016·1 cites·18 claims
- 1453US10096650B2Method of manufacturing magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·0 cites·6 claims
- 1549US2013140657A1Magnetic memory devices including free magnetic layer having three-dimensional structureLEE SUNG-CHUL·Filed 2012·Application pending·0 cites
- 1642US9570675B2Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structureKIM KEE-WON·Filed 2014·Granted Feb 14, 2017·0 cites·17 claims
- 1741US8848432B2Magnetoresistive elements and memory devices including the sameLEE SUNG-CHUL·Filed 2012·Granted Sep 30, 2014·0 cites·24 claims
- 1840US8836057B2Magnetoresistive elements having protrusion from free layer and memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Sep 16, 2014·0 cites·26 claims
- 1940US2012017672A1Tire pressure monitoring system and tire pressure sensor thereofUH SUNG-SUN·Filed 2009·Application pending·0 cites
- 2038US2014231941A1Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devicesLEE SUNG-CHUL·Filed 2014·Application pending·0 cites
- 2138US2014339660A1Magnetoresistive element and memory device including the sameLEE SUNG-CHUL·Filed 2014·Application pending·0 cites
- 2237US2014119106A1Magnetic memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2336US2019097124A1Magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
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