Inventor · disambiguated record
Brian D. Schultz
Also filed as: SCHULTZ BRIAN D · SCHULTZ BRIAN DOUGLAS
15 granted patents·1 pending application·57 citations·filing 2008–2025
90Inventor score
Files withRAYTHEON CO12HOOKE WILLIAM MCCLURE1INT TECH CENTER1INTERNAT TECHNOLOGY CT1SCHULTZ BRIAN D1
Top patents by PatentIndex Score
16 records- 0195US9419125B1Doped barrier layers in epitaxial group III nitridesRAYTHEON CO·Filed 2015·Granted Aug 16, 2016·24 cites·22 claims
- 0293US9960262B2Group III—nitride double-heterojunction field effect transistorRAYTHEON CO·Filed 2016·Granted May 1, 2018·9 cites·32 claims
- 0385US11362190B2Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layersRAYTHEON CO·Filed 2020·Granted Jun 14, 2022·2 cites·10 claims
- 0485US11101378B2Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistorsRAYTHEON CO·Filed 2019·Granted Aug 24, 2021·4 cites·14 claims
- 0583US10276705B2Group III—nitride double-heterojunction field effect transistorRAYTHEON CO·Filed 2018·Granted Apr 30, 2019·3 cites·11 claims
- 0677US8084947B2Pulsed dielectric barrier dischargeHOOKE WILLIAM MCCLURE·Filed 2009·Granted Dec 27, 2011·6 cites·27 claims
- 0773US11127596B2Semiconductor material growth of a high resistivity nitride buffer layer using ion implantationRAYTHEON CO·Filed 2017·Granted Sep 21, 2021·2 cites·18 claims
- 0873US2025211187A1Epitaxial growth of aluminum on aluminum-nitride compoundsRAYTHEON CO·Filed 2025·Application pending·0 cites
- 0969US9414478B2Self-tuned dielectric barrier dischargeINT TECH CENTER·Filed 2013·Granted Aug 9, 2016·4 cites·28 claims
- 1068US7960259B2Semiconductor structure with coincident lattice interlayerINTERNAT TECHNOLOGY CT·Filed 2008·Granted Jun 14, 2011·2 cites·20 claims
- 1165US11594627B2Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistorsRAYTHEON CO·Filed 2021·Granted Feb 28, 2023·0 cites·6 claims
- 1264US12301195B2Epitaxial growth of aluminum on aluminum-nitride compoundsRAYTHEON CO·Filed 2021·Granted May 13, 2025·0 cites·12 claims
- 1359US8263976B2Semiconductor structure with coincident lattice interlayerSCHULTZ BRIAN D·Filed 2011·Granted Sep 11, 2012·1 cites·22 claims
- 1454US11942919B2Strain compensated rare earth group III-nitride heterostructuresRAYTHEON CO·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 1549US11545566B2Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancementRAYTHEON CO·Filed 2019·Granted Jan 3, 2023·0 cites·10 claims
- 1640US10622447B2Group III-nitride structure having successively reduced crystallographic dislocation density regionsRAYTHEON CO·Filed 2017·Granted Apr 14, 2020·0 cites·24 claims
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