Inventor · disambiguated record
Kiuchul Hwang
Also filed as: HWANG KIUCHUL
12 granted patents·9 pending applications·45 citations·filing 2004–2021
87Inventor score
Top patents by PatentIndex Score
21 records- 0185US11362190B2Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layersRAYTHEON CO·Filed 2020·Granted Jun 14, 2022·2 cites·10 claims
- 0285US11101378B2Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistorsRAYTHEON CO·Filed 2019·Granted Aug 24, 2021·4 cites·14 claims
- 0382US7361536B2Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistorRAYTHEON CO·Filed 2005·Granted Apr 22, 2008·10 cites·7 claims
- 0476US7626218B2Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistorsRAYTHEON CO·Filed 2005·Granted Dec 1, 2009·7 cites·11 claims
- 0574US7183592B2Field effect transistorRAYTHEON CO·Filed 2004·Granted Feb 27, 2007·19 cites·10 claims
- 0673US11127596B2Semiconductor material growth of a high resistivity nitride buffer layer using ion implantationRAYTHEON CO·Filed 2017·Granted Sep 21, 2021·2 cites·18 claims
- 0765US11594627B2Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistorsRAYTHEON CO·Filed 2021·Granted Feb 28, 2023·0 cites·6 claims
- 0864US9887089B2Semiconductor structures having T-shaped electrodesRAYTHEON CO·Filed 2016·Granted Feb 6, 2018·1 cites·7 claims
- 0952US10797129B2Field effect transistor structure having notched mesaRAYTHEON CO·Filed 2018·Granted Oct 6, 2020·0 cites·16 claims
- 1051US10541148B2Method for controlling the amount of radiation having a predetermined wavelength to be absorbed by a structure disposed on a semiconductorRAYTHEON CO·Filed 2018·Granted Jan 21, 2020·0 cites·12 claims
- 1147US2010244105A1Transistors having temperature stable schottky contact metalsHWANG KIUCHUL·Filed 2009·Application pending·0 cites
- 1246US2015235856A1Semiconductor structures having t-shaped electrodesRAYTHEON CO·Filed 2014·Application pending·0 cites
- 1345US7498223B2Semiconductor devices having improved field platesRAYTHEON CO·Filed 2007·Granted Mar 3, 2009·0 cites·1 claims
- 1444US10134839B2Field effect transistor structure having notched mesaRAYTHEON CO·Filed 2015·Granted Nov 20, 2018·0 cites·19 claims
- 1544US2012273852A1Transistors having temperature stable schottky contact metalsHWANG KIUCHUL·Filed 2012·Application pending·0 cites
- 1643US2011053336A1Method for selective deposition of dielectric layers on semiconductor structuresRAYTHEON CO·Filed 2009·Application pending·0 cites
- 1743US2021320045A1Thermal management structures for nitride-based heat generating semiconductor devicesRAYTHEON CO·Filed 2020·Application pending·0 cites
- 1841US2006223293A1Semiconductor devices having improved field platesRAYTHEON CO·Filed 2005·Application pending·0 cites
- 1937US2006175631A1Monolithic integrated circuit having enhanced breakdown voltageRAYTHEON CO·Filed 2005·Application pending·0 cites
- 2034US2005258459A1Method for fabricating semiconductor devices having a substrate which includes group III-nitride materialHWANG KIUCHUL·Filed 2004·Application pending·0 cites
- 2132US2018019298A1METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERSRAYTHEON CO·Filed 2016·Application pending·0 cites
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