Inventor · disambiguated record
Kanta Saino
Also filed as: SAINO KANTA
14 granted patents·8 pending applications·30 citations·filing 1999–2019
89Inventor score
Top patents by PatentIndex Score
22 records- 0178US9601384B2Method of forming a semiconductor device comprising first and second nitride layersMICRON TECHNOLOGY INC·Filed 2015·Granted Mar 21, 2017·2 cites·20 claims
- 0276US9461053B2Semiconductor devicePS4 LUXCO SARL·Filed 2014·Granted Oct 4, 2016·4 cites·14 claims
- 0372US9263456B2Semiconductor device and method for manufacturing the sameSAINO KANTA·Filed 2012·Granted Feb 16, 2016·3 cites·8 claims
- 0466US9178017B2Semiconductor device and method for manufacturing sameMICRON TECHNOLOGY INC·Filed 2014·Granted Nov 3, 2015·1 cites·10 claims
- 0562US10886214B2Semiconductor device and method for manufacturing sameMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 5, 2021·0 cites·7 claims
- 0661US9153567B2Semiconductor devicePS4 LUXCO SARL·Filed 2013·Granted Oct 6, 2015·1 cites·20 claims
- 0759US10410964B2Methods of forming a semiconductor device comprising first and second nitride layersMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 10, 2019·0 cites·8 claims
- 0859US7413968B2Method of manufacturing semiconductor device having gate electrodes of polymetal gate and dual-gate structureELPIDA MEMORY INC·Filed 2006·Granted Aug 19, 2008·2 cites·19 claims
- 0958US8735230B2Method for manufacturing a semiconductor device including an impurity-doped silicon filmSAINO KANTA·Filed 2007·Granted May 27, 2014·2 cites·9 claims
- 1056US10074603B2Methods of forming a semiconductor device comprising first and second nitride layersMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 11, 2018·0 cites·9 claims
- 1152US2015064895A1Method of forming a semiconductor devicePS4 LUXCO SARL·Filed 2014·Application pending·0 cites
- 1248US2013105908A1Semiconductor deviceELPIDA MEMORY INC·Filed 2012·Application pending·0 cites
- 1347US6830991B2Method of manufacturing a semiconductor device including a gettering operationNEC CORP·Filed 2002·Granted Dec 14, 2004·2 cites·6 claims
- 1446US2015372106A1Semiconductor devicePS4 LUXCO SARL·Filed 2015·Application pending·0 cites
- 1544US6861319B2Gate electrode and method of fabricating the sameELPIDA MEMORY INC·Filed 2003·Granted Mar 1, 2005·2 cites·7 claims
- 1643US7772099B2Method for manufacturing a semiconductor device having a doped silicon filmELPIDA MEMORY INC·Filed 2007·Granted Aug 10, 2010·0 cites·5 claims
- 1743US6181018B1Semiconductor deviceNEC CORP·Filed 1999·Granted Jan 30, 2001·11 cites·5 claims
- 1842US2007170427A1Semiconductor deviceELPIDA MEMORY INC·Filed 2007·Application pending·0 cites
- 1935US2013049091A1Semiconductor deviceSAINO KANTA·Filed 2012·Application pending·0 cites
- 2035US2004171241A1Semiconductor device having gate electrode of polymetal gate structure processed by side nitriding in anmonia atmosphereFiled 2004·Application pending·0 cites
- 2135US2016027778A1Semiconductor deviceMORIWAKI YOSHIKAZU·Filed 2014·Application pending·0 cites
- 2234US2015333070A1Semiconductor device manufacturing methodSAINO KANTA·Filed 2013·Application pending·0 cites
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