Inventor · disambiguated record
Whan-Kyun Kim
Also filed as: KIM WHAN-KYUN
11 granted patents·2 pending applications·9 citations·filing 2012–2021
82Inventor score
Top patents by PatentIndex Score
13 records- 0188US9837468B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 5, 2017·5 cites·20 claims
- 0277US10640865B2Substrate processing apparatus and method for manufacturing semiconductor device using the sameLEE JOON MYOUNG·Filed 2017·Granted May 5, 2020·1 cites·9 claims
- 0372US11665970B2Magnetoresistive random access memory (MRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 0471US11031549B2Magnetoresistive random access memory (MRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 0571US10784442B2Method of manufacturing a magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·18 claims
- 0668US11293091B2Substrate processing apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·8 claims
- 0762US9224784B2Non-volatile memory devices and methods of fabricating the sameKIM WHAN-KYUN·Filed 2014·Granted Dec 29, 2015·2 cites·21 claims
- 0853US10096650B2Method of manufacturing magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·0 cites·6 claims
- 0952US10847713B2Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 24, 2020·0 cites·19 claims
- 1045US2020176511A1Semiconductor device including spin-orbit torque lineSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 1141US9224787B2Method for fabricating nonvolatile memory deviceKIM WHAN-KYUN·Filed 2014·Granted Dec 29, 2015·0 cites·10 claims
- 1237US9576916B2High frequency circuit comprising graphene and method of operating the sameSHIN HYEON-JIN·Filed 2012·Granted Feb 21, 2017·0 cites·11 claims
- 1334US2013176698A1High frequency circuit comprising graphene and method of operating the sameSHIN HYEON-JIN·Filed 2012·Application pending·0 cites
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