Inventor · disambiguated record
Se-Chung Oh
Also filed as: OH SE-CHUNG
54 granted patents·16 pending applications·353 citations·filing 2004–2024
98Inventor score
Top patents by PatentIndex Score
70 records- 0197US7495984B2Resistive memory devices including selected reference memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·54 cites·15 claims
- 0296US7952914B2Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 31, 2011·45 cites·27 claims
- 0395US9773972B1Magnetic deviceKIM KI-WOONG·Filed 2017·Granted Sep 26, 2017·18 cites·20 claims
- 0491US7672155B2Resistive memory devices including selected reference memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·23 cites·4 claims
- 0590US11600662B2Data storage devices including a first top electrode and a different second top electrode thereonSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 7, 2023·1 cites·20 claims
- 0690US8174875B2Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methodsBAEK IN-GYU·Filed 2011·Granted May 8, 2012·12 cites·13 claims
- 0789US8796042B2Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the sameSHIN HEE-JU·Filed 2011·Granted Aug 5, 2014·18 cites·17 claims
- 0889US7378698B2Magnetic tunnel junction and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·51 cites·8 claims
- 0988US11683992B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 20, 2023·2 cites·18 claims
- 1087US7871866B2Method of manufacturing semiconductor device having transition metal oxide layer and related deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·10 cites·27 claims
- 1184US9065039B2Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the samePARK JEONG HEON·Filed 2014·Granted Jun 23, 2015·5 cites·6 claims
- 1283US8345467B2Resistive memory devices including selected reference memory cells operating responsive to read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·6 cites·7 claims
- 1383US8083962B2Method for forming minute pattern and method for forming semiconductor memory device using the sameLEE JANG-EUN·Filed 2007·Granted Dec 27, 2011·11 cites·33 claims
- 1482US8288289B2Method of fabricating semiconductor deviceJEONG JUN-HO·Filed 2011·Granted Oct 16, 2012·8 cites·20 claims
- 1580US9899594B2Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 20, 2018·3 cites·18 claims
- 1679US8804410B2Stacked MRAM device and memory system having the sameOH HYUNG-ROK·Filed 2012·Granted Aug 12, 2014·5 cites·18 claims
- 1778US7750336B2Resistive memory devices and methods of forming resistive memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 6, 2010·6 cites·9 claims
- 1877US10640865B2Substrate processing apparatus and method for manufacturing semiconductor device using the sameLEE JOON MYOUNG·Filed 2017·Granted May 5, 2020·1 cites·9 claims
- 1977US8023311B2Resistive memory devices including selected reference memory cells operating responsive to read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·7 cites·8 claims
- 2076US8614125B2Nonvolatile memory devices and methods of forming the sameYIM EUN-KYUNG·Filed 2008·Granted Dec 24, 2013·6 cites·5 claims
- 2176US7218556B2Method of writing to MRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 15, 2007·10 cites·20 claims
- 2275US11725271B2Sputtering apparatus and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·10 claims
- 2374US7612969B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 3, 2009·6 cites·1 claims
- 2473US10714678B2Magnetoresistive random access memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·2 cites·8 claims
- 2573US8035145B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 11, 2011·2 cites·19 claims
- 2673US7645619B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 12, 2010·5 cites·19 claims
- 2773US7141438B2Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·17 cites·16 claims
- 2870US9087977B2Semiconductor device having pinned layer with enhanced thermal endurancePARK JEONG-HEON·Filed 2014·Granted Jul 21, 2015·2 cites·20 claims
- 2970US7701748B2Nonvolatile memory devices using variable resistors as storage elements and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·7 cites·25 claims
- 3070US7582890B2Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·34 claims
- 3169US10672978B2Method of manufacturing a variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·1 cites·18 claims
- 3268US11339467B2Sputtering apparatus and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 3368US11293091B2Substrate processing apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·8 claims
- 3467US10686122B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·19 claims
- 3564US11271037B2Data storage devices including a first top electrode and a different second top electrode thereonSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 8, 2022·0 cites·23 claims
- 3664US8772887B2Magnetic deviceLIM WOO-CHANG·Filed 2012·Granted Jul 8, 2014·1 cites·17 claims
- 3763US2025017118A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3862US7372090B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 13, 2008·2 cites·12 claims
- 3959US11706931B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·19 claims
- 4059US8697484B2Method and system for setting a pinned layer in a magnetic tunneling junctionAPALKOV DMYTRO·Filed 2011·Granted Apr 15, 2014·2 cites·8 claims
- 4158US10559746B2Magnetoresistive random access memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·0 cites·20 claims
- 4257US10249817B2Magnetic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 2, 2019·0 cites·19 claims
- 4357US2024423097A1Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4454US11735241B2Magnetic memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 4554US9356228B2Magnetic tunneling junction devices, memories, memory systems, and electronic devicesPARK JEONG HEON·Filed 2015·Granted May 31, 2016·0 cites·15 claims
- 4652US9159914B2Nonvolatile memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 13, 2015·0 cites·16 claims
- 4752US2019136368A1Sputtering apparatus and method of manufacturing magnetic memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 4850US12262641B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 25, 2025·0 cites·15 claims
- 4950US9666789B2Semiconductor device having pinned layer with enhanced thermal enduranceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 30, 2017·0 cites·17 claims
- 5050US2024284802A1Magnetic memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 70 patent records by PatentIndex Score.
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